ESH3B_09 VISHAY
Document overview
- Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
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Technical content
Document Number: 84648 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 21-Jul-09 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 1 Surface Mount Ultrafast Plastic Rectifier ESH3B, ESH3C & ESH3D Vishay General Semiconductor New Product
FEATURES
- Glass passivated chip junction Ideal for automated placement Ultrafast recovery ti mes for high efficiency Low forward voltage, low power loss High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Find out more about Vishay’s Automotive Grade Product requirements at: www.vishay.com/applications TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converter and inverter for both consumer and automotive. MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 100 V, 150 V, 200 V trr 25 ns VF 0.90 V TJ max. 175 °C DO-214AB (SMC) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL ESH3B ESH3C ESH3D UNIT Device marking code EHB EHC EHD Maximum repetitive peak reverse voltage V RMM 100 150 200 V Maximum RMS voltage V RMS 70 105 140 V Maximum DC blocking voltage V DC 100 150 200 V Maximum average forward rectified current (fig. 1) I F(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 125 A Operating junction and storage temperature range T J, TSTG - 55 to + 175 °C
www.vishay.com For technical questions wi thin your region, please contact one of the following: Document Number: 84648 2 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Revision: 21-Jul-09 ESH3B, ESH3C & ESH3D Vishay General Semiconductor New Product Note (1) Pulse test: 300 µs pulse width, 1 % duty cycle Note Note (1) Automotive grade RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Maximum instantaneous forward voltage (1) IF = 3 A V F 0.90 V Maximum DC reverse current at rated DC blocking voltage TA = 25 °C TA = 125 °C IR 5.0 150 µA Maximum reverse recovery time I F = 0.5 A, IR = 1 A, Irr = 0.25 A t rr 25 ns Typical reverse recovery time IF = 3 A, VR = 30 V, dI/dt = 50 A/µs, Irr = 10 % IRM TJ = 25 °C TJ = 100 °C trr 55 ns Typical stored charge IF = 3 A, VR = 30 V, dI/dt = 50 A/µs, Irr = 10 % IRM TJ = 25 °C TJ = 100 °C Qrr 60 nC Typical junction capacitance 4.0 V, 1 MHz C J 70 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL ESH3B ESH3C ESH3D UNIT Typical thermal resistance (1) RθJA RθJL 15 °C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE ESH3D-E3/57T 0.211 57T 850 7" diameter plastic tape and reel ESH3D-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel ESH3DHE3/57T (1) 0.211 57T 850 7" diameter plastic tape and reel ESH3DHE3/9AT (1) 0.211 9AT 3500 13" diameter plastic tape and reel Lead Temperature (°C) Average For ward Rectified C urrent (A) 0 25 50 75 100 125 150 175 3.5 3.0 2.5 2.0 1.5 1.0 0.5 Peak For ward S urge C urrent (A) Number of Cycles at 60 Hz 125 100 1 10 100
Document Number: 84648 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 21-Jul-09 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 3 ESH3B, ESH3C & ESH3D Vishay General Semiconductor New Product Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Leakage Characteristics Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 100 0.1 0.01 Instantaneous Forward Voltage (V) TJ = 150 °C TJ = 125 °C TJ = 175 °C TJ = 25 °C Instantaneous Forward Current (A) 02 0 4 0 6 0 80 100 Percent of Rated Peak Reverse Voltage (%) 1000 100 0.1 0.01 TJ = 150 °C TJ = 125 °C TJ = 175 °C TJ = 25 °C Instantaneo us Re verse Leakage Current ( µA) Reverse Voltage (V) Junction Capacitance (pF) 0.1 1 10 100 1000 100 100 0.01 0.1 1 10 100 Transient Thermal Impedance (°C/ W t - Pulse Duration (s) Cathode Band DO-214AB (SMC) 0.126 (3.20) 0.114 (2.90) 0.246 (6.22) 0.220 (5.59) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) 0.060 (1.52) 0.030 (0.76) 0.103 (2.62) 0.079 (2.06) Mounting Pad Layout 0.126 (3.20) MIN. 0.060 (1.52) MIN. 0.185 (4.69) MAX. 0.320 REF.
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