ES3A LEIDITECH
Document overview
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Technical content
Features
Ideal for automated placement Glass passivated chip junctions Ultrafast reverse recovery time Low switching losses, high efficiency High forward surge capability High temperature soldering： 260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/1 and WEEE 2002/96/EC Major Ratings and Characteristics Mechanical Date Case: JEDEC DO-214AB molded plastic body over glass passivated chip Terminals: Solder plated, solderable per JESD22-B102D Polarit y : Laser band denotes cathode end t rr 50 nS , 75 nS V F 1.0 V , 1.3 V , 1.7 V T j max. 150 °C I F(AV) 3.0 A V RRM
50 V to 1000 V
I FSM 100 A y Maximum Ratings & Thermal Characteristics A = 25 °C unless otherwise noted)
Electrical Characteristics
A = 25 °C unless otherwise noted) Note 2: Pulse test:300μs pulse width,1% duty cycle. Maximum average forward rectified current I F(AV) 3.0 A Operating junction and storage temperature range T J , T STG –55 to +150 ℃ Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I FSM 100 A Thermal resistance from junction to lead (1) R θJL 20 ℃/ W V50 100 200 400 Maximum repetitive peak reverse voltage V RRM 50 100 Items Symbol ES3A ES3B ES3D ES3G Maximum DC blocking voltage V DC 600 Maximum RMS voltage V RMS 35 70 140 280 600 j Symbol ES3A~ES3D ES3G ES3J~US3M ES3J ES3K ES3M UNIT 420 560 700 V 200 400 800 1000 V 800 1000 Reverse current V R DC T j =25℃ I R μAT j =125℃ 50 UNIT Instantaneous forward voltage I F =3.0 A (2) V F 1.0 1.3 1.7 V Items Test conditions Typical junction capacitance 4.0 V ,1MHz C J 30 pF Reverse recovery time I F = 0.5 A , I R = 1.0 A , I rr = 0.25 A t rr 50 75 nS High Efficiency Recovery rectifiers Rev : www.leiditech.com 01.06.2015 1/3
A =25 ℃ unless otherwise noted) Rev : www.leiditech.com 01.06.2015 2/3 ES3A~ES3M
Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2015 3/3 ES3A~ES3M