ES1D-N LEIDITECH
Document overview
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- PDF pages: 3
Technical content
Features
Glass passivated chip junctions Ideal for automated placement Ultrafast reverse recovery time for high efficiency Low profile package High forward surge capability High temperature soldering： 260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/1 and WEEE 2002/96/EC Major Ratings and Characteristics Mechanical Date Case: JEDEC DO-214AC molded plastic body over glass passivated chip Terminals: Solder plated, solderable per J-STD-002B and JESD22-B102D Polarit y : Laser band denotes cathode end t rr 35 nS V F 0.95 V, 1.25 V, 1.7 V T j max. 150 °C I F(AV) 1.0 A V RRM
50 V to 600 V
I FSM 30 A y Maximum Ratings & Thermal Characteristics A = 25 °C unless otherwise noted)
Electrical Characteristics
A = 25 °C unless otherwise noted) Note 2: Pulse test:300μs pulse width,1% duty cycle. Reverse recovery time I F =0.5A I R =1A I rr =0.25A t rr 35 nS Typical junction capacitance 4.0 V ,1MHz C J 15 pF Maximum reverse current V R DC T j =25℃ I R μA T j =125℃ 50 UNIT Maximum Instantaneous forward voltage I F =1A (2) V F Items Operating junction and storage temperature range T J , T STG –55 to +150 ℃ Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I FSM 30 A Thermal resistance from junction to lead (1) R θJL 35 ℃/ W Maximum average forward rectified current I F(AV) Maximum DC blocking voltage V DC Maximum RMS voltage V RMS Maximum repetitive peak reverse voltage V RRM j Supre Fast recovery rectifiers Rev : www.leiditech.com 01.06.2018 1/3 ES1D-n Items Symbol 200 UNIT V V V 140 200 Test conditions Symbol 0.95 V ES1D-n ES1D-n
A =25 ℃ unless otherwise noted) Rev : www.leiditech.com 01.06.2018 2/3 ES1D-n ES1D-n
Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018 3/3 ES1D-n