ERD09-13 DSK
Document overview
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Technical content
FEATURES
Case:JEDEC DO-27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces,1.15 grams Mounting position: Any MA XIMUM RA TINGS A ND ELECTRICA L CHA RA CTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ERD09 -15 UNITS Maximum recurrent peak reverse voltage V RRM 1500 V Max imum RMS v oltage V RMS 1050 V Maximum DC blocking voltage V DC 1500 V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage at 3.0 A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 M axim um reverse recovery tim e (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG NOTE:1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. I FSM A -55----+150 -55----+150 I R 70.0 10.0 200.0 1.5 A 1300 ERD09-13---ERD09-15 910 1300 DO - 27 Easily cleaned with Freon,Alcohol,Isopropanol ERD09 -13 600 VOLTAGE RANGE: 1300 --- 1500 V CURRENT: 3.0 A 3.0 A FAST RECOVERY RECTIFIERS I F(AV) The plastic material carries U/L recognition 94V-0 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
T J =25 Pulse Width=300 µ S 0.04 0.8 0.6 0.01 0.02 1.0 1.2 1.4 0.06 0.1 0.2 0.4 1.0 100 1.6 1.8 2.0 T J =125 8.3ms Single Half Sine-Wave 2 4 10 8 10040 60 80 0.5 1.5 1.0 2.0 2.5 3.0 3.5 40 60 80 100 120 140 Single Phase Half Wave 60Hz Resistive or Inductive Load PULSE GENERATOR (NOTE2) D.U.T. N.1. N.1. OSCILLOSCOPE (NOTE 1) (+) 50VDC (APPROX) (-) N.1. (-) (+) -1.0A -0.25A +0.5A t rr 1cm AMPERES AMPERES AMPERES JUNCTION CAPACITANCE,pF INST ANT ANEOUS FORWARD VOLT AGE,VOLT S REVERSE VOLT AGE,VOLT S PEAK FORWARD SURGE CURRENT INSTANTANEOUS FORWARD CURRENT ERD09-13---ERD09-15 SET TIM E BASE FOR 50/100 ns /cm AMBIENT TEMPERATURE, NUMBER OF CYCLES AT 60 Hz N OTE S:1.R ISE TIM E =7ns M AX. IN P U T IM P E D AN C E =1M .22pF FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM FIG.2 --FORWARD DERATING CURVE FIG.4--TYPICAL FORWARD CHARACTERISTIC FIG.5--TYPCAL JUNCTION CAPACITANCE 2. RISE TIME=10ns MAX. SOURCE IMPEDANCE=5O AVERAGE FORWARD CURRENT FIG.3 --PEAK FORWARD SURGE CURRENT T J =25 f=1MHz .4 1.0 2 100 4 10 20 40 100 www.diode.kr Diode Semiconductor Korea