EPB018A5 ETC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
/G36 /G36 /G27 /G2A /G0B/G24/G4F/G4F /G2F/G48/G44/G47/G56/G0C /G17/G13 /G15/G13 /G17/G17 /G14/G1C /G17 /G1A/G13 /G14/G1B/G13 /G30/G4C/G51/G11 Excelics EPB018A5/A7/A9-70 DATA SHEET Super Low Noise High Gain Heterojunction FET
- NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE
- TYPICAL 0.50~0.90dB NOISE FIGURE AND 11.5~13.0dB ASSOCIATED GAIN AT 12 GHz
- 0.3 X 180 MICRON RECESSED “ MUSHR OOM” GATE
- Si3N 4 PASSIVATION
- ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH RELIABILITY ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT EPB018A5-70 0.50 0.60 EPB018A7-70 0.65 0.80 NF Noise Figure, f=12GHz Vds=2V, Ids=15mA EPB018A9-70 0.95 1.20 dB EPB018A5-70 11.5 13.0 EPB018A7-70 11.0 12.5 Ga Associated Gain, f=12GHz Vds=2V, Ids=15mA EPB018A9-70 10.5 11.5 dB P1dB Output Power at 1dB Compression f=12GHz Vds=3V, Ids=25mA f=18GHz 15.0 15.0 dBm G 1dB Gain at 1dB Compression f=12GHz Vds=3V, Ids=25mA f=18GHz 14.0 11.5 dB Idss Saturated Drain Current Vds=2V, Vgs=0V 15 45 80 mA Gm Transconductance Vds=2V, Vgs=0V 50 90 mS Vp Pinch-off Voltage Vds=2V, Ids=1.0mA -0.8 -2.5 V BVgd Drain Breakdown Voltage Igd=10uA -3 -6 V BVgs Source Breakdown Voltage Igs=10uA -3 -6 V Rth Thermal Resistance 480 * oC/W *Overall Rth depands on case mounting. MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 5V 4V Vgs Gate-Source Voltage -3V -2V Ids Drain Current Idss 60mA Igsf Forward Gate Current 2mA 0.3mA Pin Input Power 12dBm @1dB Compression Tch Channel Temperature 175oC 150oC Tstg Storage Temperature -65/175oC -65/150oC Pt Total Power Dissipation 285mW 240mW Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com All Dimensions In mils.
Super Low Noise High Gain Heterojunction FET E PB 018A5-70 S-PARA M ETERS 2V, 15m A (GH z) M A G A NG M A G A NG M A G A NG M A G A NG EPB018A7-70 Noise Parameters Vds=2V, Ids=15m A Freq. Gamm a Opt N fm in (G Hz) (M AG ) (AN G ) (dB) R n/50 2 0.7 6 25 0.37 0.26 4 0.6 5 56 0.43 0.22 6 0.5 1 84 0.48 0.16 8 0.4 1 118 0.55 0.11 10 0.2 6 159 0.61 0.08 12 0.2 6 -144 0.68 0.08 14 0.3 2 -82 0.89 0.18 16 0.4 0 -46 1.10 0.29 18 0.4 0 -26 1.30 0.45 20 0.5 1 8 1.45 0.55 22 0.4 1 27 1.69 0.61 24 0.4 8 75 1.83 0.59 26 0.5 2 108 2.05 0.40 E PB 018A7-70 S-PARA M ETERS 2V, 15m A (GH z) M A G A N G M A G A N G M A G A N G M A G A NG