ECH8601M-TL-H ETC2

Document overview

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Technical content

Features

Built-in gate protection resistor 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Halogen free compliance Protection diode in Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 24 V Gate-to-Source Voltage V GSS ±12 V Drain Current (DC) I D 8A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 60 A Allowable Power Dissipation P D When mounted on ceramic substrate (1000mm ×0.8mm) 1unit 1.5 W Total Dissipation P T When mounted on ceramic substrate (1000mm ×0.8mm) 1.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7011A-003 Product & Package Information

  • Package : ECH8
  • JEITA, JEDEC : -
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection 8765 1234 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain ECH8 1 4 0.15 0 to 0.02 0.250.25 2.8 2.3 0.65 2.9 0.3 0.9 0.07 Top View Bottom View TL ECH8601M-TL-H TL Lot No. SMD Type MosfetsMosMosfetsMos

Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 24 V Zero-Gate Voltage Drain Current I DSS V DS=20V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 0.5 1.3 V Forward Transfer Admittance | yfs | VDS=10V, ID=4A 3.1 5.3 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=4A, VGS=4.5V 13.5 17 23 m Ω RDS(on)2 I D=4A, VGS=4.0V 14 18 24 m Ω RDS(on)3 I D=4A, VGS=3.1V 14.5 20 30 m Ω RDS(on)4 I D=2A, VGS=2.5V 16 24 35 m Ω Turn-ON Delay Time td(on) See specifi ed Test Circuit. 300 ns Rise Time tr 1000 ns Turn-OFF Delay Time td(off) 3000 ns Fall Time tf 1800 ns Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=8A 7.5 nC Gate-to-Source Charge Qgs 1.5 nC Gate-to-Drain “Miller” Charge Qgd 2.0 nC Diode Forward Voltage VSD IS=8A, VGS=0V 0.8 1.2 V Switching Time Test Circuit

Ordering Information

Device Package Shipping memo ECH8601M-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free PW=10μs D.C.≤1% P. G 50Ω Rg Rg=1kΩ G S D ID=4A RL=2.5Ω VDD=10V VOUT ECH8601M VIN VIN SMD Type MosfetsMosMosfetsMos

Gate-to-Source V oltage, VGS -- V ID -- VGS Drain Current, ID -- A IT13573 VDS=10V --25 C Ta=75 C C Drain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A IT13805 VGS=1.5V 2.5V 4.0V 10.0V 3.1V 4.5V Gate-to-Source V oltage, VGS -- V RDS(on) -- VGS Drain Current, ID -- A Diode Forward V oltage, VSD -- V Source Current, IS -- A IS -- VSD Static Drain-to-Source On-State Resistance, RDS(on) -- m Ω 0.1 1.0 1.0 1075327 532 C Ta= --25 C IT13575 VDS=10V IT13576 0.001 0.01 0.1 1.0 VGS=0V Ta=75 C C --25 C 81 0 Ta=25 C ID=2A IT13574 C Drain Current, ID -- A SW Time -- ID Switching Time, SW Time -- ns Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- C RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- m Ω 0.1 1.0 23 5 7 23 5 7 10 1000 100 td(on) IT13857 td(off) tf VDD=10V VGS=4.5V tr 012345 8 76 4.0 4.5 2.5 3.5 3.0 1.5 2.0 0.5 1.0 VDS=10V ID=8A IT13858 IT13856 --60 --40 --20 0 20 40 60 80 100 140 120 160 VGS =3.1V , I D=4.0A VGS =2.5V , I D=2.0A VGS=4.5V , I D=4.0A VGS=4.0V , ID=4.0A Forward Transfer Admittance, | y fs | -- S y fs | -- ID SMD Type MosfetsMosMosfetsMos

Ambient Temperature, Ta -- C PD -- Ta Allowable Power Dissipation, PD -- W 20 40 0.6 1.0 1.4 1.5 1.8 0.4 0.2 0.8 1.2 1.6 60 80 100 120 140 160 IT13722 Total Dissipation 1unit When mounted on ceramic substrate (1000mm ✕0.8mm) A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A IT13721 0.1 1.0 0.01 0.01 0.1 5723 2 1.05732 105733 25 Operation in this area is limited by RDS(on). 100 μs 100ms DC operation 10ms 1ms 100 IDP=60A ID=8A PW μs Ta=25 C Single pulse When mounted on ceramic substrate (1000mm ✕0.8mm) 1unit SMD Type MosfetsMosMosfetsMos

Outline Drawing Land Pattern Example ECH8601M-TL-H Mass (g) Unit 0.02 * For reference mm Unit: mm 0.4 0.6 2.8 0.65 SMD Type MosfetsMosMosfetsMos