DZ23

DZ23 VISHAY

Document overview

• Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
• PDF pages: 7

Technical content

www.vishay.com Vishay Semiconductors Rev. 2.0, 08-Nov-16 1 Document Number: 85765 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Zener Diodes, Dual

FEATURES

• Dual silicon planar Zener diodes, common cathode
• The Zener voltages are graded according to the international E24 standard. Standard Zener voltage tolerance is ± 5 %.
• The parameters are valid for both diodes in one case. V Z and Rzj of the two diodes in one case is  5 %
• AEC-Q101 qualified available
• ESD capability according to AEC-Q101: Human body model > 8 kV Machine model > 800 V
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom. 2.7 to 51 V Test current IZT 5m A VZ specification Pulse current Int. construction Dual common cathode Available

ORDERING INFORMATION

DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY DZ23-series DZ23C2V7-E3-08 to DZ23C51-E3-08 3000 (8 mm tape on 7" reel) 15 000 DZ23C2V7-HE3-08 to DZ23C51-HE3-08 DZ23C2V7-E3-18 to DZ23C51-E3-18 10 000 (8 mm tape on 13" reel) 10 000 DZ23C2V7-HE3-18 to DZ23C51-HE3-18 PACKAGE PACKAGE NAME WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS SOT-23 8.8 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Power dissipation Device on fiberglass substrate, see layout on page 6 Ptot 300 mW Thermal resistance, junction to ambient air Device on fiberglass substrate, see layout on page 6 RthJA 420 K/W Junction temperature Tj 150 °C Storage temperature range Tstg -65 to +150 °C Operating temperature range Top -55 to +150 °C Zener current I Z Ptot/VZ mA

www.vishay.com Vishay Semiconductors Rev. 2.0, 08-Nov-16 2 Document Number: 85765 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Tested with pulses tp = 5 ms ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PART NUMBER MARKING CODE ZENER VOLTAGE RANGE (1) TEST CURRENT REVERSE VOLTAGE DYNAMIC RESISTANCE f = 1 kHz TEMPERATURE COEFFICIENT OF ZENER VOLTAGE VZ at IZT1 IZT1 IZT2 VR at IR ZZ at IZT1 ZZK at IZT2 VZ at IZT1 V mA V nA  10-4/°C DZ23C2V7 V1 2.5 2.7 2.9 5 1 - - 75 (< 83) < 500 -9 -4 DZ23C3V0 V2 2.8 3.0 3.2 5 1 - - 80 (< 95) < 500 -9 -3 DZ23C3V3 V3 3.1 3.3 3.5 5 1 - - 80 (< 95) < 500 -8 -3 DZ23C3V6 V4 3.4 3.6 3.8 5 1 - - 80 (< 95) < 500 -8 -3 DZ23C3V9 V5 3.7 3.9 4.1 5 1 - - 80 (< 95) < 500 -7 -3 DZ23C4V3 V6 4 4.3 4.6 5 1 - - 80 (< 95) < 500 -6 -1 DZ23C4V7 V7 4.4 4.7 5 5 1 - - 70 (< 78) < 500 -5 2 DZ23C5V1 V8 4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480 -3 4 DZ23C5V6 V9 5.2 5.6 6 5 1 > 1 100 10 (< 40) < 400 -2 6 DZ23C6V2 V10 5.8 6.2 6.6 5 1 > 2 100 4.8 (< 10) < 200 -1 7 DZ23C6V8 V11 6.4 6.8 7.2 5 1 > 3 100 4.5 (< 8) < 150 2 7 DZ23C7V5 V12 7 7.5 7.9 5 1 > 5 100 4 (< 7) < 50 3 7 DZ23C8V2 V13 7.7 8.2 8.7 5 1 > 6 100 4.5 (< 7) < 50 4 7 DZ23C9V1 V14 8.5 9.1 9.6 5 1 > 7 100 4.8 (< 10) < 50 5 8 DZ23C10 V15 9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70 5 8 DZ23C11 V16 10.4 11 11.6 5 1 > 8.5 100 6 (< 20) < 70 5 9 DZ23C12 V17 11.4 12 12.7 5 1 > 9 100 7 (< 20) < 90 6 9 DZ23C13 V18 12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110 7 9 DZ23C15 V19 13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110 7 9 DZ23C16 V20 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 8 9.5 DZ23C18 V21 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 8 9.5 DZ23C20 V22 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 8 10 DZ23C22 V23 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 8 10 DZ23C24 V24 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 8 10 DZ23C27 V25 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 8 10 DZ23C30 V26 28 30 32 5 1 > 22.5 100 35 (< 80) < 250 8 10 DZ23C33 V27 31 33 35 5 1 > 25 100 40 (< 80) < 250 8 10 DZ23C36 V28 34 36 38 5 1 > 27 100 40 (< 90) < 250 8 10 DZ23C39 V29 37 39 41 5 1 > 29 100 50 (< 90) < 300 10 12 DZ23C43 V30 40 43 46 5 1 > 32 100 60 (< 100) < 700 10 12 DZ23C47 V31 44 47 50 5 1 > 35 100 70 (< 100) < 750 10 12 DZ23C51 V32 48 51 54 5 1 > 38 100 70 (< 100) < 750 10 12

www.vishay.com Vishay Semiconductors Rev. 2.0, 08-Nov-16 3 Document Number: 85765 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Forward Characteristics Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature Fig. 3 - Dynamic Resistance vs. Zener Current Fig. 4 - Dynamic Resistance vs. Zener Current Fig. 5 - Dynamic Resistance vs. Zener Current Fig. 6 - Thermal Differential Resistance vs. Zener Voltage 18114 mA 103 102 10-1 10-2 10-3 10-4 10-5 IF VF 0 0.2 0.4 0.6 0.8 1 V TJ = 100 °C TJ = 25 °C 18115 mW 400 100 300 200 Ptot Tamb 0 100 200 °C 500 18117 1000 100 rzj 0.1 25 2 5 11 0 IZ TJ = 25 °C 2.7 25 100 mA 3.6 4.7 5.1 5.6 Ω 18119 100 rzj 0.1 25 2 5 11 0 IZ 25 100 mA Ω TJ = 25 °C 6.8/8.2 6.2 18120 103 Ω 0.1 23 4 5 23 4 5 11 0 mA Rzj IZ Tj = 25 °C 47 + 51 102 18121 103 102 Rzth Ω 1 23 4 5 23 4 5 10 100 V VZ at IZ = 5 mA negative positive Δ Δ VZ Tj Rzth = RthA x VZ x

www.vishay.com Vishay Semiconductors Rev. 2.0, 08-Nov-16 4 Document Number: 85765 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 7 - Dynamic Resistance vs. Zener Voltage Fig. 8 - Temperature Dependence of Zener Voltage vs. Zener Voltage Fig. 9 - Change of Zener Voltage vs. Junction Temperature Fig. 10 - Temperature Dependence of Zener Voltage vs. Zener Voltage Fig. 11 - Change of Zener Voltage vs. Junction Temperature Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener voltage 18122 100 Ω Rzj Tj = 25 °C IZ = 5 mA 1 23 4 5 23 4 5 10 100 V VZ 18123 Δ - 5 mV/°C Δ VZ Tj 1 23 4 5 23 4 5 10 100 V VZ 5 mA 1 mA 20 mA IZ = 18124 VZ at IZ = 5 mA 25 15 6.2 5.9 5.6 5.1 4.73.6 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 - 1 - 0.2 VZ V Tj 02 0 4 0 6 0 8 0 100 120 140 C Δ 18125 Δ 100 mV/°C Δ VZ Tj 0 20 40 80 60 100 V VZ IZ = 5 mA 18126 Δ - 1 V V Z 0 10060 T j 20 40 120 80 140 °C IZ = 2 mA 18127 Δ 1.6 1.2 0.8 0.4 - 0.4 V VZ 1.4 0.6 0.2 - 0.2 23 4 5 23 4 5 10 100 V VZ at IZ = 5 mA VZ = Rzth x IZΔ

www.vishay.com Vishay Semiconductors Rev. 2.0, 08-Nov-16 5 Document Number: 85765 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener voltage Fig. 14 - Breakdown Characteristics Fig. 15 - Breakdown Characteristics Fig. 16 - Breakdown Characteristics LAYOUT FOR RthJA TEST Thickness: fiberglass 0.059" (1.5 mm) Copper leads 0.012" (0.3 mm) 18128 Δ V VZ 0 20 40 60 80 100 V VZ IZ = 5 mA IZ = 2 mA VZ = Rzth x IZΔ 18111 Test current IZ 5 mA 1 234567 890 10 V VZ 3.3 3.9 5.62.7 mA lZ Tj = 25 °C 8.2 6.84.7 18112 10 20 300 40 V VZ mA l Z Test current IZ 5 mA Tj = 25 °C10 18113 mA l Z 10 20 30 40 50 60 70 80 900 100 V VZ Test current IZ 5 mA Tj = 25 °C 17451 15 (0.59) 12 (0.47) 0.8 (0.03) 5 (0.2) 7.5 (0.3) 3 (0.12) 1 (0.4) 1 (0.4) 2 (0.8) 2 (0.8) 1.5 (0.06) 5.1 (0.2)

www.vishay.com Vishay Semiconductors Rev. 2.0, 08-Nov-16 6 Document Number: 85765 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE DIMENSIONS in millimeters (inches): SOT-23 Foot print recommendation: Rev. 8 - Date: 23.Sept.2009 17418 Document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.7 (0.028) 0.9 (0.035) 0° to 8° 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)

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