DTD143EK ROHM

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

DTD143EK / DTD143EC / DTD143ES Transistors Rev.A 1/3 Digital transistors (built-in resistors) DTD143EK / DTD143EC / DTD143ES zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making device design easy. zStructure NPN digital transistor (Built-in resistor type) zEquivalent circuit R 1 R 2 IN GND OUT IN GND OUT zExternal dimensions (Unit : mm) 3±0.2(15Min.) 4±0.2 2 ±0.2 0.450.5 0.45 (1) (2) (3) −0.05 +0.15 +0.15 −0.05 2.5+0.4 −0.1 3Min. (1) GND (2) OUT (3) IN ROHM : SPT EIAJ : SC-72 DTD143ES 0 to 0.1 0.2Min. 2.4±0.2 1.3 0.95 0.45±0.1 0.15 0.4 2.9±0.2 1.9±0.2 0.950.95 +0.2 −0.1 −0.1 +0.2 +0.1 −0.06+0.1 −0.05 (2)(1) (3) (1) GND (2) IN (3) OUT ROHM : SST3 DTD143EC All terminals have same dimensions Abbreviated symbol : R23 0 to 0.1 2.8±0.2 1.6 0.3 to 0.6 1.1 0.8±0.1 0.15 0.4 2.9±0.2 1.9±0.2 0.950.95 +0.2 −0.1 −0.1 +0.2 +0.1 −0.06+0.1 −0.05 (2)(1) (3) (1) GND (2) IN (3) OUT ROHM : SMT3 EIAJ : SC-59 DTD143EK All terminals have same dimensions Abbreviated symbol : F23 zAbsolute maximum ratings (Ta=25°C) Limits (DTD143E ) Parameter Symbol VCC 50 −10 to +30 500 200 300 150 −55 to +150 V VIN V mA mW I C Pd Tj Tstg Unit KC S Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature

DTD143EK / DTD143EC / DTD143ES Transistors Rev.A 2/3 zElectrical characteristics (Ta=25°C) Parameter Symbol VI (off) VI (on) VO (on) II IO (off) R 1 G I R 2 / R1 fT Min. 3.29 0.8 0.1 4.7 200 0.5 0.3 1.8 0.5 6.11 1.2 V V CC =5V, IO =100µA VO =0.3V, IO =20mA IO / II=50mA / 2.5mA VI=5V VCC =50V, VI=0V VO =5V, IO =50mA VCE =10V, IE= −50mA, f=100MHz ∗ V mA µA kΩ MHz Typ. Max. Unit Conditions ∗Transition frequency of the device Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency zPackaging specifications Taping Taping Taping SMT3 SST3 DTD143EK Type DTD143EC T146 3000 SPT TP 5000 T116 3000 −DTD143ES − Package Packaging type Code Basic ordering unit (pieces) zElectrical characteristic curves VO =0.3V INPUT VOLTAGE : VI (on) (V) OUTPUT CURRENT : I O (A) 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m 500m 200m 100m 100 5 25˚C 100˚C Ta= −40˚C Fig.1 Input voltage vs. output current (ON characteristics) VCC =5V INPUT VOLTAGE : VI (off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) OUTPUT CURRENT : Io (A) 10m 500µ 200µ 100µ 50µ 20µ 10µ Ta=100˚C 25˚C −40˚C 1m 2m 5m 10m 100m 50m20m 200m 500m500µ 100 200 500 VO =5V OUTPUT CURRENT : I O (A) DC CURRENT GAIN : GI Fig.3 DC current gain vs. output current Ta=100˚C 25˚C −40˚C

DTD143EK / DTD143EC / DTD143ES Transistors Rev.A 3/3 OUTPUT CURRENT : I O (A) OUTPUT VOLTAGE : V O (on) (V) Fig.4 Output voltage vs. output current lO / lI=20 500µ 1m 2m 5m 10m 20m 50m 500m 100m 200m 500m 200m 100m 50m 20m 10m 25˚C −40˚C Ta=100˚C

Appendix1-Rev1.0 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.