DT430 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN Darlington Power Transistor DT430
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= 300V(Min)
- High DC Current Gain : h FE= 2000(Min.)@ IC= 4A
- Low Collector Saturation Voltage : V CE(sat)= 3.0V(Max.)@ IC= 6A
APPLICATIONS
- Switching for dynamotor excitation
- General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 2 isc Silicon NPN Darlington Power Transistor DT430
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage I C=10mA ;IB=0 300 V V(BR)CBO Collector-Base Breakdown Voltage I C=1mA ;IE=0 400 V V(BR)EBO Emitter-Base Breakdown Voltage I E=50mA ;IC=0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage I C=1A; IB=10mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage I C=6A; IB=50mA 3.0 V ICBO Collector Cutoff Current V CB= 400V; IE= 0 100 μA IEBO Emitter Cutoff Current V EB= 7V; IC= 0 100 μA hFE-1 DC Current Gain I C= 4A; VCE= 4V 2000 hFE-2 DC Current Gain I C= 5mA; VCE= 4V 300