DSI30-08A ISC
Document overview
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- PDF pages: 2
Technical content
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FEATURES
- Planar passivatedchips
- Verylowleakage current
- Verylowforwardvoltage drop
- Improvedthermalbehaviour
APPLICATIONS
- Diode formain rectification
- Forsingle andthree phase bridgeconfigurations ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VRRM RecurrentPeakReverseVoltage 800 V IFAV AverageForwardRectifiedCurrent 30 A PD MaximumPowerDissipation 160 W TJ JunctionTemperature 175 ℃ Tstg StorageTemperatureRange -55~175 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 0.9 ℃/W ELECTRICALCHARACTERISTICS(TC=25℃) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VF DiodeForwardVoltage V IR ReverseCurrent VR=VRRM;TJ=25℃ -- 40 uA VR=VRRM;TJ=150℃ -- 1.5 mA
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