DS91M047

DS91M047 125 MHz Quad M-LVDS Line Driver datasheet (Rev. E)

Document overview

• Manufacturer or author: Texas Instruments, Incorporated [SNLS145,E]
• PDF pages: 18

Technical content

R T = ZLOADED Line Card in SLOT N M-LVDS Receivers R T R TZ0 R T R TZ0 R T R TZ0 DS91M047 www.ti.com SNLS145E –JUNE 2008–REVISED APRIL 2013 DS91M047125MHzQuadM-LVDSLineDriver Check forSamples: DS91M047 1FEATURES DESCRIPTION The DS91M047 isa high-speedquad M-LVDS line 2• DC -125 MHz /250 Mbps Low Jitter,Low driverdesignedfordrivingclockordatasignalstoupSkew, Low Power Operation tofourmultipointnetworks.• Conforms toTIA/EIA-899M-LVDS Standard M-LVDS (MultipointLVDS) is a new familyof bus• ControlledTransitionTimes (2ns typ) interfacedevices based on LVDS technologyMinimizeReflections specificallydesigned for multipointand multidrop

• 8 kV ESD on M-LVDS Pins ProtectsAdjoining cable and backplane applications.It differsfrom Components standardLVDS inprovidingincreaseddrivecurrentto handledoubleterminationsthatarerequiredinmulti-• Flow-Through PinoutSimplifiesPCB Layout point applications.Controlled transitiontimes• IndustrialOperatingTemperature Range minimizereflectionsthatare common in multipoint(−40°C to+85°C) configurationsdue tounterminatedstubs.
• Availableina Space Saving SOIC-16 Package The DS91M047 acceptsLVTTL/LVCMOS inputlevels and translatesthem to M-LVDS signallevelswithAPPLICATIONS transitiontimes of greaterthan 1 ns. The device providesthe DE and DE inputsthatare ANDed• Multidrop/MultipointClock and Data togetherand controltheTRI-STATE outputs.The DEDistribution and DE inputsarecommon toallfourdrivers.• High-Speed,Low Power, Short-Reach AlternativetoTIA/EIA-485/422 The DS91M047 has a flow-throughpinoutforeasy PCB layout.The DS91M047 provides a new• Clock DistributioninAdvancedTCA (ATCA) alternativefor high speed multipointinterfaceand MicroTCA (μTCA, uTCA) Backplanes applications.Itispackaged ina space savingSOIC- 16 package. TYPICAL APPLICATION Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2008–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

SNLS145E –JUNE 2008–REVISED APRIL 2013 www.ti.com Connection Diagrams PIN DESCRIPTIONS Pin No. Name Description 2,3,6,7 DI Driverinputpin,LVCMOS compatible. 10,11,14,15 A Non-invertingdriveroutputpin,M-LVDS levels. 9,12,13,16 B Invertingdriveroutputpin,M-LVDS levels. 1 DE Driverenablepin:When DE islow,thedriverisdisabled.When DE ishighand DE isloworopen,the driverisenabled.IfbothDE and DE areopen circuit,thenthedriverisdisabled. 8 DE Driverenablepin:When DE ishigh,thedriverisdisabled.When DE isloworopen and DE ishigh,the driverisenabled.IfbothDE and DE areopen circuit,thenthedriverisdisabled. 4 VDD Power supplypin,+3.3V ± 0.3V

5 GND Ground pin

AllothercombinationsofENABLE inputs X Z Z

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www.ti.com SNLS145E –JUNE 2008–REVISED APRIL 2013 These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. ABSOLUTE MAXIMUM RATINGS (1)(2) Power SupplyVoltage −0.3Vto+4V LVCMOS InputVoltage −0.3Vto(VDD + 0.3V) M-LVDS OutputVoltage −1.9Vto+5.5V M-LVDS OutputShortCircuitCurrentDuration Continuous JunctionTemperature +140°C StorageTemperatureRange −65°C to+150°C Lead TemperatureRange Soldering(4sec.) +260°C Maximum Package Power Dissipation@ +25°C D Package 2.21W DerateD Package 19.2mW/ °C above +25°C Package ThermalResistance(4-Layer,2 oz.Cu, θJA +52°C/W JEDEC) θJC +19°C/W ESD Susceptibility HBM ≥8 kV MM ≥250V CDM ≥1250V (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothedevicemay occur,includinginoperabilityand degradationof devicereliabilityand/orperformance.Functionaloperationofthedeviceand/ornon-degradationattheAbsoluteMaximum Ratingsor otherconditionsbeyond thoseindicatedintheisnotimplied.The Recommended OperatingConditionsindicateconditionsatwhichthe deviceisfunctionaland thedeviceshouldnotbe operatedbeyond such conditions. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexas InstrumentsSalesOffice/Distributorsforavailabilityand specifications. RECOMMENDED OPERATING CONDITIONS Min Typ Max Units SupplyVoltage(VDD) +3.0 +3.3 +3.6 V VoltageatAny Bus Terminal(SeparateorCommon-Mode) −1.4 +3.8 V HighLevelInputVoltage(VIH) 2.0 VDD V Low LevelInputVoltage(VIL) 0 0.8 V OperatingFreeAirTemperature(TA) −40 +25 +85 °C Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:DS91M047

SNLS145E –JUNE 2008–REVISED APRIL 2013 www.ti.com DC ELECTRICAL CHARACTERISTICS (1)(2)(3)(4) Over supplyvoltageand operatingtemperatureranges,unlessotherwisespecified. Symbol Parameter Conditions Min Typ Max Units LVCMOS DC Specifications VIH High-LevelInputVoltage 2.0 VDD V VIL Low-LevelInputVoltage GND 0.8 V IIH High-LevelInputCurrent VIH = 3.6V -15 ±1 15 μA IIL Low-LevelInputCurrent VIL= 0V -15 ±1 15 μA VCL InputClamp Voltage IIN = -18mA -1.5 V M-LVDS DC Specifications |VAB | DifferentialOutputVoltageMagnitude 480 650 mV R L = 50Ω,C L = 5 pF ΔVAB Change inDifferentialOutputVoltageMagnitude See Figure1 and Figure3 −50 50 mVBetween LogicStates VOS(SS) Steady-StateCommon-Mode OutputVoltage 0.30 1.6 2.10 V R L = 50Ω |ΔVOS(SS)| Change inSteady-StateCommon-Mode OutputVoltage See Figure1 and Figure2 0 50 mVBetween LogicStates VA(OC) Maximum Steady-StateOpen-CircuitOutputVoltage 0 2.4 V See Figure4 VB(OC) Maximum Steady-StateOpen-CircuitOutputVoltage 0 2.4 V VP(H) VoltageOvershoot,Low-to-HighLevelOutput(5) R L = 50Ω,C L = 5 pF 1.2VSS V C D = 0.5pF,see Figure6VP(L) VoltageOvershoot,High-to-LowLevelOutput(5) −0.2VSS Vand Figure7 IOS OutputShort-CircuitCurrent(6) See Figure5 -43 43 mA VA = 3.8V,VB = 1.2V 0 32 μA IA DriverHigh-ImpedanceOutputCurrent VA = 0V or2.4V,VB = 1.2V −20 20 μA VA = −1.4V,VB = 1.2V −32 0 μA VA = 3.8V,VB = 1.2V 0 32 μA IB DriverHigh-ImpedanceOutputCurrent VA = 0V or2.4V,VB = 1.2V −20 20 μA VA = −1.4V,VB = 1.2V −32 0 μA IAB DriverHigh-ImpedanceOutputDifferentialCurent VA = VB,−1.4V≤ V ≤ 3.8V −4 4 μA(IA − IB) IA(OFF) DriverHigh-ImpedanceOutputPower-OffCurrent VA = 3.8V,VB = 1.2V DE = 0V 0 32 μA 0V ≤ VDD ≤ 1.5V VA = 0V or2.4V,VB = 1.2V DE = 0V −20 20 μA 0V ≤ VDD ≤ 1.5V VA = −1.4V,VB = 1.2V DE = 0V −32 0 μA 0V ≤ VDD ≤ 1.5V IB(OFF) DriverHigh-ImpedanceOutputPower-OffCurrent VA = 3.8V,VB = 1.2V DE = 0V 0 32 μA 0V ≤ VDD ≤ 1.5V VA = 0V or2.4V,VB = 1.2V DE = 0V −20 20 μA 0V ≤ VDD ≤ 1.5V VA = −1.4V,VB = 1.2V DE = 0V −32 0 μA 0V ≤ VDD ≤ 1.5V (1) The ElectricalCharacteristicstableslistensuredspecificationsunderthelistedRecommended OperatingConditionsexceptas otherwisemodifiedorspecifiedby theElectricalCharacteristicsConditionsand/orNotes.Typicalspecificationsareestimationsonlyand arenotensured. (2) Currentintodevicepinsisdefinedas positive.Currentoutofdevicepinsisdefinedas negative.Allvoltagesarereferencedtoground exceptVOD and ΔVOD . (3) Typicalvaluesrepresentmost likelyparametricnorms forVDD = +3.3V and TA = +25°C, and attheRecommended OperatingConditions atthetimeofproductcharacterizationand arenotensured. (4) C L includesfixturecapacitanceand C D includesprobecapacitance. (5) Specificationisspecifiedby characterizationand isnottestedinproduction. (6) Outputshortcircuitcurrent(IOS )isspecifiedas magnitudeonly,minus signindicatesdirectiononly.

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www.ti.com SNLS145E –JUNE 2008–REVISED APRIL 2013 DC ELECTRICAL CHARACTERISTICS (1)(2)(3)(4)(continued) Over supplyvoltageand operatingtemperatureranges,unlessotherwisespecified. Symbol Parameter Conditions Min Typ Max Units IAB(OFF) DriverHigh-ImpedanceOutputPower-OffCurrent VA = VB,−1.4V≤ V ≤ 3.8V (IA(OFF) − IB(OFF)) DE = 0V −4 4 μA 0V ≤ VDD ≤ 1.5V C A DriverOutputCapacitance 7.8 pF C B DriverOutputCapacitance 7.8 pF VDD = 0V C AB DriverOutputDifferentialCapacitance 3 pF C A/B DriverOutputCapacitanceBalance(CA/CB) 1 ICC Power SupplyCurrent R L = 50Ω (AllOutputs) DI = VDD orGND (AllInputs) 65 75 mADE = VDD ,DE = GND f= 125 MHz ICCZ TRI-STATE Power SupplyCurrent R L = 50Ω (AllOutputs) DI = VDD orGND (AllInputs) 19 24 mA DE = GND, DE = VDD SWITCHING CHARACTERISTICS (1)(2)(3) Over supplyvoltageand operatingtemperatureranges,unlessotherwisespecified. Symbol Parameter Conditions Min Typ Max Units tPHL DifferentialPropagationDelayHightoLow 1.5 3.1 5.0 ns tPLH DifferentialPropagationDelayLow toHigh 1.5 3.1 5.0 ns tSKD1 DifferentialPulseSkew |tPHL − tPLH |(4)(5) 0 70 140 ps R L = 50ΩtSKD2 Channel-to-ChannelSkew (4)(6) 0 70 200 ps C L = 5 pF, tSKD3 DifferentialPart-to-PartSkew (4)(7) C D = 0.5pF 0 0.8 1.5 ns(ConstantTA and VDD ) See Figure6 and Figure7 tSKD4 DifferentialPart-to-PartSkew (8) 0 3.5 ns tTLH RiseTime(4) 1.1 2.0 3.0 ns tTHL FallTime(4) 1.1 2.0 3.0 ns tPHZ DisableTime HightoZ 7 12.5 nsR L = 50Ω tPLZ DisableTime Low toZ 7 12.5 nsC L = 5 pF, C D = 0.5pFtPZH EnableTime Z toHigh 7 12.5 ns See Figure8 and Figure9tPZL EnableTime Z toLow 7 12.5 ns fMAX Maximum OperatingFrequency See (4) 125 MHz (1) The ElectricalCharacteristicslistensuredspecificationsunderthelistedRecommended OperatingConditionsexceptas otherwise modifiedorspecifiedby theElectricalCharacteristicsConditionsand/orNotes.Typicalspecificationsareestimationsonlyand arenot ensured. (2) Typicalvaluesrepresentmost likelyparametricnorms forVDD = +3.3V and TA = +25°C, and attheRecommended OperatingConditions atthetimeofproductcharacterizationand arenotensured. (3) C L includesfixturecapacitanceand C D includesprobecapacitance. (4) Specificationisspecifiedby characterizationand isnottestedinproduction. (5) tSKD1 ,|tPLHD − tPHLD |,PulseSkew, isthemagnitudedifferenceindifferentialpropagationdelaytimebetween thepositivegoingedge and thenegativegoingedge ofthesame channel. (6) tSKD2 ,Channel-to-ChannelSkew, isthedifferenceinpropagationdelay(tPLHD ortPHLD )among alloutputchannels. (7) tSKD3 ,Part-to-PartSkew, isdefinedas thedifferencebetween theminimum and maximum differentialpropagationdelays.This specificationappliestodevicesatthesame VDD and within5°C ofeach otherwithintheoperatingtemperaturerange. (8) tSKD4 ,Part-to-PartSkew, isthedifferentialchannel-to-channelskew ofany eventbetween devices.Thisspecificationappliestodevices overrecommended operatingtemperatureand voltageranges,and acrossprocessdistribution.tSKD4 isdefinedas |Max − Min| differentialpropagationdelay. Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:DS91M047

A B ~ 1.9V ~ 1.3V 'VOS(SS) VOS(PP)VOS DS91M047 SNLS145E –JUNE 2008–REVISED APRIL 2013 www.ti.com PARAMETER MEASUREMENT INFORMATION Figure1. DifferentialDriverTestCircuit Figure2. DifferentialDriverWaveforms Figure3. DifferentialDriverFullLoad TestCircuit

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www.ti.com SNLS145E –JUNE 2008–REVISED APRIL 2013 PARAMETER MEASUREMENT INFORMATION (continued) Figure4. DifferentialDriverDC Open TestCircuit Figure5. DifferentialDriverShort-CircuitTestCircuit Figure6. DriverPropagationDelay and TransitionTime TestCircuit Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:DS91M047

SNLS145E –JUNE 2008–REVISED APRIL 2013 www.ti.com PARAMETER MEASUREMENT INFORMATION (continued) Figure7. DriverPropagationDelay and TransitionTime Waveforms Figure8. DriverTRI-STATE Delay TestCircuit

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www.ti.com SNLS145E –JUNE 2008–REVISED APRIL 2013 PARAMETER MEASUREMENT INFORMATION (continued) Figure9. DriverTRI-STATE Delay Waveforms Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:DS91M047

4.5 4.0 3.5 3.0 2.5 2.0 1.5 -50 -10 30 70 110 150 f = 125 MHz DRIVER PROPAGATION DELAY (tPHLD) (ns) TEMPERATURE (° C) VCC = 3.0V VCC = 3.3V VCC = 3.6V 180 150 120 0 25 50 75 100 125 VCC = 3.3V TA = 25° C R L = 50: On all CH) DE = H DE* = L POWER SUPPLY CURRENT (mA) FREQUENCY (MHz) 900 750 600 450 300 150 0 25 50 75 100 125 f = 1 MHz VCC = 3.3V TA = 25° C VOD - DRIVER OUTPUT AMPLITUDE (mV) RESISTIVE LOAD (:) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 -50 -10 30 70 110 150 f = 125 MHz DRIVER PROPAGATION DELAY (tPLHD) (ns) TEMPERATURE (° C) VCC = 3.0V VCC = 3.3V VCC = 3.6V 2.8 2.5 2.2 1.9 1.6 1.3 1.0 -50 -10 30 70 110 150 f = 125 MHz DRIVER RISE TIME (10-90%) (ns) TEMPERATURE (° C) VCC = 3.0V VCC = 3.3V VCC = 3.6V 2.8 2.5 2.2 1.9 1.6 1.3 1.0 -50 -10 30 70 110 150 f = 125 MHz DRIVER FALL TIME (10-90%) (ns) TEMPERATURE (° C) VCC = 3.0V VCC = 3.3V VCC = 3.6V DS91M047 SNLS145E –JUNE 2008–REVISED APRIL 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS Figure10.DriverRise Time as a FunctionofTemperature Figure11.DriverFallTime as a FunctionofTemperature Figure12.DriverOutput SignalAmplitude as a Functionof Figure13.DriverPropagationDelay (tPLHD)as a Function ResistiveLoad ofTemperature Figure14.DriverPropagationDelay (tPHLD)as a Function Figure15.DriverPower Supply Currentas a Functionof ofTemperature Frequency

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www.ti.com SNLS145E –JUNE 2008–REVISED APRIL 2013

REVISION HISTORY

Changes from RevisionD (April2013)toRevisionE Page Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:DS91M047

www.ti.com 11-Nov-2025 PACKAGING INFORMATION Orderable part number Status (1) Material type (2) Package | Pins Package qty | Carrier RoHS (3) Lead finish/ Ball material (4) MSL rating/ Peak reflow (5) Op temp (°C) Part marking (6) DS91M047TMA/NOPB Active Production SOIC (D) | 16 48 | TUBE Yes SN Level-1-260C-UNLIM -40 to 85 DS91M047 TMA DS91M047TMA/NOPB.A Active Production SOIC (D) | 16 48 | TUBE Yes SN Level-1-260C-UNLIM -40 to 85 DS91M047 TMA DS91M047TMAX/NOPB Active Production SOIC (D) | 16 2500 | LARGE T&R Yes SN Level-1-260C-UNLIM -40 to 85 DS91M047 TMA DS91M047TMAX/NOPB.A Active Production SOIC (D) | 16 2500 | LARGE T&R Yes SN Level-1-260C-UNLIM -40 to 85 DS91M047 TMA (1) Status: For more details on status, see our product life cycle. (2) Material type: When designated, preproduction parts are prototypes/experimental devices, and are not yet approved or released for full production. Testing and final process, including without limitation quality assurance, reliability performance testing, and/or process qualification, may not yet be complete, and this item is subject to further changes or possible discontinuation. If available for ordering, purchases will be subject to an additional waiver at checkout, and are intended for early internal evaluation purposes only. These items are sold without warranties of any kind. (3) RoHS values: Yes, No, RoHS Exempt. See the TI RoHS Statement for additional information and value definition. (4) Lead finish/Ball material: Parts may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two lines if the finish value exceeds the maximum column width. (5) MSL rating/Peak reflow: The moisture sensitivity level ratings and peak solder (reflow) temperatures. In the event that a part has multiple moisture sensitivity ratings, only the lowest level per JEDEC standards is shown. Refer to the shipping label for the actual reflow temperature that will be used to mount the part to the printed circuit board. (6) Part marking: There may be an additional marking, which relates to the logo, the lot trace code information, or the environmental category of the part. Multiple part markings will be inside parentheses. Only one part marking contained in parentheses and separated by a "~" will appear on a part. If a line is indented then it is a continuation of the previous line and the two combined represent the entire part marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1

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PACKAGE MATERIALS INFORMATION www.ti.com 10-Aug-2026 TAPE AND REEL INFORMATION Reel Width (W1) REEL DIMENSIONS A0B0K0WDimension designed to accommodate the component lengthDimension designed to accommodate the component thicknessOverall width of the carrier tapePitch between successive cavity centersDimension designed to accommodate the component width TAPE DIMENSIONSK0 P1B0WA0Cavity QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Pocket QuadrantsSprocket HolesQ1Q1Q2Q2Q3Q3Q4Q4User Direction of Feed P1ReelDiameter *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION www.ti.com 10-Aug-2026 TAPE AND REEL BOX DIMENSIONS Width (mm) W LH *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) DS91M047TMAX/NOPB SOIC D 16 2500 367.0 367.0 35.0 Pack Materials-Page 2

PACKAGE MATERIALS INFORMATION www.ti.com 10-Aug-2026 TUBE L - Tube length T - Tube height W - Tube width B - Alignment groove width *All dimensions are nominal Device Package Name Package Type Pins SPQ L (mm) W (mm) T (µm) B (mm) DS91M047TMA/NOPB D SOIC 16 48 495 8 4064 3.05 DS91M047TMA/NOPB.A D SOIC 16 48 495 8 4064 3.05 Pack Materials-Page 3

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