DS2003CMX TI
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B C D E F G DS2003 www.ti.com SNLS394J –JANUARY 2000–REVISED APRIL 2013 DS2003HighCurrent/VoltageDarlingtonDrivers Check forSamples: DS2003 1FEATURES DESCRIPTION The DS2003 comprises seven high voltage,high 2• Seven High Gain DarlingtonPairs currentNPN Darlingtontransistorpairs.All units• High Output Voltage(VCE = 50V) featurea common emitterand open collectoroutputs.
- High Output Current(IC = 350 mA) To maximize theireffectiveness,theseunitscontain suppression diodes for inductive loads and• TTL, PMOS, CMOS Compatible appropriateemitterbase resistorsforleakage.• Suppression Diodes forInductiveLoads The DS2003 has a seriesbase resistorto each• Extended Temperature Range Darlingtonpair,thus allowingoperationdirectlywith TTL orCMOS operatingatsupplyvoltagesof5.0V. The DS2003 offerssolutionsto a great many interfaceneeds, includingsolenoids,relays,lamps, smallmotors,and LEDs. Applicationsrequiringsink currentsbeyond thecapabilityofa singleoutputmay be accommodated by parallelingtheoutputs. Connection Diagram Top View Figure1. Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2000–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.
SNLS394J –JANUARY 2000–REVISED APRIL 2013 www.ti.com These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. AbsoluteMaximum Ratings(1)(2) StorageTemperatureRange −65°C to+150°C OperatingTemperatureRange, TA DS2003T −40°C to+125°C DS2003C −40°C to+85°C JunctionTemperatureRange, TJ −40°C to+150°C Lead Temperature Soldering,10 seconds 265°C ESD Ratings Human Body Model +/-2000V Machine Model +/-200V Package ThermalDissipationRatings InputVoltage −0.3Vto30V OutputVoltage 55V Emitter-BaseVoltage 6.0V ContinuousCollectorCurrent 500 mA ContinuousBase Current 25 mA (1) “AbsoluteMaximum Ratings”arethosevaluesbeyond whichthesafetyofthedevicecannotbe specified.They arenotmeant toimply thatthedevicesshouldbe operatedattheselimits.The ElectricalCharacteristicsprovideconditionsforactualdeviceoperation. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTISalesOffice/Distributorsforavailabilityand specifications. ElectricalCharacteristics TA = 25°C, unlessotherwisespecified(1) Parameter TestConditions Min Typ Max Units ICEX OutputLeakage TA = 25°C, VCE = 50V (Figure6) 20 μA Current TA = 85°C, VCE = 50V (Figure6) 100 TA = 125°C, VCE = 50V (Figure6)forDS2003T 150 VCE(Sat) Collector-Emitter IC = 350mA, IB = 500μA (Figure8)(2) 1.25 1.6 V SaturationVoltage IC = 200mA, IB = 350μA (Figure8) 1.1 1.3 IC = 100mA, IB = 250μA (Figure8) 0.9 1.1 II(ON) InputCurrent VI= 3.85V(Figure9) 0.93 1.35 mA II(OFF) InputCurrent IC = 500µA (Figure10) 50 100 μA (3) TA = +25°C 50 100 TA = +85°C 25 50 TA = +125C forDS2003T 10 25 VI(ON) InputVoltage VCE = 2.0V,IC = 200mA (Figure11) 2.4 V (4) VCE = 2.0V,IC = 250mA (Figure11) 2.7 VCE = 2.0V,IC = 300mA (Figure11) 3.0 C I InputCapacitance 15 30 pF tPLH Turn-OnDelay 0.5VIto0.5VO 1.0 μs tPHL Turn-OffDelay 0.5VIto0.5VO 1.0 μs (1) AlllimitsapplytothecompleteDarlingtonseriesexceptas specifiedfora singledevicetype. (2) Under normaloperatingconditionstheseunitswillsustain350 mA peroutputwithVCE (Sat)= 1.6Vat70°C witha pulsewidthof20 ms and a dutycycleof30%. (3) The II(OFF)currentlimitensuredagainstpartialturn-onoftheoutput. (4) The VI(ON)voltagelimitensuresa minimum outputsinkcurrentperthespecifiedtestconditions.
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www.ti.com SNLS394J –JANUARY 2000–REVISED APRIL 2013 ElectricalCharacteristics(continued) TA = 25°C, unlessotherwisespecified(1) Parameter TestConditions Min Typ Max Units IR Clamp Diode VR = 50V (Figure12) µA Leakage Current TA = 25°C 5 10 TA = 85°C 10 50 TA = 125°C forDS2003T 20 100 VF Clamp Diode IF = 350mA (Figure13) 1.7 2.0 V ForwardVoltage Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:DS2003
SNLS394J –JANUARY 2000–REVISED APRIL 2013 www.ti.com TypicalPerformance Characteristics CollectorCurrentvs CollectorCurrentvs SaturationVoltage InputCurrent Figure2. Figure3. Peak CollectorCurrentvs InputCurrentvs Duty Cycle and Number of InputVoltage Outputs (N16E Package) Figure4. Figure5.
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www.ti.com SNLS394J –JANUARY 2000–REVISED APRIL 2013 EQUIVALENT CIRCUITS TestCircuits Figure6. Figure7. Figure8. Figure9. Figure10. Figure11. Figure12. Figure13. Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:DS2003
SNLS394J –JANUARY 2000–REVISED APRIL 2013 www.ti.com TypicalApplications Figure14. TypicalLED Driver Figure15. TypicalRelay Driver
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www.ti.com SNLS394J –JANUARY 2000–REVISED APRIL 2013
REVISION HISTORY
Changes from RevisionI(April2013)toRevisionJ Page Copyright© 2000–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:DS2003
www.ti.com 7-Oct-2013 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples DS2003CM ACTIVE SOIC D 16 48 TBD Call TI Call TI -40 to 125 DS2003CM DS2003CM/NOPB ACTIVE SOIC D 16 48 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 DS2003CM DS2003CMX/NOPB ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 DS2003CM DS2003TM ACTIVE SOIC D 16 48 TBD Call TI Call TI -40 to 125 DS2003TM DS2003TM/NOPB ACTIVE SOIC D 16 48 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 DS2003TM DS2003TMX ACTIVE SOIC D 16 2500 TBD Call TI Call TI -40 to 125 DS2003TM DS2003TMX/NOPB ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 DS2003TM (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
www.ti.com 7-Oct-2013 Addendum-Page 2 (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 Pack Materials-Page 1
*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) DS2003CMX/NOPB SOIC D 16 2500 367.0 367.0 35.0 DS2003TMX SOIC D 16 2500 367.0 367.0 35.0 DS2003TMX/NOPB SOIC D 16 2500 367.0 367.0 35.0 PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 Pack Materials-Page 2
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