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1 / 7May.2015-REV.00 www.dyelec.com 1. Gate 2. Drain 3. Source Pin Definition: PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) ID (A) 85 8.5 @ VGS =10V 80 85V N-Channel Power MOSFET RDS(ON)<8.5mΩ @ VGS=10V High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Special designed for convertors and power controls Good stability and uniformity with high EAS Excellent package for good heat dissipation Green molding compound Block Diagram

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  • Case: TO-220 Package D G S Part No. Package Packing DMT80N85-TU TO-220 50pcs / Tube Application Power switching application Hard switched and High frequency circuits Uninterruptible power supply Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 85 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 80 A Drain Current-Continuous(TC=100℃) ID (100℃) 60 A Pulsed Drain Current IDM 320 A Maximum Power Dissipation PD 170 W Peak diode recovery voltage dv/dt 15 V/ns Derating factor 1.13 W/℃ Single pulse avalanche energy (Note 5) EAS 620 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃

85V N-Channel Power MOSFET May.2015-REV.00 www.dyelec.com Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 0.88 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS GS=0V V ID=250μA 87 89 - V Zero Gate Voltage Drain Current IDSS DS=V 85V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS GS=±V 20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) DS=VV GS,ID=250μA 2 2.85 4 V Drain-Source On-State Resistance RDS(ON) GS=V 10V, ID=40A - 6.8 8.5 m Ω Forward Transconductance gFS DS=V 25V,ID=40A 110 - - S Dynamic Characteristics (Note4) Input Capacitance Clss - - 4400 PF Output Capacitance Coss - - 340 PF Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, F=1.0MHz - 260 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - - 18 nS Turn-on Rise Time tr - - nS 12 Turn-Off Delay Time td(off) - - nS 56 Turn-Off Fall Time tf VDD=30V,ID=2A,RL=15Ω ,RG=2.5Ω ,VGS=10V - 15 - nS Total Gate Charge Qg - - 100 nC Gate-Source Charge Qgs - - 20 nC Gate-Drain Charge Qgd VDS=30V,ID=30A, VGS=10V - 30 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD GS=0V V,IS=40A - - 1.2 V Diode Forward Current (Note 2) IS - - 80 A Reverse Recovery Time trr - 36 nS Reverse Recovery Charge Qrr Tj=25℃,IF= 75A,di/dt=100A/μs (Note3) - 56 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃,VDD=40V,VG=10V,L=0.5mH,Rg=25Ω

TEST CIRCUITS AND WAVEFORMS(Cont.) 85V N-Channel Power MOSFET Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform VDD BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit tp Time Unclamped Inductive Switching Waveforms Jan.2015-REV.00 www.sddydz.com May.2015-REV.00 www.dyelec.com 80N85

85V N-Channel Power MOSFET May.2015-REV.00 www.dyelec.com 80N85 TO-220 Mechanical Drawing TO-220 Mechanical Drawing

Specifications of the products displayed herein are subject to change without notice. DIYI or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify DIYI for any damages resulting from such improper use or sale. 85V N-Channel Power MOSFET Mar.2015-REV.00 www.dyelec.com 80N85