7N60 DYELEC

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Technical content

1 / 9Mar.2015-REV.00 www.dyelec.com 1. Gate 2. Drain 3. Source Pin Definition: PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 1.0 @ VGS =10V 7 600V N-Channel Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) RDS(ON) < 1.0Ω @ VGS =10V, ID = 3.7A Fast switching capability Lead free in compliance with EU RoHS directive. Green molding compound

Ordering Information

  • Case: TO-251,TO-252,TO-220,ITO-220 PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 7 A Continuous Drain Current ID 7 A Pulsed Drain Current (Note 2) IDM 26 A Avalanche Energy Single Pulsed (Note 3) E AS 500 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation TO-220/TO-262/ TO-263 PD 140 W ITO-220 36 W TO-251/TO-252 54 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 19.5mH, IAS = 7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤7A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C Part No. Package Packing DMP7N60-TU TO-251 75pcs / Tube DMD7N60-TR TO-252 2.5Kpcs / 13” Reel DMT7N60-TU TO-220 50pcs / Tube DMF7N60-TU ITO-220 50pcs / Tube DMD7N60-TU TO-252 75pcs / Tube DMK7N60-TU TO-262 50pcs / Tube DMG7N60-TU TO-263 50pcs / Tube DMG7N60-TR TO-263 800pcs / 13" Reel Block Diagram D G S

600V N-Channel Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220/ITO-220 TO-262/TO-263 θJA 62.5 °C/W TO-251/ TO-252 160 Junction to Case TO-220/TO-262/TO-263 θJC 1.25 °C/W ITO-220 3.5 TO-251/ TO-252 2.5 PARAMETER SYMBOL T EST CONDITIONS TYP MIN MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS GSV = 0V, ID = 250μA 600 V Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 1 μA Gate-Source Leakage Current Forward IGSS VGS = 30V, VDS = 0V 100 nA Reverse e VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C 0.67 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) DSV = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) 0.83 1.0 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz 1200 1400 pF Output Capacitance COSS pF125 155 Reverse Transfer Capacitance CRSS pF40 50 SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 65 95 ns Turn-On Rise Time tR ns180 210 Turn-Off Delay Time tD(OFF) ns320 360 Turn-Off Fall Time tF 260 ns Total Gate Charge QG VDS= 480V,ID= 7A, VGS= 10V (Note 1, 2) 210 230 nC Gate-Source Charge QGS nC11 Gate-Drain Charge QGD nC38 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 7 A Maximum Pulsed Drain-Source Diode Forward Current I SM 25 A Reverse Recovery Time trr VGS = 0 V, IS = 7A, dIF/dt = 100 A/ μs (Note 1) 320 ns Reverse Recovery Charge QRR μC2.4 Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. .Essentially independent of operating temperature Mar.2015-REV.00 www.dyelec.com 220 VDD = 300V, ID =7A, RG = 25Ω (Note 1, 2) VGS=0V,IS=7A GSV = 10V, ID = 3.7A

TEST CIRCUITS AND WAVEFORMS 7N60 600V N-Channel Power MOSFET Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * SD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms Mar.2015-REV.00 www.dyelec.com

TEST CIRCUITS AND WAVEFORMS(Cont.) 7N60 600V N-Channel Power MOSFET Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform VDD BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit tp Time Unclamped Inductive Switching Waveforms Mar.2015-REV.00 www.dyelec.com

600V N-Channel Power MOSFET Mar.2015-REV.00 www.dyelec.com 100.1 1 Drain-to-Source Voltage, VDS (V) On-State Characteristics 0.1 Gate-Source Voltage, VGS (V) Transfer Characteristics 64 8 1 0 0.1 VGS Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V Bottorm:5.5V Notes: 1. 250µs Pulse Test 2. TC=25°C Notes: 1. VDS=50V 2. 250µs Pulse Test Drain-Source On-Resistance, RDS(ON) (Ω) Drain Current, ID (A) On-Resistance Variation vs. Drain Current and Gate Voltage 6 8 10 12 0.1 Source-Drain Voltage, VSD (V) Reverse Drain Current, IDR (A) On State Current vs. Allowable Case Temperature 0.6 Note: TJ=25°C Notes: 1. VGS=0V 2. 250µs Test VGS=20V VGS=10V

ITO-220 Mechanical Drawing 7N60 600V N-Channel Power MOSFET Mar.2015-REV.00 www.dyelec.com

600V N-Channel Power MOSFET 7 / 9 May,2015-REV.00 www.dyelec.com TO-262 Mechanical Drawing TO-263 Mechanical Drawing

600V N-Channel Power MOSFET Mar.2015-REV.00 www.dyelec.com

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