5N65 DYELEC

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Technical content

1 / 9Mar.2015-REV.00 www.dyelec.com 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 650 2.4 @ VGS =10V 5 650V N-Channel Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) RDS(ON) < 2.4Ω @ VGS =10V, ID = 2.5A Fast switching capability Lead free in compliance with EU RoHS directive. Green molding compound

Ordering Information

  • Case: TO-251,TO-252,TO-220,ITO-220, PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 5 A Continuous Drain Current ID 5 A Pulsed Drain Current (Note 2) IDM 20 A Avalanche Energy Single Pulsed (Note 3) E AS 210 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation TO-220,TO-262,TO-263 PD 100 W ITO-220 36 W TO-251/TO-252 54 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 16.8mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤5A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C Part No. Package Packing DMP5N65-TU TO-251 75pcs / Tube DMD5N65-TR TO-252 2.5Kpcs / 13” Reel DMT5N65-TU TO-220 50pcs / Tube DMF5N65-TU ITO-220 50pcs / Tube DMD5N65-TU TO-252 75pcs / Tube DMK5N65-TU TO-262 50pcs / Tube DMG5N65-TU TO-263 50pcs / Tube DMG5N65-TR TO-263 800pcs / 13" Reel Block Diagram D G S Pin Definition:

650V N-Channel Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL T EST CONDITIONS TYP MIN MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS GSV = 0V, ID = 250μA 650 V Drain-Source Leakage Current IDSS VDS = 6 50V, VGS = 0V 1 μA Gate-Source Leakage Current Forward IGSS VGS = 30V, VDS = 0V 100 nA Reverse e VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C 0.6 V/° С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) DSV = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) 2.0 2.4 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz 515 670 pF Output Capacitance COSS pF55 72 Reverse Transfer Capacitance CRSS pF6.5 8.5 SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 10 30 ns Turn-On Rise Time tR ns42 90 Turn-Off Delay Time tD(OFF) ns38 85 Turn-Off Fall Time tF 100 ns Total Gate Charge QG VDS= 520V,ID= 5.0A, VGS= 10V (Note 1, 2) 15 19 nC Gate-Source Charge QGS nC2.5 Gate-Drain Charge QGD nC6.6 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 5 A Maximum Pulsed Drain-Source Diode Forward Current I SM 20 A Reverse Recovery Time trr VGS = 0 V, IS = 5A, dIF/dt =

100 A/ μs (Note 1)

Reverse Recovery Charge QRR μC2.2 Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. .Essentially independent of operating temperature Mar.2015-REV.00 www.dyelec.com VDD = 325V, ID =5 A, RG = 25Ω (Note 1, 2) GSV = 0 V, IS = 5A GSV =10V, ID = 2.5A THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220/ITO-220 TO-262/TO-263 θJA 62.5 °C/W TO-251/ TO-252 110 Junction to Case θJC 2.35 °C/W ITO-220 5.5 TO-251/ TO-252 2.9 TO-220/ITO-220 TO-262/TO-263

TEST CIRCUITS AND WAVEFORMS 5N65 650V N-Channel Power MOSFET Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * SD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms Mar.2015-REV.00 www.dyelec.com

TEST CIRCUITS AND WAVEFORMS(Cont.) 5N65 650V N-Channel Power MOSFET Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform VDD BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit tp Time Unclamped Inductive Switching Waveforms Mar.2015-REV.00 www.dyelec.com

650V N-Channel Power MOSFET Mar.2015-REV.00 www.dyelec.com 101 100 10110-1 100 Drain-Source Voltage, VDS (V) Drain Current, ID (A) 10-1 *Notes: . 250µs Pu1. 1. 250 1 2. TC=25℃ VGS 5.0V Top: Top: Bottorm:4.5V On-Region Characteristics 10-2 100 10-1 Gate-Source Voltage, VGS (V) Drain Current, ID (A) Transfer Characteristics 64 8 1 0 101 *Notes: 1. . DS=40V 2. 250µs Pulse Test 25℃ 4.5V Drain-Source On-Resistance, RDS(ON) (Ω) Drain Current, ID (A) 100ms

ITO-220 Mechanical Drawing 5N65 650V N-Channel Power MOSFET Mar.10,2015-REV.00 www.sddydz.com

650V N-Channel Power MOSFET 7 / 9 May,2015-REV.00 www.dyelec.com TO-262 Mechanical Drawing TO-263 Mechanical Drawing

650V N-Channel Power MOSFET Mar.2015-REV.00 www.dyelec.com

Specifications of the products displayed herein are subject to change without notice. DIYI or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify DIYI for any damages resulting from such improper use or sale. 5N65 650V N-Channel Power MOSFET Mar.2015-REV.00 www.dyelec.com