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1 / 7May.2015-REV.00 www.dyelec.com 1. Gate 2. Drain 3. Source Pin Definition: PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) ID (A) 55 8.0@ VGS =10V 110 55V N-Channel Power MOSFET RDS(ON)<8mΩ @ VGS=10V High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Special designed for convertors and power controls Good stability and uniformity with high EAS Excellent package for good heat dissipation Green molding compound Block Diagram

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  • Case: TO-220 Package D G S Part No. Package Packing DMT3205-TU TO-220 50pcs / Tube Application Power switching application Hard switched and High frequency circuits Uninterruptible power supply Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 55 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 110 A Drain Current-Continuous(TC=100℃) ID (100℃) 70 A Pulsed Drain Current IDM 390 A Maximum Power Dissipation PD 200 W Derating factor 1.6 W/℃ Single pulse avalanche energy (Note 5) EAS 910 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 155 ℃

55V N-Channel Power MOSFET May.2015-REV.00 www.dyelec.com Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 0.75 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS GS=0V V ID=250μA 55 - V Zero Gate Voltage Drain Current IDSS - - 1 μA Gate-Body Leakage Current IGSS GS=±V 20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) DS=VV GS,ID=250μA 2 3 4 V Drain-Source On-State Resistance RDS(ON) - - 8 mΩ Dynamic Characteristics (Note4) Input Capacitance Clss - - PF4900 Output Capacitance Coss - - PF470 Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, F=1.0MHz - 460 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - - nS20 Turn-on Rise Time tr - - nS19 Turn-Off Delay Time td(off) - - nS70 Turn-Off Fall Time tf VDD=30V,ID=2A,RL=15Ω , RG=2.5Ω,VGS=10V - 30 - nS Total Gate Charge Qg - - nC125 Gate-Source Charge Qgs - - nC24 Gate-Drain Charge Qgd VDS=30V,ID=30A, VGS=10V - 49 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD GS=0V V,IS=40A - - 1.2 V Diode Forward Current (Note 2) IS - - A110 Reverse Recovery Time trr - 37 nS Reverse Recovery Charge Qrr Tj=25℃,IF= 75A,di/dt=100A/μs (Note3) - 58 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃,VDD=28 V,VG=10V,L=0.5mH,Rg=25Ω DS=V 55V,VGS=0V VGS=10V, ID=62A

TEST CIRCUITS AND WAVEFORMS(Cont.) 55V N-Channel Power MOSFET Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform VDD BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit tp Time Unclamped Inductive Switching Waveforms Jan.2015-REV.00 www.sddydz.com May.2015-REV.00 www.dyelec.com DMT3205

55V N-Channel Power MOSFET May.2015-REV.00 www.dyelec.com DMT3205 TO-220 Mechanical Drawing TO-220 Mechanical Drawing

Specifications of the products displayed herein are subject to change without notice. DIYI or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify DIYI for any damages resulting from such improper use or sale. Mar.2015-REV.00 www.dyelec.com 55V N-Channel Power MOSFET DMT3205