2N60 DYELEC

Document overview

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Technical content

1 / 9May,2015-REV.00 www.dyelec.com 1. Gate 2. Drain 3. Source Pin Definition: PRODUCT SUMMARY VDS (V) RDS(on)(Ω) Current 600 4.4 @ VGS =10V 2A 600V N-Channel Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) RDS(ON) < 4.4Ω@ VGS = 10V, ID =1A Fast switching capability Lead free in compliance with EU RoHS directive. Improved dv/dt capability, high ruggedness Block Diagram

Ordering Information

  • Case: TO-251,TO-252,TO-220,ITO-220 D G S PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 2.0 A Continuous Drain Current ID 2.0 A Pulsed Drain Current (Note 2) IDM 8.0 A Avalanche Energy Single Pulsed (Note 3) EAS 115 mJ Power Dissipation TO-220/TO-262/TO-263 PD 44 W ITO-220 23 W TO-251/TO-252 34 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 2.7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C Part No. Package Packing DMP2N60-TU TO-251 75pcs / Tube DMD2N60-TR TO-252 2.5Kpcs / 13” Reel DMT2N60-TU TO-220 50pcs / Tube DMF2N60-TU ITO-220 50pcs / Tube DMD2N60-TU TO-252 75pcs / Tube DMK2N60-TU TO-262 50pcs / Tube DMG2N60-TU TO-263 DMG2N60-TR TO-263 800pcs / 13" Reel 50pcs / Tube

600V N-Channel Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220/ITO-220 TO-262/TO-263 θJA 62.5 °C/W TO-251/ TO-252 110 Junction to Case θJC 2.35 °C/W ITO-220 5.5 TO-251/ TO-252 2.9 PARAMETER SYMBOL T EST CONDITIONS TYP MIN MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS GSV = 0V, ID = 250μA 600 V Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 10 μA Gate-Source Leakage Current Forward IGSS VGS = 30V, VDS = 0V 100 nA Reverse e -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) DSV = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) 4 4.4 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz pF Output Capacitance COSS pF Reverse Transfer Capacitance CRSS pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 10 - ns Turn-On Rise Time tR ns25 - Turn-Off Delay Time tD(OFF) ns20 - Turn-Off Fall Time tF - ns Total Gate Charge QG VDS= 480V,ID= 2.4A, VGS= 10V (Note 1, 2) 5.7 - nC Gate-Source Charge QGS nC1.8 Gate-Drain Charge QGD nC2 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 2.0 A Maximum Pulsed Drain-Source Diode Forward Current I SM 8.0 A Reverse Recovery Time trr VGS = 0 V, IS = 2A, dIF/dt = 100 A/μs (Note 1) 357 ns Reverse Recovery Charge QRR μC2 Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. .Essentially independent of operating temperature May,2015-REV.00 www.dyelec.com VGS = -30V, VDS = 0V GSV = 10V, ID =1A 300 VDD =300V, ID =2A, RG=25Ω (Note 1, 2) GSV = 0 V, ISD = 2.0 A TO-220/ITO-220 TO-262/TO-263

TEST CIRCUITS AND WAVEFORMS 2N60 600V N-Channel Power MOSFET Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * SD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms May,2015-REV.00 www.dyelec.com

TEST CIRCUITS AND WAVEFORMS(Cont.) 2N60 600V N-Channel Power MOSFET Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform VDD BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit tp Time Unclamped Inductive Switching Waveforms May,2015-REV.00 www.dyelec.com

600V N-Channel Power MOSFET May,2015-REV.00 www.dyelec.com Drain Current vs. Drain-Source Breakdown Voltage Drain Current, ID (µA) Drain-Source Breakdown Voltage, BVDSS (V) 0.50 Drain Current vs. Gate Threshold Voltage Drain Current, ID (µA) Gate Threshold Voltage, VTH (V) 1.5 2 431 100 150 200 250 300 0 200 600 800 1000400 100 150 200 250 300 2.5 3.5 Drain Current, ID (A) Continuous Drain-Source Current, ISD (A)

ITO-220 Mechanical Drawing 2N60 600V N-Channel Power MOSFET May,2015-REV.00 www.dyelec.com

600V N-Channel Power MOSFET 7 / 9 May,2015-REV.00 www.dyelec.com TO-262 Mechanical Drawing TO-263 Mechanical Drawing

600V N-Channel Power MOSFET May,2015-REV.00 www.dyelec.com

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