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POWERDI is a registered trademark of Diodes Incorporated. DMNH6008SPSQ Document number: DS38772 Rev. 1 - 2 1 of 7 www.diodes.com April 2016 © Diodes Incorporated DMNH6008SPSQ 60V 175° C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary BVDSS RDS(ON) ID TA = +25° C 60V 8.0mΩ @ VGS = 10V 16.5A Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC -Q101, supported by a PPAP and is ideal for use in: Motor Control DC-DC Converters Power Management Features and Benefits Thermally Efficient Package-Cooler Running Applications High Conversion Efficiency Low RDS(ON) – Minimizes On State Losses Low Input Capacitance Fast Switching Speed <1.1mm Package Profile – Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Case: PowerDI5060-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) Ordering Information (Note 5) Part Number Case Packaging DMNH6008SPSQ-13 PowerDI5060-8 2,500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information Bottom View Top View Pin Configuration Top View Internal Schematic PowerDI5060-8 Pin1 S D D G D D S S NH6008SS S S S G D D D D YY WW =Manufacturer’s Marking NH6008SS = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 = 2016) WW = Week Code (01 to 52) Green D S G
POWERDI is a registered trademark of Diodes Incorporated. DMNH6008SPSQ Document number: DS38772 Rev. 1 - 2 2 of 7 www.diodes.com April 2016 © Diodes Incorporated DMNH6008SPSQ Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS 20 V Continuous Drain Current (Note 7) VGS = 10V Steady State TA = +25° C TA = +100° C ID 16.5 11.7 A Steady State TC = +25° C TC = +100° C ID 88 63 A Pulsed Drain Current (380μs Pulse, Duty Cycle = 1%) IDM 140 A Maximum Continuous Body Diode Forward Current (Note 7) IS 90 A Avalanche Current (Note 8) L=0.1mH IAS 62 A Avalanche Energy (Note 8) L=0.1mH EAS 194 mJ Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) PD 1.6 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 95 ° C/W Total Power Dissipation (Note 7) PD 3.3 W Thermal Resistance, Junction to Ambient (Note 7) Steady State RJA 46 ° C/W Thermal Resistance, Junction to Case (Note 7) RJC 1.6 Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BVDSS 60 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS — — 1 µA VDS = 48V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = 16V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage VGS(TH) 2 — 4 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) — 6.0 8.0 m VGS = 10V, ID = 20A Diode Forward Voltage VSD — — 1.2 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss — 2597 — pF VDS = 30V, VGS = 0V f = 1.0MHz Output Capacitance Coss — 437 — Reverse Transfer Capacitance Crss — 118 — Gate Resistance Rg — 2.0 — VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 10V) Qg — 40.1 — nC VDD = 30V, ID = 20A Total Gate Charge (VGS = 4.5V) Qg — 21.2 — Gate-Source Charge Qgs — 8.3 — Gate-Drain Charge Qgd — 11.8 — Turn-On Delay Time tD(ON) — 5.7 — ns VDD = 30V, VGS = 10V, Rg = 1, ID = 20A Turn-On Rise Time tR — 5.0 — Turn-Off Delay Time tD(OFF) — 15.6 — Turn-Off Fall Time tF — 3.3 — Reverse Recovery Time tRR — 33 — ns IF = 20A, di/dt = 100A/µs Reverse Recovery Charge QRR — 33 — nC Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. IAS and EAS ratings are based on low frequency and duty cycles to keep T J = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated. DMNH6008SPSQ Document number: DS38772 Rev. 1 - 2 6 of 7 www.diodes.com April 2016 © Diodes Incorporated DMNH6008SPSQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 PowerDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 Θ 10º 12º 11º Θ1 6º 8º 7º All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 Dimensions Value (in mm) C 1.270 G 0.660 G1 0.820 X 0.610 X1 4.100 X2 0.755 X3 4.420 X4 5.610 Y 1.270 Y1 0.600 Y2 1.020 Y3 0.295 Y4 1.825 Y5 3.810 Y6 0.180 Y7 6.610 A L K M G Detail A 0(4X) c e D E Detail A b (8X) e/2 01 (4X) b2 (4X) b3 (4X)E3 X3 Y2 X C Y(4x) G
POWERDI is a registered trademark of Diodes Incorporated. DMNH6008SPSQ Document number: DS38772 Rev. 1 - 2 7 of 7 www.diodes.com April 2016 © Diodes Incorporated DMNH6008SPSQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WA RRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other change s without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products descri bed herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product nam es and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Furth er, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com