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2 manufacturer specifications
The DMN3028LQ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery pro…
Manufacturer Specifications
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| Manufacturer | Series | Package | Documents | Available | Select specification |
|---|---|---|---|---|---|
| Diodes Incorporated | - | - | 1 | PDF HTML | View spec |
| Shanghai Leiditech Elec... | - | - | 1 | PDF HTML | Viewing |
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Summary
30V N-Channel Enhancement Mode MOSFET Rev : 01.07.2021
Description
The DMN3028LQ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
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