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Document number: DS35900 Rev. 3 - 2 1 of 8 www.diodes.com February 2020 © Diodes Incorporated DMN3016LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) max ID max TA = +25° C 30V 12mΩ @ VGS = 10V 10A 16mΩ @ VGS = 4.5V 8.5A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Battery Management Application Power Management Functions DC-DC Converters Features and Benefits 0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0065 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMN3016LFDE-7 U-DFN2020-6 (Type E) 3,000/Tape & Reel DMN3016LFDE-13 U-DFN2020-6 (Type E) 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Bottom View Pin Out Internal Schematic U-DFN2020-6 (Type E) D D D D S S G 34 D S G
Document number: DS35900 Rev. 3 - 2 2 of 8 www.diodes.com February 2020 © Diodes Incorporated DMN3016LFDE Marking Information Site 1 Date Code Key Year 2012 … 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Code Z … H I J K L M N O P R Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Site 2 Date Code Key Year 2012 … 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Code 2 … 0 1 2 3 4 5 6 7 8 9 Week 1-26 27-52 53 Code A-Z a-z z Internal Code Sun Mon Tue Wed Thu Fri Sat Code T U V W X Y Z NR = Product Type Marking Code YM = Date Code Marking Y = Year (ex: H = 2020) M = Month (ex: 9 = September) NR = Product Type Marking Code YWX = Date Code Marking Y = Year (ex: 0 = 2020) W = Week (ex: a = Week 27; z Represents Week 52 and 53) X = Internal Code (ex: U = Monday) NR YWX
Document number: DS35900 Rev. 3 - 2 3 of 8 www.diodes.com February 2020 © Diodes Incorporated DMN3016LFDE Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 10 8 A t<10s TA = +25°C TA = +70°C ID 12 9 A Maximum Continuous Body Diode Forward Current (Note 6) IS 2.5 A Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) IDM 90 A Avalanche Current (Note 7) L = 0.1mH IAS 22 A Avalanche Energy (Note 7) L = 0.1mH EAS 24 mJ Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25° C PD 0.73 W TA = +70° C 0.47 Thermal Resistance, Junction to Ambient (Note 5) Steady State RJA 171 ° C/W t<10s 121 Total Power Dissipation (Note 6) TA = +25° C PD 2.02 W TA = +70° C 1.30 Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 62 ° C/W t<10s 42 Thermal Resistance, Junction to Case (Note 6) Steady State RJC 9.3 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 1 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 1.4 — 2.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 8 12 mΩ VGS = 10V, ID = 11A — 12 16 VGS = 4.5V, ID = 9A Forward Transfer Admittance |Yfs| — 32 — S VDS = 5V, ID = 12A Diode Forward Voltage VSD — 0.70 1.0 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 1415 — pF VDS = 15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 119 — Reverse Transfer Capacitance Crss — 82 — Gate Resistance Rg — 2.6 3.2 Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 4.5V) Qg — 11.3 — nC VDS = 15V, ID = 12A Total Gate Charge (VGS = 10V) Qg — 25.1 — Gate-Source Charge Qgs — 3.5 — Gate-Drain Charge Qgd — 3.6 — Turn-On Delay Time tD(ON) — 4.8 — ns VDD = 15V, VGS = 10V, RL = 1.25Ω, RG = 3Ω Turn-On Rise Time tR — 16.5 — Turn-Off Delay Time tD(OFF) — 26.1 — Turn-Off Fall Time tF — 5.6 — Reverse Recovery Time tRR — 12.3 — ns IF = 12A, di/dt = 500A/μs Reverse Recovery Charge QRR — 10.4 — nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout . 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep T J = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing.
Document number: DS35900 Rev. 3 - 2 4 of 8 www.diodes.com February 2020 © Diodes Incorporated DMN3016LFDE 0 0.5 1.0 1.5 2.0 V , DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics DS I , DRAIN CURRENT (A)D V = 2.5VGS V = 3.0VGS V = 3.5VGS V = 4.0VGS V = 4.5VGS V = 10VGS 0 1 2 3 4 V , GATE-SOURCE VOLTAGE (V)GS Fig. 2 Typical Transfer Characteristics I , DRAIN CURRENT (A)D T = 150 CA T = 125 CA T = 85 CA T = 25 CA T = -55 CA V = 5.0VDS 0.01 0.02 0.03 0.04 0 5 10 15 20 25 30 I , DRAIN SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage D R ,DRAIN-SOURCE ON-RESISTANCE( )DS(ON) 0.01 0.02 0.03 0.04 0 5 10 15 20 25 30 I , DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature D R , DRAIN-SOURCE ON-RESISTANCE( )DS(ON) V = 4.5VGS T = -55 CA T = 25 CA T = 85 CA T = 125 CA T = 150 CA -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J Fig. 5 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE DS(ON) (NORMALIZED) -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J Fig. 6 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) V = 10V I = A GS D V = .5V I = A GS D
Document number: DS35900 Rev. 3 - 2 5 of 8 www.diodes.com February 2020 © Diodes Incorporated DMN3016LFDE -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE ( 癈) Fig. 7 Gate Threshold Variation vs. Ambient Temperature A V , GATE THRESHOLD VOLTAGE(V)GS(TH) V , SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current SD I , SOURCE CURRENT (A)S 200 400 600 800 1,000 1,200 1,400 1,600 1,800 2,000 0 5 10 15 20 25 30 V , DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance DS C , JUNCTION CAPACITANCE (pF)T Coss Crss Ciss f = 1MHz 0 5 10 15 20 25 30 Q , TOTAL GATE CHARGE (nC) Fig. 10 Gate-Charge Characteristics g f = 1MHz 10V , GATE-SOURCE VOLTAGE (V)GS 100 t1, PULSE DURATION TIME (sec) Fig. 11 Single Pulse Maximum Power Dissipation 0.001 0.01 0.1 1 10 100 1,0000.0001P , PEAK TRANSIENT POIWER (W)(PK) Single Pulse R = 61 C/W R = r * R T - T = P * R JA JA(t) (t) JA J A JA(t) TA, AMBIENT TEMPERATURE (° C)
Document number: DS35900 Rev. 3 - 2 6 of 8 www.diodes.com February 2020 © Diodes Incorporated DMN3016LFDE t1, PULSE DURATION TIMES (sec) Fig. 12 Transient Thermal Resistance 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE R (t)=r(t) * RJA JA R =61 癈/W Duty Cycle, D=t1/ t2 JA D = 0.7 D = 0.9 D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 Single Pulse RθJA(t) = r(t) * RθJA RθJA = 61℃/W Duty Cycle, D = t1 / t2 t1, PULSE DURATION TIME (sec) Fig. 12 Transient Thermal Resistance
Document number: DS35900 Rev. 3 - 2 7 of 8 www.diodes.com February 2020 © Diodes Incorporated DMN3016LFDE Package Outline Dimension Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type E) Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type E) D E e b(6X) L(2X) A A3A1 Z(4X) X(6x) C X2 Y1Y2 Y (2x) U-DFN2020-6 Type E Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 0.15 b 0.25 0.35 0.30 b1 0.185 0.285 0.235 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 E 1.95 2.05 2.00 E2 1.40 1.60 1.50 e 0.65 L 0.25 0.35 0.30 L1 0.82 0.92 0.87 K1 0.305 K2 0.225 Z 0.20 All Dimensions in mm Dimensions Value (in mm) C 0.650 X 0.400 X1 0.285 X2 1.050 Y 0.500 Y1 0.920 Y2 1.600 Y3 2.300
Document number: DS35900 Rev. 3 - 2 8 of 8 www.diodes.com February 2020 © Diodes Incorporated DMN3016LFDE IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of th is document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product name s and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the ex press written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incor porated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2020, Diodes Incorporated www.diodes.com