10N60 DYELEC

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Technical content

1 / 9May.2015-REV.00 www.dyelec.com 1. Gate 2. Drain 3. Source Pin Definition: PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 0.9 @ VGS =10V 10 600V N-Channel Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) RDS(ON)<0.9Ω @ VGS=10V Fast switching capability Low gate charge Lead free in compliance with EU RoHS directive. Green molding compound Block Diagram

Ordering Information

  • Case: TO-220,ITO-220,TO-262,TO-263 Package D G S PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 10 A Pulsed Drain Current (Note 2) IDM 38 A Avalanche Energy Single Pulsed (Note 3) EAS 700 mJ Power Dissipation TO-220/TO-262/TO-263 PD 156 W ITO-220 50 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 30mH, IAS = 6.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C Part No. Package Packing DMT10N60-TU TO-220 50pcs / Tube DMF10N60-TU ITO-220 50pcs / Tube DMK10N60-TU TO-262 50pcs / Tube DMG10N60-TU TO-263 50pcs / Tube DMG10N60-TR TO-263 800pcs / 13" Reel

600V N-Channel Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220/ITO-220 TO-262/TO-263 θJA 62.5 °C/W Junction to Case TO-220 θJC 0.85 °C/W ITO-220 2.6 PARAMETER SYMBOL T EST CONDITIONS TYP MIN MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS GSV =0V, ID=250μA 600 V Drain-Source Leakage Current IDSS Gate- Source Leakage Current Forward IGSS VG=30V, VDS=0V 100 nA Reverse VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) DSV =VGS, ID=250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) 0.76 0.9 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS =0V, f=1.0 MHz 1570 pF Output Capacitance COSS pF166 Reverse Transfer Capacitance CRSS 18 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 23 ns Turn-On Rise Time tR ns69 Turn-Off Delay Time tD(OFF) 144 ns Turn-Off Fall Time tF 77 ns Total Gate Charge QG 44 nC Gate-Source Charge QGS nC6.7 Gate-Drain Charge QGD 18.5 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 10 A Maximum Pulsed Drain-Source Diode Forward Current I SM 40 A Reverse Recovery Time trr VGS=0V, IS=10A, dIF/dt =100 A/μs (Note 1) 450 ns Reverse Recovery Charge QRR μC4.2 Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. May.2015-REV.00 www.dyelec.com VDD =300V, ID =10A, RG =25Ω (Note 1, 2) VDS=480V, ID=10A, VGS=10V (Note 1, 2) VDS=600V, VGS=0V 1 µA 9*S=10V, ID=5A GSV =0 V, IS =10A

TEST CIRCUITS AND WAVEFORMS 600V N-Channel Power MOSFET Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * SD controlled by pulse period * D.U.T.-D vice Under Test Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms May.2015-REV.00 www.dyelec.com 10N60

TEST CIRCUITS AND WAVEFORMS(Cont.) 600V N-Channel Power MOSFET Jan.2015-REV.00 www.sddydz.com May.2015-REV.00 www.dyelec.com 10N60 VDS 90% 10% VGS tD(ON) tR tD(OFF) tF Switching Test Circuit Switching Waveforms 10V Charge QGS QGD QG VGS Gate Charge Test Circuit Gate Charge Waveform VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

600V N-Channel Power MOSFET May.2015-REV.00 www.dyelec.com 10N60 Gate-Source Voltage, VCG (V) Capacitance, (pF)

600V N-Channel Power MOSFET 10N60 6 / 9 May.2015-REV.00 www.dyelec.com Drain Current, ID (A) Drain Current, ID (A) PDW Single pulse D=0.5 0.2 0.1 0.05 0.02 0.01 NOTES: 1.ZθJC(t)=2.5D/W Max 2.Duty Factor,D=t1/t2 3.TJW-TC=PDW-ZθJC(t) Square Wave Pulse Duration, t1 (sec) 10-5 10-4 10-3 10-2 10-1 100 101 10-2 10-1 100 Transient Thermal Response Curve

600V N-Channel Power MOSFET May.2015-REV.00 www.dyelec.com 10N60 TO-220 Mechanical Drawing TO-220 Mechanical Drawing ITO-220 Mechanical Drawing

600V N-Channel Power MOSFET 8 / 9 Apr,2015-REV.00 www.dyelec.com TO-262 Mechanical Drawing TO-263 Mechanical Drawing

Specifications of the products displayed herein are subject to change without notice. DIYI or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify DIYI for any damages resulting from such improper use or sale. 600V N-Channel Power MOSFET Apr.2015-REV.00 www.dyelec.com 10N60