7N70 DYELEC

Document overview

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Technical content

1 / 7May.2015-REV.00 www.dyelec.com 1. Gate 2. Drain 3. Source Pin Definition: PRODUCT SUMMARY VDS (V) Current(A) 700 RDS(on)(Ω) 1.6 @ VGS =10V 7 700V N-Channel Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) RDS(ON), VGS@10V,ID@3.5A<1.6Ω Fast switching capability Low gate charge Lead free in compliance with EU RoHS directive. Green molding compound Block Diagram

Ordering Information

  • Case: TO-220,ITO-220,TO-262,TO-263 Package D G S PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 7 A Pulsed Drain Current IDM 28 A EAS 530 mJ Power Dissipation TO-220/TO-262/TO-263 PD 142 W ITO-220 45 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Part No. Package Packing DMT7N70-TU TO-220 50pcs / Tube DMF7N70-TU ITO-220 50pcs / Tube NOTES : 1. L=19.5mH, IAS=7A, VDD=50V, RG=25ohm, Starting TJ=25oC 2. Pulse width<300us, Duty cycle<2% 3. Essentially independent of operating temperature typical characteristics. 4. Guaranteed by design, not subject to production testing Single Pulse Avalanche Energy (Note 1) DMK7N70-TU TO-262 50pcs / Tube DMG7N70-TU TO-263 50pcs / Tube DMG7N70-TR TO-263 800pcs / 13" Reel

700V N-Channel Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220/TO-262/TO-263 ITO-220 θJA 62.5 °C/W Junction to Case TO-220/TO-262/TO-263 θJC 0.9 °C/W ITO-220 2.6 May.2015-REV.00 www.dyelec.com PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BVDSS V GS=0V,ID=250uA 7 00 - - V Gate Threshold Voltage VGS(th) V DS=VGS,ID=250uA 2 4 V Drain-Source On-State Resistance R DS(on) VGS=10V,ID=3.5A - 1.4 1.6 Ω Zero Gate Voltage Drain Current I DSS V DS=700V,VGS=0V - 1.0 uA Gate-Source Leakage Current I GSS VGS=+30V,VDS=0V - +100 nA Diode Forward Voltage VSD IS=7A,VGS=0V - 1.4 V Dynamic (Note 4) Total Gate Charge Qg VDS=100V, ID=7A, VGS=10V (Note 2,3) - 163 - nC Gate-Source Charge Qgs - 12 - Gate-Drain Charge Qgd - 30 - Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHZ - 1200 1600 pF Output Capacitance Coss - 150 190 Reverse Transfer Capacitance Crss - 60 80 Turn-On Delay Time td(on) VDD=30V, ID=1A, RG=25Ω (Note 2,3) - 60 80 ns Turn-On Rise Time tr - 200 230 Turn-Off Delay Time td(off) - 280 350 Turn-Off Fall Time tf - 250 300 Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current IS --- - - 6 A Maximum Pulsed Drain-Source Diode Forward Current ISM --- - - 24 A Reverse Recovery Time trr VGS=0V, IS=7A dIF/ dt=100A/us (Note 2) - 320 - ns Reverse Recovery Charge Qrr - 2.4 - uC

700V N-Channel Power MOSFET May.2015-REV.00 www.dyelec.com 7N70

700V N-Channel Power MOSFET 7N70 4 / 7 May.2015-REV.00 www.dyelec.com TYPICAL CHARACTERISTICS 0.1 0.2 Source-Drain Voltage, VSD (V) Reverse Drain Current, IDR (A) On State Current vs. Allowable Case Temperature 150℃ 25℃ Notes: 1. 1.GS=0V 2. 250µs Test Notes: 1. θJC (t) = 0.88℃/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×θJC (t) Thermal Response, θJC (t) 1 0.1 0.01 1E-5 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration, t1 (sec) Transient Thermal Response Curve

700V N-Channel Power MOSFET May.2015-REV.00 www.dyelec.com 7N70 TO-220 Mechanical Drawing TO-220 Mechanical Drawing ITO-220 Mechanical Drawing

700V N-Channel Power MOSFET 6 / 7 May,2015-REV.00 www.dyelec.com TO-262 Mechanical Drawing TO-263 Mechanical Drawing

Specifications of the products displayed herein are subject to change without notice. DIYI or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify DIYI for any damages resulting from such improper use or sale. 700V N-Channel Power MOSFET May.2015-REV.00 www.dyelec.com 7N70