3N60 DYELEC

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Technical content

1 / 8May,2015-REV.00 www.dyelec.com 1. Gate 2. Drain 3. Source Pin Definition: PRODUCT SUMMARY VDS (V) RDS(on)(Ω) Current 600 3.6 @ VGS =10V 3A 600V N-Channel Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) RDS(ON) < 3.6Ω@ VGS = 10V, ID =1.5A Fast switching capability Lead free in compliance with EU RoHS directive. Improved dv/dt capability, high ruggedness

Ordering Information

  • Case: TO-251,TO-252,TO-220,ITO-220 PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 3.0 A Continuous Drain Current ID 3.0 A Pulsed Drain Current (Note 2) IDM 12 A Avalanche Energy Single Pulsed (Note 3) EAS 200 mJ Power Dissipation TO-220/TO-262/TO-263 PD 75 W ITO-220 34 W TO-251/TO-252 50 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L = 44.4mH, IAS=3A, VDD=50V, RG=25 Ω, Starting TJ = 25°C Part No. Package Packing DMP3N60-TU TO-251 75pcs / Tube DMD3N60-TR TO-252 2.5Kpcs / 13” Reel DMT3N60-TU TO-220 50pcs / Tube DMF3N60-TU ITO-220 50pcs / Tube DMD3N60-TU TO-252 75pcs / Tube Block Diagram D G SDMG3N60-TU TO-263 50pcs / Tube DMG3N60-TU TO-263 800pcs / 13" Reel DMK3N60-TU TO-262 50pcs / Tube

600V N-Channel Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220/ITO-220 TO-262/TO-263 θJA 62.5 °C/W TO-251/ TO-252 110 Junction to Case TO-220/TO-262/TO-263 θJC 1.70 °C/W ITO-220 3.70 TO-251/ TO-252 2.6 PARAMETER SYMBOL T EST CONDITIONS TYP MIN MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS GSV = 0V, ID = 250μA 600 V Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 10 μA Gate-Source Leakage Current Forward IGSS VGS = 30V, VDS = 0V 100 nA Reverse e -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) DSV = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) 3.6 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz pF Output Capacitance COSS pF Reverse Transfer Capacitance CRSS pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 35 50 ns Turn-On Rise Time tR ns60 70 Turn-Off Delay Time tD(OFF) ns100 150 Turn-Off Fall Time tF 75 ns Total Gate Charge QG 18.5 23 nC Gate-Source Charge QGS nC5.2 Gate-Drain Charge QGD nC4.9 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 3.0 A Maximum Pulsed Drain-Source Diode Forward Current I SM 12 A Reverse Recovery Time trr VGS = 0 V, IS = 3A, dIF/dt = 100 A/μs (Note 1) 210 ns Reverse Recovery Charge QRR μC1.2 Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. .Essentially independent of operating temperature May,2015-REV.00 www.dyelec.com VGS = -30V, VDS = 0V 350 5.5 450 7.5 VDD =30V, ID =0.5A, RG=25Ω (Note 1, VGS=10 V, ID=1.5A VDS=50V, ID=1.3 A, IG=100μA VGS=10V (Note 1, 2) - GSV =0 V, IS=3.0A

600V N-Channel Power MOSFET May,2015-REV.00 www.dyelec.com Drain-Source On-Resistance, RDS(ON) (Ω) Drain Current, ID (A) On-Resistance Variation vs. Drain Current and Gate Voltage 6 8 10 12 0.1 0.2 Source-Drain Voltage, VSD (V) Reverse Drain Current, IDR (A) On State Current vs. Allowable Case Temperature Note: : J=25℃ Notes: 1. VGS=0V 2. 250µs Test VGS=20V VGS=10V

600V N-Channel Power MOSFET May,2015-REV.00 www.dyelec.com TYPICAL CHARACTERISTICS Drain-Source Breakdown Voltage, BVDSS (Normalized) Drain-Source On-Resistance, RDS(ON) (Normalized) Square Wave Pulse Duration, t1 (sec) Transient Thermal Response Curve Case Temperature, TC (°C) 75 100 12550 25 1.0 1.5 2.0 2.5 3.0 Maximum Drain Current vs. Case Temperature 0.5 150 0.1 0.01 10-5 10-4 10-3 10-2 10-1 100 101 Notes: 1. θJC (t) = 1.18 /W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×θJC (t) D=0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse 100 10-1 10-2 Drain-Source Voltage, VDS (V) 102101100 103 Safe Operating Area – 600V Notes: 1. TJ=25 2. TJ=150 3. Single Pulse DC 10ms 1ms 100µs Operation in This Area is Limited by RDS(on) 101 600

ITO-220 Mechanical Drawing 3N60 600V N-Channel Power MOSFET May,2015-REV.00 www.dyelec.com

600V N-Channel Power MOSFET 6 / 8 May,2015-REV.00 www.dyelec.com TO-262 Mechanical Drawing TO-263 Mechanical Drawing

600V N-Channel Power MOSFET May,2015-REV.00 www.dyelec.com

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