DMF8N60-TU

8N60 DYELEC

Document overview

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Technical content

1 / 9May.2015-REV.00 www.dyelec.com 1. Gate 2. Drain 3. Source Pin Definition: PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 1.2 @ VGS =10V 8 600V N-Channel Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) RDS(ON)<1.2Ω @ VGS=10V Fast switching capability Low gate charge Lead free in compliance with EU RoHS directive. Green molding compound Block Diagram

Ordering Information

• Case: TO-220,ITO-220,TO-262,TO-263 Package D G S PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 8 A Continuous Drain Current ID 8 A Pulsed Drain Current (Note 2) IDM 32 A Avalanche Energy Single Pulsed (Note 3) E AS 230 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 ns Power Dissipation TO-220/TO-262/TO-263 PD 142 W ITO-220 48 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 7.1mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 7.5A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C Part No. Package Packing DMT8N60-TU TO-220 50pcs / Tube DMF8N60-TU ITO-220 50pcs / Tube DMK8N60-TU TO-262 50pcs / Tube DMG8N60-TU TO-263 50pcs / Tube DMG8N60-TR TO-263 800pcs / 13" Reel

600V N-Channel Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220/ITO-220 TO-262/TO-263 θJA 62.5 °C/W Junction to Case TO-220/TO-262/TO-263 θJC 0.85 °C/W ITO-220 2.6 PARAMETER SYMBOL T EST CONDITIONS TYP MIN MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS GSV =0V, ID=250μA 600 V Drain-Source Leakage Current IDSS VDS=600V, VGS=0V 10 μA Gate- Source Leakage Current Forward IGSS VG=30V, VDS=0V 100 nA Reverse VGS=-30V, VDS=0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) DSV =VGS, ID=250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) 1.0 1.2 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS =0V, f=1.0 MHz 965 1255 pF Output Capacitance COSS pF105 135 Reverse Transfer Capacitance CRSS 12 16 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 16.5 45 ns Turn-On Rise Time tR ns60.5 130 Turn-Off Delay Time tD(OFF) 81 170 ns Turn-Off Fall Time tF 64.5 140 ns Total Gate Charge QG 28 36 nC Gate-Source Charge QGS nC4.5 Gate-Drain Charge QGD 12 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 8 A Maximum Pulsed Drain-Source Diode Forward Current I SM 32 A Reverse Recovery Time trr VGS=0V, IS=8A, dIF/dt =100 A/μs (Note 1) 365 ns Reverse Recovery Charge QRR μC3.4 Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. May.2015-REV.00 www.dyelec.com VDD =300V, ID =8A, RG =25Ω (Note 1, 2) VDS=480V, ID=8A, VGS=10V (Note 1, 2) GSV = 10V, ID = 4A GSV = 0V, IS = 8A

TEST CIRCUITS AND WAVEFORMS 600V N-Channel Power MOSFET Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * SD controlled by pulse period * D.U.T.-D vice Under Test Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms May.2015-REV.00 www.dyelec.com 8N60

TEST CIRCUITS AND WAVEFORMS(Cont.) 600V N-Channel Power MOSFET Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform VDD BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit tp Time Unclamped Inductive Switching Waveforms Jan.2015-REV.00 www.sddydz.com May.2015-REV.00 www.dyelec.com 8N60

600V N-Channel Power MOSFET May.2015-REV.00 www.dyelec.com 8N60 100.1 1 Drain-to-Source Voltage, VDS (V) Drain Current, ID (A) On-State Characteristics 0.1 Gate-Source Voltage, VGS (V) Drain Current, ID (A) Transfer Characteristics 64 8 1 0 0.1 5.0V Notes: 1. 250µs Pulse e est 2. T C=25°C VGS Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5 V Bottorm:5.0V 100 Notes: 1. . DS=40V 2. 250µs Pulse Test 25°C 150°C Drain-Source On-Resistance, RDS(ON) (ohm) Drain Current, ID (A) On-Resistance Variation vs. Drain 10 15 20 0.1 0.2 Source-Drain Voltage, VSD (V) Reverse Drain Current, IDR (A) Body Diode Forward Voltage vs. Source Current 150°C 25°C Notes: 1. VGS=0V 2. 250µs s T st VGS=20V VGS=10V Current and Gate Voltage TJ=25°C 1900 0.1 Drain-SourceVoltage, VDS (V) Capacitance (pF) 1700 500 11 0 1500 1300 Capacitance Characteristics (Non-Repetitive) Gate-Source Voltage, VGS (V) Total Gate Charge, QG (nC) 5 15 25 VDS=120V VDS=300V VDS=480V Gate Charge Characteristics 700 Ciss Coss Crss Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd Notes: 1. . GS=0V 2. f = 1MHz 1100 900 300 100 ID=8A

600V N-Channel Power MOSFET 8N60 6 / 9 May.2015-REV.00 www.dyelec.com -100 Drain-Source Breakdown Voltage, BVDSS (Normalized) Junction Temperature, TJ (°C) -50 50 200100 150 1.2 1.1 1.0 0.9 0.8 Note: 1. . GS=0V 2. .D=250µA Breakdown Voltage Variation vs. Temperature -100 Drain-Source On-Resistance, RDS(ON) (Normalized) Junction Temperature, TJ (°C) -50 50 200100 150 3.0 2.0 1.0 0.5 0.0 1.5 2.5 On-Resistance Junction Temperature Note: 1. . GS=10V 2. .D=4A 0.1 Drain-Source Voltage, VDS (V) Drain Current, ID (A) 100101 100µs 1000 10msDC Maximum Safe Operating Area Drain Current, ID (A) Case Temperature, TC (°C) 75 100 12550 25 Maximum Drain Current vs. Case Temperature Notes: 1. T J=25°C 2. . J=150°C 3. Single e Pulse 150 Operation in This Area is Limited by RDS(on) 100 1ms 100µs Thermal Response, θJC (t) 0.1 0.01 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) Transient Thermal Response Curve Notes: 1. θJC (t) ) 0.85°C/W Max. 2. Duty Factor, D=t1/t2 3. T JM-TC=PDM×θJC (t) D=0.5 D=0.2 D=0.1 D=0.05 0.02 0.01 Single ngle e

600V N-Channel Power MOSFET May.2015-REV.00 www.dyelec.com 8N60 TO-220 Mechanical Drawing TO-220 Mechanical Drawing ITO-220 Mechanical Drawing

600V N-Channel Power MOSFET 8 / 9 May,2015-REV.00 www.dyelec.com TO-262 Mechanical Drawing TO-263 Mechanical Drawing

Specifications of the products displayed herein are subject to change without notice. DIYI or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify DIYI for any damages resulting from such improper use or sale. 600V N-Channel Power MOSFET Mar.2015-REV.00 www.dyelec.com 8N60