15N10 DYELEC

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Technical content

1 / 8May,2015-REV.00 www.dyelec.com 1. Gate 2. Drain 3. Source Pin Definition: PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) ID (A) 100 110@ VGS =10V 15 100V N-Channel Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) RDS(ON)<110mΩ @ VGS=10V Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Lead free in compliance with EU RoHS directive. Green molding compound

Ordering Information

  • Case: TO-252 Part No. Package Packing DMD15N10-TR TO-252 2.5Kpcs / 13” Reel Block Diagram D G S THERMAL DATA DMD15N10-TU TO-252 75pcs / Tube Parameter Symbol Ratings Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current1 ID @T C =25℃ 15.0 A Continuous Drain Current1 ID @T C =70℃ 13.8 A Pulsed Drain Current2 IDM 24 A Total Power Dissipation4 PD @T C =25℃ 34.7 W Total Power Dissipation PD @T A=25℃ 2 W Single Pulse Avalanche Energy3 EAS 8 mJ Avalanche Current IAS 11 A Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 ℃ Parameter Symbol Max. Value Unit Thermal Resistance Junction-ambient1 R θJA 62.5 ℃/ W Thermal Resistance Junction-case1 R θJC 3.6 ℃/W

100V N-Channel Power MOSFET May.2015-REV.00 www.dyelec.com ELECTRICAL CHARACTERISTICS (Tj = 25℃ unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS 100 - - V VGS =0, ID =250uA Gate Threshold Voltage VGS(th) 1.0 - 2.5 V VDS = VG S , ID =250uA Gate-Source Leakage Current IGSS - - ±100 nA VGS = ± 20V Drain-Source Leakage Current IDSS - - 1.0 uA VDS =80 V, VGS =0 - - 110 VGS =10V, ID =8A Static Drain-Source On-Resistance2 R DS(ON) - - 120 m Ω VGS =4. 5V, ID =8A Total Gate Charge2 Q g 26.2 Gate-Source Charge Q gs 4.6 Gate-Drain (“Miller”) Change Q gd 5.1 nC ID =10A VDS =80V VGS =10V Turn-on Delay Time2 Td(on) - 4.2 - Rise Time Tr - 8.2 - Turn-off Delay Time Td(off) - 35. 6 - Fall Time Tf - 9.6 - ns VDS =50V ID =10A VGS =10V R G =3.3Ω Input Capacitance C iss - 153 5 - Output Capacitance C oss - 60 - Reverse Transfer Capacitance C rss - 37 - pF VGS =0V VDS =15V f=1.0 MHz Gate Resistance R g - 2 - Ω f=1 .0MHz Guaranteed Avalanche Characteristics Parameter Symbol Min. Typ. Max. Unit Test Conditions Single Pulse Avalanche Energy5 EAS 1.25 - - mJ VDD =25V, L=0.1mH, IAS =5A Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Continuous Source Current1,6 IS - - 1 5 A Pulsed Source Current2,6 ISM - - 2 4 A VG =V D =0V, Force Current Forward On Voltage2 VSD - - 1 .2 V VGS =0V, IS=8A , TJ=25℃ Reverse Recovery Time trr - 37 - ns Reverse Recovery Charge Q rr - 27. 3 - nC IF=10A, dI/dt=100A/µs, TJ=25℃ Notes: 1. The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper, ≦10sec , 125℃/W at steady state. 2. The data tested by pulsed, pulse width ≦ 300us, duty cycle ≦ 2%. 4. The power dissipation is limited by 150℃ junction temperature. 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.

TEST CIRCUITS AND WAVEFORMS 15N10 100V N-Channel Power MOSFET Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * SD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms May,2015-REV.00 www.dyelec.com

TEST CIRCUITS AND WAVEFORMS(Cont.) 15N10 100V N-Channel Power MOSFET Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform VDD BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit tp Time Unclamped Inductive Switching Waveforms May,2015-REV.00 www.dyelec.com

100V N-Channel Power MOSFET May,2015-REV.00 www.dyelec.com Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Normalized VGS(th) vs. TJ Fig.4 Normalized RDSON vs. TJ Fig.5 Safe Operating Area Fig.6 Forward Characteristics of Reverse

100V N-Channel Power MOSFET TYPICAL CHARACTERISTICS(Cont.) 6 / 8 May,2015-REV.00 www.dyelec.com Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristic Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform

100V N-Channel Power MOSFET May,2015-REV.00 www.dyelec.com Millimeter REF. Min. Max. A 6.40 6.80 B 5.13 5.53 C 6.80 7.25 D 2.90 3.30 E 2.39 G 0.45 0.85 H 2.20 2.40 J 0.41 0.61 K 0 0.15 L 1.40 1.85 M 5.90 6.30 R 0.60 1.20 2.19

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