DMBTA05 DCCOM
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
DC COMPONENTS CO., LTD. TECHNICAL SPECIFICA TIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications. Pinning 1 = Base 2 = Emitter 3 = Collector .091(2.30) .067(1.70) SOT-23 Dimensions in inches and (millimeters) .063(1.60) .055(1.40) .108(0.65) .034(0.85) .118(3.00) .110(2.80) .020(0.50) .012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30) .035(0.90) .026(0.65) .010(0.25) Max .027(0.67) .013(0.32) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 4 V Collector Current IC 500 mA Total Power Dissipation PD 225 mW Junction Temperature TJ +150 oC Storage Temperature TSTG -55 to +150 oC Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 60 - - V IC=100µA Collector-Emitter Breakdown Voltage BVCEO 60 - - V IC=1mA Emitter-Base Breakdown Volatge BVEBO 4 - - V IE=100µA Collector Cutoff Current ICBO - - 100 nA VCB=60V ICEO - - 100 nA VCE=60V Collector-Emitter Saturation Voltage(1) VCE(sat) - - 0.25 V IC=100mA, IB=10mA Base-Emitter On Voltage VBE(on) - - 1.2 V IC=100mA, VCE=1V DC Current Gain(1) hFE1 80 - 250 - IC=10mA, VCE=1V hFE2 50 - - - IC=100mA, VCE=1V Transition Frequency fT 100 - - MHz IC=10mA, VCE=2V, f=100MHz
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%