DMBT1015 DCCOM
Document overview
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Technical content
DC COMPONENTS CO., LTD. TECHNICAL SPECIFICA TIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in driver stage of AF amplifier and general purpose amplification. Pinning 1 = Base 2 = Emitter 3 = Collector .091(2.30) .067(1.70) SOT-23 Dimensions in inches and (millimeters) .063(1.60) .055(1.40) .108(0.65) .034(0.85) .118(3.00) .110(2.80) .020(0.50) .012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30) .035(0.90) .026(0.65) .010(0.25) Max .027(0.67) .013(0.32) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -150 mA Total Power Dissipation PD 225 mW Junction Temperature TJ +150 oC Storage Temperature TSTG -55 to +150 oC Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Voltage BVCBO -50 - - V IC=-100µA Collector-Emitter Breakdown Voltage BVCEO -50 - - V IC=-1mA Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-10µA Collector Cutoff Current ICBO - - -100 nA VCB=-50V Emitter Cutoff Current IEBO - - -100 nA VEB=-5V Collector-Emitter Saturation Voltage(1) VCE(sat) - - -0.3 V IC=-100mA, IB=-10mA Base-Emitter Saturation Voltage(1) VBE(sat) - - -1.1 V IC=-100mA, IB=-10mA DC Current Gain(1) hFE1 120 - 700 - IC=-2mA, VCE=-6V hFE2 25 - - - IC=-150mA, VCE=-6V Transition Frequency fT 80 - - MHz IC=-1mA, VCE=-10V, f=100MHz Output Capacitance Cob - - 7 pF VCB=-10V, f=1MHz, IE=0
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Rank Y G B Range 120~240 200~400 350~700 Classification of hFE1