DG2015_V01 VISHAY
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
Document Number: 71971 S13-1282-Rev. D, 27-May-13 www.vishay.com This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Low-Voltage, Low RON, Dual DPDT Analog Switch
DESCRIPTION
The DG2015 is a dual double-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed, low on-resistance and small physical size, the DG2015 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG2015 is built on Vishay Siliconix’s low voltage JI2 process. An epitaxial layer pr events latchup. Break-before- make is guaranteed. The switch conducts equally well in both directions when on, and blocks up to the power supply level when off.
FEATURES
Low Voltage Operation (2.7 V to 3.3 V) Low On-Resistance - R ON: 0.85 3 dB Loss at 100 MHz Fast Switching: t ON = 40 ns tOFF = 35 ns QFN-16 Package
- Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS Reduced Power Consumption High Accuracy Reduced Board Space Reduce Board Space TTL/1.8 V Logic Compatible
APPLICATIONS
Cellular Phones Speaker Headset Switching Audio and Video Signal Routing PCMCIA Cards Battery Operated Systems FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION INA NO4 NC2 NO2 NO3 INB NO1 NC41 4 9 5678 16 15 14 13 COM2 V+ COM3 NC3 NC1 COM1 GND COM4 Top View DG2015 QFN-16 (4 x 4) TRUTH TABLE Logic NC1, 2, 3 and 4 NO1, 2, 3 and 4 0O N O F F 1O F F O N
ORDERING INFORMATION
Temp Range Package Part Number - 40 °C to 85 °C 16-pin QFN (4 mm x 4 mm) (Variation 1) DG2015DN-T1-E4
www.vishay.com Document Number: 71971 S13-1282-Rev. D, 27-May-13 Vishay Siliconix DG2015 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 23.5 mW/°C above 70 °C. d. Manual soldering with iron is not recommended for leadless com ponents. The QFN is a leadless package. The end of the lead te rminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Limit Unit Reference V+ to GND - 0.3 to + 6 V IN, COM, NC, NOa - 0.3 to (V+ + 0.3) Current (Any terminal except NO, NC or COM) 30 mAContinuous Current (NO, NC, or COM) ± 150 Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 200 Storage Temperature (D Suffix) - 65 to 150 Package Solder Reflow Conditions d 16-pin QFN (4 mm x 4 mm) 240 Power Dissipation (Packages)b QFN-16c 1880 mW SPECIFICATIONS (V+ = 3 V) Test Conditions Otherwise Unless Specified V+ = 3 V, ± 10 %, VIN = 0.4 V or 2 Ve Limits - 40 °C to 85 °C Unit Parameter Symbol Temp.a Min. b Typ.c Max.b Analog Switch Analog Signal Range d VNO, VNC VCOM Full 0 V+ V On-Resistance RON V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA Room Full 0.85 1.6 1.7 RON Flatness RON Flatness V+ = 2.7 V, VCOM = 0 V to V+, INO, INC = 100 mA Room 0.16 RON Match RON Room 0.15 Switch Off Leakage Current I NO(off) INC(off) V+ = 3.3 V VNO, VNC = 1 V/3 V, VCOM = 3 V/1 V Room Full - 1 - 10 nAICOM(off) Room Full - 1 - 10 Channel-On Leakage Current I COM(on) V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V Room Full - 1 - 10 Digital Control Input High Voltage V INH Full 2 V Input Low Voltage VINL Full 0.4 Input Capacitance Cin Full 4 pF Input Current IINL or IINH VIN = 0 V or V+ Full - 1 1 µA Dynamic Characteristics Tur n-On Time t ON VNO or VNC = 2 V, RL = 300 , CL = 35 pF Room Full 40 65 nsTurn-Off Time tOFF Room Full 35 60 Break-Before-Make Time td Full 1 3 Charge Injectiond QINJ CL = 1 nF , VGEN = 0 V, RGEN = 0 Room 7 pC Off-Isolationd OIRR RL = 50 , CL = 5 pF , f = 1 MHz Room - 67 dB Crosstalkd XTALK Room - 70 NO, NC Off Capacitanced CNO(off) VIN = 0 V or V+, f = 1 MHz Room 63 pF CNC(off) Room 67 Channel-On Capacitanced CNO(on) Room 200 CNC(on Room 196
Document Number: 71971 S13-1282-Rev. D, 27-May-13 www.vishay.com Vishay Siliconix DG2015 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Notes: a. Room = 25 °C, full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. V IN = input voltage to perform proper function. f. Guaranteed by 5 V leakage testing, not production tested. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) SPECIFICATIONS (V+ = 3 V) Test Conditions Otherwise Unless Specified V+ = 3 V, ± 10 %, VIN = 0.4 V or 2 Ve Limits - 40 °C to 85 °C Unit Parameter Symbol Temp.a Min. b Typ.c Max.b Power Supply Power Supply Range V+ 2.7 3.3 V Power Supply Current I+ V IN = 0 V or V+ Full 1 µA Power Consumption PC Full 3.3 µW RON vs. VCOM and Supply Voltage Supply Current vs. Temperature 0.0 0.5 1.0 1.5 2.0 2.5 VCOM - Analog Voltage (V) V+ = 3.0 V, - On-Resistance (Ω)RON T = 25 °C IS = 100 mA - 60 - 40 - 20 0 20 40 60 80 100 0.1 100 Temperature (°C) I+ - Supply Current (nA) V+ = 3 V V IN = 0 V RON vs. Analog Voltage and Temperature Supply Current vs. Input Switching Frequency 0.0 0.5 1.0 1.5 2.0 2.5 VCOM - Analog Voltage (V) 25 °C - On-Resistance (Ω)RON V+ = 3 V - 40 °C 85 °C IS = 100 mA 10 10 K 100 K 10 M100 1 K 1 M 10 mA 1 mA 100 µA 10 µA 1 µA 10 nA 100 pA Input Switching Frequency (Hz) I+ - Supply Current (A) V+ = 3 V 100 nA 1 nA
www.vishay.com Document Number: 71971 S13-1282-Rev. D, 27-May-13 Vishay Siliconix DG2015 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Leakage Current vs. Temperature Switching Time vs. Temperature Switching Threshold vs. Supply Voltage - 60 - 40 - 20 0 20 40 60 80 100 Temperature (°C) V+ = 3 V 1000 100 INO(off), IINC(off) ICOM(on) ICOM(off) Leakage Current (pA) - 60 - 40 - 20 0 20 40 60 80 100 /t ON - Switching Time (μs)t OFF tOFF V+ = 3 V Temperature (°C) tON V+ = 3 V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 01234567 V+ - Supply Voltage (V) - Switching Threshold (V)VT Leakage vs. Analog Voltage Insertion Loss, Off-Isolation Crosstalk vs. Frequency Charge Injection vs. Analog Voltage - 800 - 600 - 400 - 200 200 400 600 800 VCOM, VNO, VNC - Analog Voltage (V) Leakage Current (pA) V+ = 3 V INO(off), IINC(off) ICOM(off) ICOM(on) - 90
100 K 10 M
- 70 - 50
100 M 1 G1 M
Frequency (Hz) (dB)Loss, OIRR, XTALK - 30 - 10 LOSS OIRR XTA L K V+ = 3 V R L = 50 Ω 0123456 VCOM - Analog Voltage (V) Q - Charge Injection (pC) V+ = 3 V
Package Information
www.vishay.com Vishay Siliconix Revision: 22-Apr-13 1 Document Number: 71921 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 QFN 4x4-16L Case Outline Notes (1) Use millimeters as the primary measurement. (2) Dimensioning and tolerances conform to ASME Y14.5M. - 1994. (3) N is the number of terminals. Nd and Ne is the number of terminals in each D and E site respectively. (4) Dimensions b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip. (5) The pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body. (6) Package warpage max. 0.05 mm. VARIATION 1 VARIATION 2 DIM MILLIMETERS(1) INCHES MILLIMETERS(1) INCHES A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 D 4.00 BSC 0.157 BSC 4.00 BSC 0.157 BSC e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC E 4.00 BSC 0.157 BSC 4.00 BSC 0.157 BSC N (3) 16 16 16 16 Nd(3) 4 444 Ne(3) 4 444 ECN: S13-0893-Rev. B, 22-Apr-13 DWG: 5890 (4) (5)
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