DF005M_V02 VISHAY

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
  • PDF pages: 4

Technical content

DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M www.vishay.com Vishay General Semiconductor Revision: 16-Aug-13 1 Document Number: 88571 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Miniature Glass Passivated Single-Phase Bridge Rectifiers

FEATURES

  • UL recognition, file number E54214
  • Ideal for printed circuit boards
  • Applicable for automative insertion
  • High surge current capability
  • Solder dip 275 °C max. 10 s, per JESD 22-B106
  • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballaster, adapter, battery charger, home appliances, office equipment, and telecommunication applications. MECHANICAL DATA Case: DFM Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked on body PRIMARY CHARACTERISTICS Package DFM IF(AV) 1 A VRRM

50 V, 100 V, 200 V, 400 V, 600 V,

800 V, 1000 V

IR 5 μA VF at IF = 1.0 A 1.1 V TJ max. 150 °C Diode variations Quad Case Style DFM MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT Device marking code DF005 DF01 DF02 DF04 DF06 DF08 DF10 Maximum repetitive peak reverse voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage V DC 50 100 200 400 600 800 1000 V Maximum average forward output rectified current at T A = 40 °C IF(AV) 1.0 A Peak forward surge current single sine-wave superimposed on rated load I FSM 50 A Rating for fusing (t < 8.3 ms) I 2t1 0 A 2s Operating junction and storage temperature range T J, TSTG - 55 to + 150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT Maximum instantaneous forward voltage drop per diode 1.0 A V F 1.1 V Maximum reverse current at rated DC blocking voltage per diode T A = 25 °C IR 5.0 μA TA = 125 °C 500 Typical junction capacitance per diode 4.0 V, 1 MHz C J 25 pF

DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M www.vishay.com Vishay General Semiconductor Revision: 16-Aug-13 2 Document Number: 88571 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.5" x 0.5" (13 mm x 13 mm) copper pads RATINGS AND CHARACTERISTICS CURVES (T A = 25 °C unless otherwise noted) Fig. 1 - Derating Curve Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 3 - Typical Forward Characteristics Per Diode Fig. 4 - Typical Reverse Leakage Characteristics Per Diode THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT Typical thermal resistance (1) RJA 40 °C/W RJL 15 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g ) PREFERRED PACKAGE CODE BA SE QUANTITY DELIVERY MODE DF06M-E3/45 0.416 45 50 Tube 20 40 60 80 100 120 140 150 0.5 1.0 60 Hz Resistive or Inductive Load P. C . B . M ounted on 0.51 x 0.51" (13 x 13 mm) Copper Pads with 0.06" (1.5 mm) Lead Length Ambient Temperature (°C) Average Forward Output Current (A) 1 10 100

1.0 Cycle

TJ = 150 °C Single Sine-Wave Number of Cycles at 60 Hz Average Forward Output Current (A) 0.01 0.1 Instantaneous Forward Voltage (V) Instantaneo us For ward C urrent (A) TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 0 20 40 60 80 100 0.01 0.1 100 TJ = 125 °C TJ = 25 °C Percent of Rated Peak Reverse Voltage (%) Instantaneo us Re verse C urrent (µA)

DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M www.vishay.com Vishay General Semiconductor Revision: 16-Aug-13 3 Document Number: 88571 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 1 10 100 100 TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p Reverse Voltage (V) Junction Capaci tance (pF) 0.01 0.1 1 10 100 0.1 100 t - Heating Time (s) Transient Thermal Impedance (°C/W) Case Style DFM 0.255 (6.5) 0.245 (6.2) 0.315 (8.00) 0.285 (7.24) 0.013 (0.33) 0.0086 (0.22) 0.350 (8.9) 0.300 (7.6) 0.075 (1.90) 0.055 (1.39) 0.205 (5.2) 0.195 (5.0) 0.080 (2.03) 0.050 (1.27) 0.185 (4.69) 0.150 (3.81) 0.335 (8.51) 0.320 (8.12) 0.130 (3.30) 0.120 (3.05) 0.045 (1.14) 0.035 (0.89) 0.023 (0.58) 0.018 (0.46)

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