DB101 CHENYI

Document overview

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  • PDF pages: 2

Technical content

Features

  • Through Hole Package
  • Glass Passivated Diode Construction
  • Moisture Resistant Epoxy Case
  • High Surge Current Capability Maximum Ratings
  • Operating Junction Temperature: -55°C to +125°C
  • Storage Temperature: -55°C to +150°C Catalog Number Device Marking Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage DB101 DB101 50V 35V 50V DB102 DB102 100V 70V 100V DB103 DB103 200V 140V 200V DB104 DB104 400V 280V 400V DB105 DB105 600V 420V 600V DB106 DB106 800V 560V 800V DB107 DB107 1000V 700V 1000V Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current I F(AV) 1 A TA = 40°C Peak Forward Surge Current I FSM 50A 8.3ms, half sine Maximum Instantaneous Forward Voltage V F 1.1V IFM = 1.0A; TJ = 25°C Maximum DC Reverse Current At Rated DC Blocking Voltage I R 10µA 0.5mA TJ = 25°C TJ = 125°C Typical Junction Capacitance C J 25pF Measured at 1.0MHz, V R=4.0V *Pulse Test: Pulse Width 300µsec, Duty Cycle 2% DB-1 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .320 .335 8.13 8.51 B .245 .255 6.20 6.50 C .300 .350 7.60 8.90 D .236 .283 6.01 7.20 E .120 .130 3.05 3.30 G .195 .205 5.00 5.20 F .016 .022 0.41 0.56 www.cnelectr .com Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 A B C D E F G + - ~ ~ Notch