2SD755 HITACHI

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Technical content

2SD755, 2SD756, 2SD756A Silicon NPN Epitaxial Application

  • Low frequency high voltage amplifier
  • Complementary pair with 2SB715, 2SB716 and 2SB716A Outline 1. Emitter 2. Collector 3. Base TO-92MOD

2SD755, 2SD756, 2SD756A Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SD755 2SD756 2SD756A Unit Collector to base voltage V CBO 100 120 140 V Collector to emitter voltage V CEO 100 120 140 V Emitter to base voltage V EBO 555V Collector current I C 50 50 50 mA Collector power dissipation P C 750 750 750 mW Junction temperature Tj 150 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °C Electrical Characteristics (Ta = 25°C) 2SD755 2SD756 2SD756A Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions Collector to emitter breakdown voltage V(BR)CEO 100 — — 120 — — 140 — — V I C = 1 mA, R BE = ¥ Collector to base breakdown voltage V(BR)CBO 100 — — 120 — — 140 — — V I C = 10 mA, IE = 0 Collector cutoff current ICBO — — 0.5 — — 0.5 — — 0.5 mAV CB = 100 V, IE = 0 DC current transfer ratio hFE1 *1 250 — 1200 250 — 800 250 — 500 V CE = 12 V, IC = 2 mA hFE2 125 — — 125 — — 125 — — V CE = 12 V, IC = 10 mA Base to emitter voltage VBE — — 0.75 — 0.75 — — 0.75 V V CE = 12 V, IC = 2 mA Collector to emitter saturation voltage V IB = 1 mA Gain bandwidth product fT — 350 — — 350 — — 350 — MHz V CE = 12 V, IC = 5 mA Collector output capacitance CB = 25 V, IE = 0, f = 1 MHz Note: 1. The 2SD755, 2SD756 and 2SD756A are grouped by hFE1 as follows. DE F 2SD755 250 to 500 400 to 800 600 to 1200 2SD756 250 to 500 400 to 800 — 2SD756A 250 to 500 — —

2SD755, 2SD756, 2SD756A 0 50 100 150 Ambient Temperature Ta (°C) Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve 750 500 250 Typical Output Characteristics 0 1 02 03 04 05 0 Collector Current IC (mA) Collector to Emitter Voltage VCE (V) IB = 0 10 µA Typical Transfer Characteristics Collector Current IC (mA) Base to Emitter Voltage VBE (V) 0.01 0.03 0.1 0.3 1.0 VCE = 12 V Ta = 100°C7 5 50 25 –250 DC Current Transfer Ratio vs. Collector Current Collector Current IC (mA) 200 400 600 800 1,000 1,200DC Current Transfer Ratio hFE VCE = 12 V Ta = 100 –25

2SD755, 2SD756, 2SD756A Gain Bandwidth Product vs. Collector Current Collector Current IC (mA) 100 300 1,000Gain Bandwidth Product fT (MHz) VCE = 12 V Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) Collector to Base Voltage VCB (V) 1 3 10 30 100 0.5 1.0 f = 1 MHz IE = 0 Area of Safe Operation 5 10 20 50 100 200 500 Collector Current IC (mA) Collector to Emitter Voltage VCE (V) 100 IC (max) (DC Operation) Ta = 25°C Pc = 750 mW (50 V, 15 mA) (100 V, 6 mA) 2SD756 2SD755 2SD756A (120 V, 5 mA) (140 V, 4 mA)

0.60 Max

0.5 – 0.1 8.0 – 0.5 0.7

2.3 Max

10.1 Min 0.5 1.27 2.54 0.65 – 0.1

0.75 Max

(reference value) TO-92 Mod Conforms 0.35 g Unit: mm

  1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 Copyright © Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. Hitachi Asia Pte. Ltd.

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