2SD468 HITACHI
Document overview
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Technical content
- Low frequency power amplifier
- Complementary pair with 2SB562 Outline 1. Emitter 2. Collector 3. Base TO-92MOD
Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 25 V Collector to emitter voltage V CEO 20 V Emitter to base voltage V EBO 5V Collector current I C 1.0 A Collector peak current i C(peak) 1.5 A Collector power dissipation P C 0.9 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 25 — — V I C = 10 mA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 20 — — V I C = 1 mA, RBE = ¥ Emitter to base breakdown voltage V(BR)EBO 5— — VI E = 10 mA, IC = 0 Collector cutoff current I CBO — — 1.0 mAV CB = 20 V, IE = 0 DC current transfer ratio hFE *1 85 — 240 V CE = 2 V, IC = 0.5 A*2 Collector to emitter saturation voltage VCE(sat) — 0.2 0.5 V I C = 0.8 A, IB = 0.08 A*2 Base to emitter voltage V BE — 0.79 1.0 V V CE = 2 V, IC = 0.5 A*2 Gain bandwidth product f T — 190 — MHz V CE = 2 V, IC = 0.5 A*2 Collector output capacitance Cob — 22 — pF V CB = 10 V, IE = 0, f = 1 MHz Notes: 1. The 2SD468 is grouped by hFE as follows. 2. Pulse test BC 85 to170 120 to 240
Maximum Collector Dissipation Curve Ambient Temperature Ta (°C) Collector Power Dissipation PC (W) 0.8 1.2 0.4 0 50 100 150 Typical Output Characteristics Collector to Emitter Voltage VCE (V) Collector Current IC (mA) 1,000 800 600 400 200 0 0.4 IB = 0 1mA 1.2 1.60.8 1.4 P C = 0.9 W Typical Transfer Characteristics Base to Emitter Voltage VBE (V) Collector Current IC (mA) 1,000 300 100 VCE = 2 V Ta = 75°C 25°C DC Current Transfer Ratio vs. Collector Current Collector Current IC (mA) DC Current Transfer Ratio hFE VCE = 2 V Ta = 75°C 25°C 5,000 2,000 1,000 500 200 100 1 10 100 1,0003 30 300
Collector to Emitter Saturation Voltage vs. Collector Current Collector Current IC (mA) Collector to Emitter Saturation Voltage VCE(sat) (V) 1 10 100 1,000 25°CTa = 75°C IC = 10 IB 0.25 0.20 0.15 0.10 0.05 3 30 300 Gain Bandwidth Product vs. Collector Current Collector Current IC (mA) Gain Bandwidth Product fT (MHz) 1,00030 10010 300 300 200 100 VCE = 2 V Collector Output Capacitance vs. Collector to Base Voltage Collector to Base Voltage VCB (V) Collector Output Capacitance Cob (pF) f = 1 MHz IE = 0 200 100 52 021 05 0
0.60 Max
0.5 – 0.1 8.0 – 0.5 0.7
2.3 Max
10.1 Min 0.5 1.27 2.54 0.65 – 0.1
0.75 Max
(reference value) TO-92 Mod Conforms 0.35 g Unit: mm
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