D45C2 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
isc website：www.iscsemi.cn isc Silicon PNP Power Transistors D45C2
DESCRIPTION
- Low Saturation Voltage
- Good Linearity of h FE
- Fast Switching Speeds
- Complement to Type D44C2
APPLICATIONS
- Designed for various specific and general purpose application such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0MHz series, shunt and switching regulators; low and high frequency inverters/ converters and many others. ABSOLUTE MAXIMUM RATINGS(T a =25℃) SYMBOL PARAMETER VALUE UNIT V CES Collector-Emitter Voltage -40 V V CEO Collector-Emitter Voltage -30 V V EBO Emitter-Base Voltage -5 V I C Collector Current-Continuous -4 A I CM Collector Current-Peak -6 A I B Base Current-Continuous -1 A P C Collector Power Dissipation C =25℃ 30 W T j Junction Temperature 150 ℃ T stg Storage Temperature Range -55~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R th j-c Thermal Resistance, Junction to Case 4.2 ℃/W
isc website：www.iscsemi.cn isc Silicon PNP Power Transistors D45C2
ELECTRICAL CHARACTERISTICS
T C =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V CE (sat) Collector-Emitter Saturation Voltage I C = -1A; I B = -50mA -0.5 V V BE (sat) Base-Emitter Saturation Voltage I C = -1A; I B = -100mA -1.3 V I CES Collector Cutoff Current V CE = -40V, V BE = 0 -10 μA I EBO Emitter Cutoff Current V EB = -5V; I C = 0 -100 μA h FE-1 DC Current Gain I C = -0.2A; V CE = -1V 40 120 h FE-2 DC Current Gain I C = -1A; V CE = -1V 20 f T Current-Gain—Bandwidth Product I C = -20mA;V CE = -4V;f test = 1MHz 40 MHz Switching Times t r Rise Time I C = -1A; I = -I = -0.1A; V CC = -20V 0.2 μs t s Storage Time 0.6 μs t f Fall Time 0.3 μs