D44C12 ISC
Document overview
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- PDF pages: 2
Technical content
isc website：www.iscsemi.cn isc Silicon NPN Power Transistors D44C12
DESCRIPTION
- Low Saturation Voltage
- Good Linearity of h FE
- Fast Switching Speeds
- Complement to Type D45C12
APPLICATIONS
- Designed for various specific and general purpose application such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0MHz series, shunt and switching regulators; low and high frequency inverters/ converters and many others. ABSOLUTE MAXIMUM RATINGS(T a =25℃) SYMBOL PARAMETER VALUE UNIT V CES Collector-Emitter Voltage 90 V V CEO Collector-Emitter Voltage 80 V V EBO Emitter-Base Voltage 5 V I C Collector Current-Continuous 4 A I CM Collector Current-Peak 6 A I B Base Current-Continuous 1 A P C Collector Power Dissipation C =25℃ 30 W T j Junction Temperature 150 ℃ T stg Storage Temperature Range -55~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R th j-c Thermal Resistance, Junction to Case 4.2 ℃/W
isc website：www.iscsemi.cn isc Silicon NPN Power Transistors D44C12
ELECTRICAL CHARACTERISTICS
T C =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V CE (sat) Collector-Emitter Saturation Voltage I C = 1A ;I B = 50mA 0.5 V V BE (sat) Base-Emitter Saturation Voltage I C = 1A ;I B = 100mA 1.3 V I CES Collector Cutoff Current V CE = 90V, V BE = 0 10 μA I EBO Emitter Cutoff Current V EB = 5V; I C = 0 100 μA h FE-1 DC Current Gain I C = 0.2A ; V CE = 1V 40 120 h FE-2 DC Current Gain I C = 2A ; V CE = 1V 20 f T Current-Gain—Bandwidth Product I C = 20mA;V CE = 4V;f test = 1MHz 50 MHz Switching Times t r Rise Time I C = 1A; I = -I = 0.1A; V CC = 20V 0.3 μs t s Storage Time 0.7 μs t f Fall Time 0.4 μs