D43C1 ETC1
Document overview
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Technical content
Complementary to the D42C Series Features: ‘TERMINAL DESIGNATIONS * High free-air power dissipation * Low collector saturation voltage (-0.5V typ. @-3A Ic) e * Excellent linearity -— ec «Fast switching G bC—— - = am E—— _——> ; Top view bd c The D43C-series of silicon p-n-p power transistors are ‘ecs—43er3 3 designed for various specific and general purpose applica- a tions, such as: output and driver stages of amplifiers ‘operating at frequencies from DC to greater than 1 MHz; series, shunt and switching regulators; and low and high JEDEC TO-202AB L_ frequency inverters/converters. These devices are supplied in the JEDEC TO-202AB plastic package. MAXIMUM RATINGS (Tj = 25° C) (unless otherwise specified) natin —__] B¥monT0aser, 2,3 [ 04ace 5, 6 [ 04307, 8,0 [ paacio, 11, 12 [unis Collector-Emitter Voltage [Voro | -90 | 4 [60 | -80 | Volts | Collector-Emitter Voltage [Vers | #0 | 85 | 70 [80 | Volts | Emitter Base Voltage [VWeso | 6 | 6 | 5 [| -5 | Vols | Collector Current — Continuous. Ic 3 3 3 3 Peak(?) tom 5 5 +5 5 Base Current — Continuous [i | 2 | 2 | 2 [ 2 7A | Total Power Dissipation @ Ta = 25°C 21 24 24 24 @Tc= 235°C 12.5 125 125 12.5 Operating ancl Siorage Junction TyTatg | -85t0 +150 | -85t0 +150 | -85t0 +150 | -55to +150 ‘THERMAL CHARACTERISTICS Thermal Resistance, JunctiontoAmbent’ | Awa | 6 | 60 | 6 [a [cw] Thermal Resistance, JunctiontoCase | Ayo | 10 | 1 | 10 [0 [row | Maximum Lead Temperature for Solderin, inmamgtomememeceacces | vu [wo | am | ao | ao | ve | (1) Pulse Test Pulse Width = 900ms Duty Cycle < 2%.
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