D40C7 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
isc website： www.iscsemi.com isc &iscsemi isregisteredtrademark1 iscSiliconNPNDarlingtonPowerTransistor D40C7
DESCRIPTION
- High DCCurrentGain- :hFE=10K-70K
- Collector-EmitterSustaining Voltage- :VCEO(SUS)=50V(Min)
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- Designedforgeneral-purposeamplifierand low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 50 V VCEO Collector-EmitterVoltage 50 V VEBO Emitter-BaseVoltage 13 V IC CollectorCurrent-Continuous 0.5 A ICM CollectorCurrent-Peak 1 A PC CollectorPowerDissipation @TC=25℃ 6.25 W Tj JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 20 ℃/W
isc website： www.iscsemi.com isc &iscsemi isregisteredtrademark2 iscSiliconNPNDarlingtonPowerTransistor D40C7 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-EmitterSustainingVoltage IC=10mA,IB=0 50 V VCE(sat) Collector-EmitterSaturationVoltage IC=500mA,IB=0.5mA 1.5 V VBE(sat) Base-EmitterSaturationVoltage IC=500mA,IB=0.5mA 2 V ICBO CollectorCutoffCurrent VCB=50V,IE=0 20 µA IEBO EmitterCutoffCurrent VEB=13V;IC=0 100 nA hFE DCCurrentGain IC=200mA;VCE=5V 10K 70K