D371S45T ISC

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

isc website:www.iscsemi.cn isc & iscsemi is registered trademark1 D371S45T Fast Recovery Diode

FEATURES

  • Fulldiffusionprocess,flattype ceramictube package
  • Doublesides cooling,Highcurrent
  • Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation

APPLICATIONS

  • High powerconverters
  • AC/DCswitching
  • Phasecontrolledrectifying ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VR RepetitivePeakReverseVoltage 4500 V IF(AV) AverageForwardCurrent TC=85℃;f=50Hz 330 A IFSM SurgeForwardCurrent tp=10ms 6000 A TJ JunctionTemperature -40~150 ℃ Tstg StorageTemperatureRange -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 0.4 ℃/W

isc website:www.iscsemi.cn isc & iscsemi is registered trademark2 D371S45T Fast Recovery Diode

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX UNIT VF ForwardVoltagedrop IF=1200A,TJ=25℃ 3.9 V IRRM InstantaneousReverseCurrent VRM=VRRM 100 mA trr ReverseRecoveryTime IFM=1000A,-di/dt=250A/µs; VR=1000V 4 µs