2SD313 ISC
Document overview
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Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD313 DESCRIPTION ·
- With TO-220C package
- Complement to type 2SB507
- Low collector saturation voltage
APPLICATIONS
- Designed for the output stage of 15W to 25W AF power amplifier PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 3 A ICM Collector current-Peak 8 A IB B Base current 1 A PC Collector dissipation TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ THERMAL CHARACTERISTICS SYMBOL CHARACTERISTICS MAX UNIT Rθjc Thermal resistance junction to case 4.16 ℃/W
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2 S D 3 1 3 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collector-emitter voltage IC=10mA; IB=0 60 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 1.0 V VBE Base-emitter on voltage IC=1A ; VCE=2V 1.5 V ICBO Collector cut-off current VCB=60V; IE=0 0.1 mA ICEO Collector cut-off current VCE=60V; IB=0 5 mA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE-1 DC current gain IC=1A ; VCE=2V 40 320 hFE-2 DC current gain IC=0.1A ; VCE=2V 40 fT Transition frequency IC=0.5A ; VCE=5V 5 MHz hFE-1Classifications C D E F 40-80 60-120 100-200 160-320
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2 S D 3 1 3 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)