2SD2102 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNDarlingtonPowerTransistor 2SD2102
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=60V(Min)
- High DCCurrentGain :hFE=1000(Min)@IC=2A,VCE=3V
APPLICATIONS
- Designedforlowfrequency power amplifierapplications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 60 V VCEO Collector-EmitterVoltage 60 V VEBO Emitter-BaseVoltage 7 V IC CollectorCurrent-Continuous 4 A ICM BaseCurrent-Peak 8 A PC CollectorPowerDissipation @Ta=25℃ 2 W CollectorPowerDissipation @TC=25℃ 25 TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNDarlingtonPowerTransistor 2SD2102 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=25mA;RBE= ∞ 60 V V(BR)CBO Collector-BaseBreakdown Voltage IC=0.1mA;IE=0 60 V V(BR)EBO Emitter-BaseBreakdownVoltage IE=50mA;IC=0 7 V VCE(sat)-1 Collector-EmitterSaturationVoltage IC=2A;IB=4mA 1.5 V VCE(sat) -2 Collector-EmitterSaturationVoltage IC=4A;IB=40mA 3.0 V VBE(sat)-1 Base-EmitterSaturationVoltage IC=2A;IB=4mA 2.0 V VBE(sat)-2 Base-EmitterSaturationVoltage IC=4A;IB=40mA 3.5 V ICBO CollectorCutoffCurrent VCB=50V;IE=0 10 μA ICEO CollectorCutoffCurrent VCE=50V;RBE= ∞ 10 μA hFE DCCurrentGain IC=2A;VCE=3V 1000 20000