2SD1609 HITACHI
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2SD1609, 2SD1610 Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline 1. Emitter 2. Collector 3. Base TO-126 MOD 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SD1609 2SD1610 Unit Collector to base voltage V CBO 160 200 V Collector to emitter voltage V CEO 160 200 V Emitter to base voltage V EBO 55V Collector current I C 100 100 mA Collector power dissipation P C 1.25 1.25 W Junction temperature Tj 150 150 °C Storage temperature Tstg –45 to +150 –45 to +150 °C
2SD1609, 2SD1610 Electrical Characteristics (Ta = 25°C) 2SD1609 2SD1610 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 160 — — 200 — — V I C = 10 mA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 160 — — 200 — — V I C = 1 mA, RBE = ¥ Emitter to base breakdown voltage V(BR)EBO 5— — 5— — VI E = 10 mA, IC = 0 Collector cutoff current ICBO ——1 0——— mAV CB = 140 V, IE = 0 DC current tarnsfer ratio hFE1 *1 60 — 320 60 — 320 V CE = 5 V, IC = 10 mA hFE2 30 — — 30 — — V CE = 5 V, IC = 1 mA Base to emitter voltage VBE — — 1.5 — — 1.5 V V CE = 5 V, IC = 10 mA Collector to emitter saturation voltage VCE(sat) ——2 ——2 V I C = 30 mA, IB = 3 mA Gain bandwidth product fT — 140 — — 140 — MHz V CE = 5 V, IC = 10 mA Collector output capacitance Cob — 3.8 — — 3.8 — pF V CB = 10 V, IE = 0, f = 1 MHz Note: 1. The 2SD1609 and 2SD1610 are grouped by hFE1 as follows. BC D 60 to 120 100 to 200 160 to 320 Maximum Collector Dissipation Curve 1.5 1.0 0.5 0 50 100 150 Ambient temperature Ta (°C) Collector power dissipation PC (W) Typical Output Characteristics 02 4 Collector to emitter voltage VCE (V) 1086 Collector current IC (mA) IB = 0 10 µA 100 110 120
2SD1609, 2SD1610 100 0 0.2 Collector current IC (mA) 0.4 Base to emitter voltage VBE (V) 0.6 1.00.8 Typical Transfer Characteristics VCE = 5 V Ta = 75 –25 500 200 100 1 2 20 100 10 50 DC current transfer ratio hFE Collector current IC (mA) VCE = 5 V Pulse DC Current Transfer Ratio vs. Collector Current Ta = 75°C 25 –25 Saturation Voltage vs. Collector Current IC = 10 IB Pulse 1.0 0.5 0.2 0.1 0.05 Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) 12 1 0 Collector current IC (mA) 55 0 20 100 VBE(sat) VCE(sat) Ta = –25°C Ta = –25°C Gain Bandwidth Product vs. Collector Current 500 200 100 1.00.5 2 Collector current IC (mA) 2010 505 Gain bandwidth product fT (MHz) VCE = 10 V
2SD1609, 2SD1610 1.0 0.51 Collector output capacitance Cob (pF) 25 1 0 Collector to base voltage VCB (V) 20 100 50 Collector Output Capacitance vs. Collector to Base Voltage f = 1 MHz I E = 0
3.1 φ +0.15 –0.1 8.0 – 0.5 2.3 – 0.3 1.1 3.7 – 0.7 0.8 2.7 – 0.4 120 120° 120 Hitachi Code JEDEC EIAJ Weight (reference value) TO-126 Mod 0.67 g Unit: mm
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