CTLDM303N-M832DS_12 ETC2

Document overview

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Technical content

Central Semiconductor’s CTLDM303N-M832DS (Dual, N-Channel) and CTLDM304P-M832DS (Dual, P-Channel) are enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These energy efficient MOSFETs offer beneficially low rDS(ON), low gate charge, and low threshold voltage. TLM832DS Typical Electrical Characteristics Dual, MOSFETs in the TLM832DS package CTLDM304P-M832DS (30V, 4.2A P-Channel) CTLDM303N-M832DS (30V, 3.6A N-Channel) Maximum Ratings (TA = 25˚C unless otherwise noted) Electrical Characteristics: (TA = 25˚C unless otherwise noted) Type No. I D (A) MAX PD (W) MAX TJ, Tstg (˚C) MAX ΘJA (˚C/W) MAX BVDSS (V) MIN V GS(th) (V) MIN MAX r DS(ON) @ V GS @ ID (m Ω) (m Ω) (V) (A) TYP MAX Qgs (nC) TYP Ciss (pF) TYP Crss (pF) TYP CTLDM303N-M832DS (N-Channel) 3.6 1.65 -55 to +150 76 30 0.6 1.2 33 4.5 2.5 1.8 1.8 0.9 590 55 CTLDM304P-M832DS (P-Channel) 4.2 1.65 -55 to +150 76 30 0.7 1.3 120 4.5 2.5 4.2 4.0 1.0 1.8 760 53 Use QR reader for direct link to product web page, Weblink: or use: www.centralsemi.com/info/CTLDM30 Literature: Order your selection guide today. Visit: web.centralsemi.com/search/sample.php New SMD SELECTION GUIDE To request samples visit: www.centralsemi.com/info/CTLDM30 Samples: 145 Adams Avenue • Hauppauge • New York • 11788 • USA • www.centralsemi.com

  • High current density
  • Energy efficiency Benefits: Features:
  • Low rDS(ON)
  • High current
  • Low gate charge Applications:
  • DC-DC converters
  • Drive circuits
  • Power management Product BriefProduct Brief

For further information contact: Sales at Central Semiconductor Corp. (631) 435-1110 or visit: www.centralsemi.com Innovative Discrete Semiconductors Sample devices available upon request. T o order samples visit: www.centralsemi.com/info/CTLDM30 Mechanical Drawing - TLM832DS Tape Dimensions and Orientation (Dimensions in mm) Reel Packing Information Reel Size Reels per Box (Maximum) Parts per Box (Maximum) Box Dimensions Shipping Weight (Max.) INCH CM LB KG 108 27,000 51,000 120,000 324,000 9x9x5 9x9x9 21x9x9 27x9x17 23x23x13 23x23x23 53x23x23 69x23x43 Mounting Pad (Dimensions in mm) Pinouts CTLDM303N-M832DS CTLDM304P-M832DS MARKING CODES CTLDM303N-M832DS: C330 CTLDM304P-M832DS: C430 Tape Width: 8mm Packaging Base /

Ordering Information

Reel Size Quantity Central Item No. 7” 3,000 CTLDM303N-M832DS TR CTLDM304P-M832DS TR * Devices are taped in accordance with Electronic Industries Association Standard EIA-481-1-A Direction of Unreeling LEAD CODE: 1) Gate Q1 2) Source Q1 3) Gate Q2 4) Source Q2 5) Drain Q2 6) Drain Q2 7) Drain Q1 8) Drain Q1 LEAD CODE: 1) Gate Q1 2) Source Q1 3) Gate Q2 4) Source Q2 5) Drain Q2 6) Drain Q2 7) Drain Q1 8) Drain Q1

145 Adams Avenue • Hauppauge • New York • 11788 • USA • Tel:(631) 435-1110 • Fax:(631) 435-1824

Dual, MOSFETs in the TLM832DS package CTLDM304P-M832DS (30V, 4.2A P-Channel) CTLDM303N-M832DS (30V, 3.6A N-Channel)