CTDBLP31.12

CTDBLP31.12 OSRAM

Document overview

• Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
• PDF pages: 22

Technical content

CT DBLP31.12 1 Version 1.3 | 2021-03-29 Produktdatenblatt | Version 1.1 www.osram-os.com

Applications

CT DBLP31.12 FIREFLY ® The FIREFLY E2218 family expands OSRAM Opto Semiconductors’ portfolio of visible products for use in mobile devices like fitness tracking or health monitoring. It offers the highest efficiency output and lowest forward Voltage (Vf) operation, for longer bat- tery life in portable applications. The compact size of only 1.8 mm x 2.2 mm x 0.6 mm allows customers the benefit of more flexible product designs. The true green CT DBLP31.12 is specially designed for Heart Rate Monitor applications. It features a very high lu- minous intensity to ideally match these applications. —Health Monitoring (Heart Rate Monitoring, Pulse Oximetry) Features: —Package: white SMT package —Chip technology: UX:3 —Typ. Radiation: 120° (Lambertian emitter) —Color: λdom = 536 nm (● true green) —ESD: 8 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 3B)

CT DBLP31.12 2 Version 1.3 | 2021-03-29

Ordering Information

Type Luminous Intensity 1) Ordering Code IF = 20 mA Iv CT DBLP31.12-6C5D-56-J6Q4 3150 ... 5000 mcd Q65112A4607 CT DBLP31.12-6C5D-56-J6U6 3150 ... 5000 mcd Q65112A6091

CT DBLP31.12 3 Version 1.3 | 2021-03-29 Maximum Ratings Parameter Symbol Values Operating Temperature Top min. max. -40 °C 85 °C Storage Temperature Tstg min. max. -40 °C 85 °C Junction Temperature Tj max. 125 °C Forward current TS = 25 °C IF min. max. 2.5 mA 140 mA Surge Current t ≤ 10 µs; D = 0.005 ; TS = 25 °C IFS max. 500 mA ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 3B) VESD 8 kV Reverse current 2) IR max. 200 mA

CT DBLP31.12 4 Version 1.3 | 2021-03-29 Characteristics IF = 20 mA; TS = 25 °C Parameter Symbol Values Peak Wavelength λpeak typ. 536 nm Dominant Wavelength 3) IF = 20 mA λdom min. typ. max. 526 nm 536 nm 544 nm Viewing angle at 50% IV 2φ typ. 120 ° Forward Voltage 4) IF = 20 mA VF min. typ. max. 2.00 V 2.30 V 2.80 V Reverse voltage (ESD device) VR ESD min. 45 V Reverse voltage 2) IR = 20 mA VR max. 1.2 V Real thermal resistance junction/solderpoint 5) RthJS real typ. max.

15 K / W

18 K / W

CT DBLP31.12 5 Version 1.3 | 2021-03-29 Brightness Groups Group Luminous Intensity 1) Luminous Intensity. 1) Luminous Flux 6) IF = 20 mA IF = 20 mA IF = 20 mA min. max. typ. Iv Iv ΦV 6C 3150 mcd 3550 mcd 10100 mlm 7C 3550 mcd 4000 mcd 11300 mlm 8C 4000 mcd 4500 mcd 12800 mlm 5D 4500 mcd 5000 mcd 14300 mlm Forward Voltage Groups Group Forward Voltage 4) Forward Voltage 4) IF = 20 mA IF = 20 mA min. max. VF VF J6 2.00 V 2.30 V Q4 2.30 V 2.50 V U6 2.50 V 2.80 V Wavelength Groups Group Dominant Wavelength 3) Dominant Wavelength 3) IF = 20 mA IF = 20 mA min. max. λdom λdom 5 526 nm 535 nm 6 535 nm 544 nm

CT DBLP31.12 6 Version 1.3 | 2021-03-29 Group Name on Label Example: 5D-5-J6 Brightness Wavelength Forward Voltage 5D 5 J6

CT DBLP31.12 7 Version 1.3 | 2021-03-29 Radiation Characteristics 6), 7) Irel = f (ϕ); TS = 25 °C 0.2 0.4 1.0 0.8 0.6 ϕ 1.0 0.8 0.6 0.4 50˚ 60˚ 70˚ 80˚ 90˚ 100˚ Relative Spectral Emission 6) Irel = f (λ); IF = 20 mA; TS = 25 °C CT DBLP31.12 350 400 450 500 550 600 650 700 750 800 λ [nm] 0,0 0,2 0,4 0,6 0,8 1,0 Irel :V λ :t rueg reen

CT DBLP31.12 8 Version 1.3 | 2021-03-29 Forward current 6), 8) IF = f(VF); TS = 25 °C CT DBLP31.12 VF /V 2,5 100 200 300 400 500IF /m A Relative Luminous Flux 6), 8) Iv/Iv(20 mA) = f(IF); TS = 25 °C CT DBLP31.12 2,5 100 200 300 400 500 IF /m A 12IV IV(20mA) Dominant Wavelength 6) Δλdom = f(IF); TS = 25 °C CT DBLP31.12 2,5 20 40 60 80 100 120 140 IF [mA] -10 8∆λ dom [nm]

CT DBLP31.12 9 Version 1.3 | 2021-03-29 Forward Voltage 6) ΔVF = VF - VF(25 °C) = f(Tj); IF = 20 mA CT DBLP31.12 -40- 20 02 04 06 08 0 100 120 Tj [°C] -0,3 -0,2 -0,1 0,0 0,1 0,2 0,3∆VF [V] Relative Luminous Intensity 6) Iv/Iv(25 °C) = f(Tj); IF = 20 mA CT DBLP31.12 -40- 20 02 04 06 08 0 100 120 Tj [°C] 0,0 0,2 0,4 0,6 0,8 1,0 1,2Iv Iv(25°C) Dominant Wavelength 6) Δλdom = λdom - λdom(25 °C) = f(Tj); IF = 20 mA CT DBLP31.12 -40- 20 02 04 06 08 0 100 120 Tj [°C] 10∆λ dom [nm]

CT DBLP31.12 10 Version 1.3 | 2021-03-29 Max. Permissible Forward Current IF = f(T) 02 04 06 08 0 Ts /° C 100 110 120 130 140 150IF /m A CT DBLP31.12 :T S Permissible Pulse Handling Capability IF = f(tp); D: Duty cycle 10-6 10-5 10-4 10-3 0.01 0.11 10 Pulset ime /s 0.2 0.3 0.4 0.5 0.6IF /A TS =0 °C ... 85°C CT DBLP31.12 :D =1 .0 :D =0 .5 :D =0 .2 :D =0 .1 :D =0 .05 :D =0 .02 :D =0 .01 :D =0 .005

CT DBLP31.12 11 Version 1.3 | 2021-03-29 Dimensional Drawing 9) Further Information: Approximate Weight: 6.0 mg ESD advice: The device is protected by ESD device which is connected in parallel to the Chip.

CT DBLP31.12 12 Version 1.3 | 2021-03-29 Electrical Internal Circuit Recommended Solder Pad 9) For superior solder joint connectivity results we recommend soldering under standard nitrogen atmosphere. Package not suitable for ultra sonic cleaning.

CT DBLP31.12 13 Version 1.3 | 2021-03-29 Reflow Soldering Profile Product complies to MSL Level 3 acc. to JEDEC J-STD-020E 00 s OHA04525 100 150 200 250 300 50 100 150 200 250 300 t T St t Pt Tp240 ˚C 217 ˚C 245 ˚C 25 ˚C L Profile Feature Symbol Pb-Free (SnAgCu) Assembly Unit Minimum Recommendation Maximum Ramp-up rate to preheat*) 25 °C to 150 °C 2 3 K/s Time tS TSmin to TSmax tS 60 100 120 s Ramp-up rate to peak*) TSmax to TP 2 3 K/s Liquidus temperature TL 217 °C Time above liquidus temperature tL 80 100 s Peak temperature TP 245 260 °C Time within 5 °C of the specified peak temperature TP - 5 K tP 10 20 30 s Ramp-down rate* TP to 100 °C 3 6 K/s Time 25 °C to TP 480 s All temperatures refer to the center of the package, measured on the top of the component * slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range

CT DBLP31.12 14 Version 1.3 | 2021-03-29 Taping 9)

CT DBLP31.12 15 Version 1.3 | 2021-03-29 Tape and Reel 10) Reel Dimensions A W Nmin W1 W2 max Pieces per PU 180 mm 8 + 0.3 / - 0.1 mm 60 mm 8.4 + 2 mm 14.4 mm 4000

CT DBLP31.12 16 Version 1.3 | 2021-03-29 Barcode-Product-Label (BPL) Dry Packing Process and Materials 9) OHA00539 OSRAM Moisture-sensitive label or print Barcode label Desiccant Humidity indicator Barcode label OSRAM Please check the HIC immidiately after bag opening. Discard if circles overrun. Avoid metal contact. WET Do not eat. Comparator check dot parts still adequately dry. examine units, if necessary examine units, if necessary 15% 10%bake units bake units If wet, change desiccant If wet, Humidity Indicator MIL-I-8835 If wet, M oisture Level 3 Floor tim e 168 Hours M oisture Level 6 Floor tim e 6 Hours a) Hum idity Indicator Card is > 10% when read at 23 ˚C ± 5 ˚C, or reflow, vapor-phase reflow, or equivalent processing (peak package 2. After this bag is opened, devices that will be subjected to infrared 1. Shelf life in sealed bag: 24 m onths at < 40 ˚C and < 90% relative hum idity (RH). M oisture Level 5a at factory conditions of (if blank, seal date is identical with date code). a) M ounted within b) Stored at body tem 3. Devices require baking, before m ounting, if: Bag seal date M oisture Level 1 M oisture Level 2 M oisture Level 2a4. If baking is required, b) 2a or 2b is not m et. Date and tim e opened: reference IPC/JEDEC J-STD-033 for bake procedure. Floor tim e see below If blank, see bar code label Floor tim e > 1 Year Floor tim e 1 Year Floor tim e 4 W eeks10% RH. M oisture Level 4 M oisture Level 5 ˚C). OPTO SEMICONDUCTORS MOISTURE SENSITIVE This bag contains CAUTION Floor tim e 72 Hours Floor tim e 48 Hours Floor tim e 24 Hours 30 ˚C/60% RH. LEVEL If blank, see bar code label Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card according JEDEC-STD-033.

CT DBLP31.12 17 Version 1.3 | 2021-03-29 Chip Technology: P: Standard power class S: Highest power class Package Type D: Top emitting device, leadframe based, white reflector package Wavelength Emission Color (λdom typ.) T: 528 nm true green H: 645 nm hyper-red B: 470 nm blue R: 625 nm red W: white Product version C: Consumer Segment L: Automotive Multi- market Encapsulant Type / Lens Properties L: No lens (Lambertian) Lead / Package Properties TOPlooker: B: 2218 E: 1608 Technology Concept S: Silicone casting 3: Silicone encapsulation Type Designation System C H D E L S S 1 . 1 2 Binning Information: Saturated colors 2: mcd Special characteristics Saturated colors 1: InGAN saturated 2: InGaAIP saturated

CT DBLP31.12 18 Version 1.3 | 2021-03-29 Notes The evaluation of eye safety occurs according to the standard IEC 62471:2006 (photo biological safety of lamps and lamp systems). Within the risk grouping system of this IEC standard, the device specified in this data sheet fall into the class moderate risk (exposure time 0.25 s). Under real circumstances (for exposure time, conditions of the eye pupils, observation distance), it is assumed that no endangerment to the eye ex- ists from these devices. As a matter of principle, however, it should be mentioned that intense light sources have a high secondary exposure potential due to their blinding effect. When looking at bright light sources (e.g. headlights), temporary reduction in visual acuity and afterimages can occur, leading to irritation, annoy- ance, visual impairment, and even accidents, depending on the situation. Subcomponents of this device contain, in addition to other substances, metal filled materials including silver. Metal filled materials can be affected by environments that contain traces of aggressive substances. There- fore, we recommend that customers minimize device exposure to aggressive substances during storage, production, and use. Devices that showed visible discoloration when tested using the described tests above did show no performance deviations within failure limits during the stated test duration. Respective failure limits are described in the IEC60810. For further application related information please visit www.osram-os.com/appnotes

CT DBLP31.12 19 Version 1.3 | 2021-03-29 Disclaimer Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version on the OSRAM OS website. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Product and functional safety devices/applications or medical devices/applications OSRAM OS components are not developed, constructed or tested for the application as safety relevant component or for the application in medical devices. OSRAM OS products are not qualified at module and system level for such application. In case buyer – or customer supplied by buyer – considers using OSRAM OS components in product safety devices/applications or medical devices/applications, buyer and/or customer has to inform the local sales partner of OSRAM OS immediately and OSRAM OS and buyer and /or customer will analyze and coordi- nate the customer-specific request between OSRAM OS and buyer and/or customer.

CT DBLP31.12 20 Version 1.3 | 2021-03-29 Glossary 1) Brightness: Brightness values are measured during a current pulse of typically 25 ms, with an internal reproducibility of ±8 % and an expanded uncertainty of ±11 % (acc. to GUM with a coverage factor of k = 3). 2) Reverse Operation: This product is intended to be operated applying a forward current within the specified range. Applying any continuous reverse bias or forward bias below the voltage range of light emission shall be avoided because it may cause migration which can change the electro-optical char- acteristics or damage the LED. 3) Wavelength: The wavelength is measured at a current pulse of typically 25 ms, with an internal repro- ducibility of ±0.5 nm and an expanded uncertainty of ±1 nm (acc. to GUM with a coverage factor of k = 3). 4) Forward Voltage: The forward voltage is measured during a current pulse of typically 8 ms, with an internal reproducibility of ±0.05 V and an expanded uncertainty of ±0.1 V (acc. to GUM with a coverage factor of k = 3). 5) Thermal Resistance: Rth max is based on statistic values (6σ). 6) Typical Values: Due to the special conditions of the manufacturing processes of semiconductor devic- es, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could dif- fer from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice. 7) Testing temperature: TA = 25°C (unless otherwise specified) 8) Characteristic curve: In the range where the line of the graph is broken, you must expect higher differ- ences between single devices within one packing unit. 9) Tolerance of Measure: Unless otherwise noted in drawing, tolerances are specified with ±0.1 and dimensions are specified in mm. 10) Tape and Reel: All dimensions and tolerances are specified acc. IEC 60286-3 and specified in mm.

CT DBLP31.12 21 Version 1.3 | 2021-03-29

Revision History

1.2 2019-09-17 Derating (Diagrams) Maximum Ratings 1.3 2021-03-29 Electro - Optical Characteristics (Diagrams)

CT DBLP31.12 22 Version 1.3 | 2021-03-29 Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93055 Regensburg www.osram-os.com © All Rights Reserved.