CT40KM-8H RENESAS

Document overview

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  • PDF pages: 5

Technical content

Features

  • VCES : 400 V
  • TO-220FN package
  • High Speed Switching Outline 1 : Gate 2 : Collector 3 : Emitter TO-220FN

Applications

(Tc = 25°C) Parameter Symbol Ratings Unit Conditions Collector-emitter voltage V CES 400 V V GE = 0 V Gate-emitter voltage V GES 30 V VCE = 0 V, Refer to item 4 under Notes on the Actual Specifications Peak gate-emitter voltage V GEM 40 V V CE = 0 V, tw = 0.5 s Collector current (Pulse) I CM 200 A CM = 1500 µF (see performance curve) Maximum power dissipation P C 45 W Junction temperature Tj – 40 to +150 °C Storage temperature Tstg – 40 to +150 °C Mass — 2.0 g Typical value

Rev.1.00, Aug.20.2004, page 2 of 4

Electrical Characteristics

(Tj = 25°C) Parameter Symbol Min. Typ. Max. Unit Test conditions Collector-emitter breakdown voltage V (BR)CES 450 — — V I C = 1 mA, VGE = 0 V Collector-emitter leakage current I CES ——1 0 µAV CE = 400 V, VGE = 0 V Gate-emitter leakage current I GES —— ±0.1 µAV GE = ±40 V, VCE = 0 V Gate-emitter threshold voltage V GE(th) —— 7 . 0V V CE = 10 V, IC = 1 mA Performance Curves Pulse Collector Current ICM (A) Gate-Emitter Voltage VGE (V) Maximum Pulse Collector Current 160 120 200 0 5010 20 30 40 CM µF RG = 30Ω

Rev.1.00, Aug.20.2004, page 3 of 4 Application Example RG VCE VCM CM Vtrig VG IGBT IXe VCM ICP CM VGE 330 V 180 A 1200 µF 28 V Recommended Operation Conditions 350 V 200 A 1500 µF Maximum Operation Conditions VtrigTrigger Signal VGIGBT Gate Voltage IXeXe Tube Current Precautions on Usage 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And peak reverse gate current during turn-off must become less than 1 A. (In general, when RG(off) = 30 Ω , it is satisfied.) 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the device from electrostatic charge. 3. The operation life should be endured 5,000 shots under the charge current (I Xe ≤ 200 A : full luminescence condition) of main capacitor (CM = 1500 µF) which can endure repeated discharge of 5,000 times. Repetition period under full luminescence condition is over 3 seconds. 4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours.

Rev.1.00, Aug.20.2004, page 4 of 4 Package Dimensions TO-220FN  2.0 Cu alloy Symbol Dimension in Millimeters Min Typ Max A b D E e x y ZD ZE 10 ± 0.3 15 ± 0.314 ± 0.5 3 ± 0.33.6 ± 0.3 2.54 ± 0.25 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 2.54 ± 0.25 6.5 ± 0.3 2.6 ± 0.2 4.5 ± 0.2 2.8 ± 0.2 0.75 ± 0.15 φ 3.2 ± 0.2 Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Standard order code example Straight type Plastic Magazine (Tube) 50 Type name CT40KM-8H Note : Please confirm the specificat ion about the shipping in detail.

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