CSD87334Q3D Synchronous Buck NexFET™ Power Block datasheet (Rev. A)

Document overview

  • Manufacturer or author: Texas Instruments, Incorporated [SLPS546,A]
  • PDF pages: 25

Technical content

Output Current (A) Efficiency (%) Power Loss (W) 0 5 10 15 20 50 0 60 1 70 2 80 3 90 4 100 5 D000 VGS = 5 V VIN = 12 V VOUT = 3.3 V LOUT = 1.0 PH fSW = 500 kHz TA = 25qC VDD GND ENABLE PWM BOOT DRVH LL DRVL VDD ENABLE PWM VIN VIN VSW PGND VOUT Driver IC CSD87334Q3D TG TGR BG P0116-01

3 VSW

4 BG5TGR

(Pin□9) 7VIN 8VIN Product Folder Order Now T echnical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD87334Q3D SLPS546A –JULY 2015–REVISED MARCH 2017 CSD87334Q3DSynchronousBuckNexFET™ PowerBlock

1 Features

1• Half-Bridge Power Block

  • Optimized for High-Duty Cycle
  • Up to 24 Vin
  • 96.1% System Efficiency at 12 A
  • 1.6-W PLoss at 12 A
  • Up to 20-A Operation
  • High-Frequency Operation (up to 1.5 MHz)
  • High-Density SON 3.3 mm × 3.3 mm Footprint
  • Optimized for 5-V Gate Drive
  • Low-Switching Losses
  • Ultra-Low-Inductance Package
  • RoHS Compliant
  • Halogen-Free
  • Lead-Free Terminal Plating

2 Applications

  • Synchronous Buck Converters – High-Frequency Applications – High-Duty Cycle Applications
  • Synchronous Boost Converters
  • POL DC-DC Converters

3 Description

The CSD87334Q3D NexFET™ power block is an optimized design for synchronous buck and boost applications offering high-current, high-efficiency, and high-frequency capability in a small 3.3 mm × 3.3 mm outline. Optimized for 5-V gate drive applications, this product offers a flexible solution in high-duty cycle applications when paired with an external controller or driver. TOP VIEW Device Information(1) DEVICE QTY MEDIA PACKAGE SHIP CSD87334Q3D 2500 13-Inch Reel SON 3.30-mm × 3.30-mm Plastic Package Tape and ReelCSD87334Q3DT 250 7-Inch Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. Typical Circuit Typical Power Block Efficiency and Power Loss

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9 Mechanical, Packaging, and Orderable

4 Revision History

Changes from Original (August 2015) to Revision A Page

  • Added Receiving Notification of Documentation Updates section and Community Resources section to Device and

www.ti.com SLPS546A –JULY 2015–REVISED MARCH 2017 Product Folder Links: CSD87334Q3D Submit Documentation FeedbackCopyright © 2015–2017, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

5 Specifications

5.1 Absolute Maximum Ratings

TA = 25°C (unless otherwise noted) (see (1)) MIN MAX UNIT Voltage VIN to PGND 30 V VSW to PGND 30 VSW to PGND (10 ns) 32 TG to TGR –0.3 10 BG to PGND –0.3 10 IDM Pulsed current rating 60 A PD Power dissipation 6 W EAS Avalanche energy Sync FET, ID = 31 A, L = 0.1 mH 48 mJ Control FET, ID = 31 A, L = 0.1 mH 48 TJ Operating junction temperature –55 150 °C Tstg Storage temperature –55 150 °C

5.2 Recommended Operating Conditions

TA = 25°C (unless otherwise noted) MIN MAX UNIT VGS Gate drive voltage 3.3 8 V VIN Input supply voltage 24 V ƒSW Switching frequency CBST = 0.1 µF (min) 1500 kHz Operating current 20 A TJ Operating temperature 125 °C (1) Measurement made with six 10-µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins and using a high current 5-V driver IC.

5.3 Power Block Performance

TA = 25°C (unless otherwise noted) (see (1)) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT PLOSS Power loss(1) VIN = 12 V, VGS = 5 V, VOUT = 3.3 V, IOUT = 12 A, ƒSW = 500 kHz, LOUT = 1 µH, TJ = 25°C 1.6 W IQVIN VIN quiescent current TG to TGR = 0 V BG to PGND = 0 V 10 µA (1) RθJC is determined with the device mounted on a 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in design. (2) Device mounted on FR4 material with 1-in2 (6.45-cm2) Cu.

5.4 Thermal Information

TA = 25°C (unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJA Junction-to-ambient thermal resistance (min Cu)(1) 130 °C/W Junction-to-ambient thermal resistance (max Cu)(1)(2) 75 RθJC Junction-to-case thermal resistance (top of package)(1) 21 °C/W Junction-to-case thermal resistance (PGND pin)(1) 2.1

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5.5 Electrical Characteristics

TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS Q1 CONTROL FET Q2 SYNC FET UNIT MIN TYP MAX MIN TYP MAX STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, IDS = 250 µA 30 30 V IDSS Drain-to-source leakage current VGS = 0 V, VDS = 20 V 1 1 µA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 10 V 100 100 nA VGS(th) Gate-to-source threshold RDS(on) Drain-to-source on resistance VGS = 8 V, IDS = 12 A 4.9 6.0 4.9 6.0 gfs Transconductance VDS = 15 V, IDS = 12 A 62 62 S DYNAMIC CHARACTERISTICS CISS Input capacitance VGS = 0 V, VDS = 15 V, ƒ = 1 MHz 971 1260 971 1260 pF COSS Output capacitance 453 589 453 589 pF CRSS Reverse transfer capacitance 16 21 16 21 pF RG Series gate resistance 1.0 2.0 1.0 2.0 Ω Qg Gate charge total (4.5 V) VDS = 15 V, IDS = 12 A 6.4 8.3 6.4 8.3 nC Qgd Gate charge gate-to-drain 1.0 1.0 nC Qgs Gate charge gate-to-source 1.9 1.9 nC Qg(th) Gate charge at Vth 0.9 0.9 nC QOSS Output charge VDS = 15 V, VGS = 0 V 10.5 10.5 nC td(on) Turnon delay time VDS = 15 V, VGS = 4.5 V, IDS = 12 A, RG = 2 Ω 4 4 ns tr Rise time 7 7 ns td(off) Turnoff delay time 11 11 ns tf Fall time 17 17 ns DIODE CHARACTERISTICS VSD Diode forward voltage IDS = 12 A, VGS = 0 V 0.8 1.0 0.8 1.0 V Qrr Reverse recovery charge VDS = 15 V, IF = 12 A, di/dt = 300 A/µs 23 23 nC trr Reverse recovery Time 18 18 ns Max RθJA = 75°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu. Max RθJA = 130°C/W when mounted on minimum pad area of 2-oz (0.071-mm) thick Cu.

400 LFM

200 LFM

100 LFM

5.6 Typical Power Block Device Characteristics

VIN = 12 V, VGS = 5 V, VOUT = 3.3 V, ƒSW = 500 kHz, LOUT = 1 µH. TA = 125°C, unless stated otherwise. Figure 1. Power Loss vs Output Current Figure 2. Power Loss vs Temperature Figure 3. Safe Operating Area – PCB Horizontal Mount Figure 4. Safe Operating Area – PCB Vertical Mount Figure 5. Typical Safe Operating Area

5.7 Typical Power Block MOSFET Characteristics

TA = 25°C, unless stated otherwise. Figure 10. MOSFET Saturation Characteristics Figure 11. MOSFET Transfer Characteristics Figure 12. MOSFET Gate Charge Figure 13. MOSFET Capacitance Figure 14. MOSFET VGS(th) Figure 15. MOSFET RDS(on) vs VGS

6 Application and Implementation

validate and test their design implementation to confirm system functionality.

6.1 Application Information

graphs allow engineers to predict the product performance in the actual application.

6.2 Typical Application

Figure 19. Typical Circuit Application

6.3 System Example

6.3.1 Power Loss Curves

MOSFET centric parameters such as RDS(ON) and Qgd are needed to estimate the loss generated by the devices. gate drive loss. Equation 1 is used to generate the power loss curve. under isothermal test conditions.

SLPS546A –JULY 2015–REVISED MARCH 2017 www.ti.com Product Folder Links: CSD87334Q3D Submit Documentation Feedback Copyright © 2015–2017, Texas Instruments Incorporated System Example (continued)

6.3.2 Safe Operating Area (SOA) Curves

The SOA curves in the CSD87334Q3D data sheet provides guidance on the temperature boundaries within an operating system by incorporating the thermal resistance and system power loss. Figure 3 to Figure 5 outline the temperature and airflow conditions required for a given load current. The area under the curve dictates the SOA. All the curves are based on measurements made on a PCB design with dimensions of 4 in (W) × 3.5 in (L) × 0.062 in (T) and 6 copper layers of 1-oz copper thickness.

6.3.3 Normalized Curves

The normalized curves in the CSD87334Q3D data sheet provides guidance on the power loss and SOA adjustments based on their application specific needs. These curves show how the power loss and SOA boundaries adjust for a given set of system conditions. The primary Y-axis is the normalized change in power loss, and the secondary Y-axis is the change is system temperature required in order to comply with the SOA curve. The change in power loss is a multiplier for the power loss curve and the change in temperature is subtracted from the SOA curve.

6.3.4 Calculating Power Loss and SOA

The user can estimate product loss and SOA boundaries by arithmetic means (see Design Example section). Though the power loss and SOA curves in this data sheet are taken for a specific set of test conditions, the following procedure outlines the steps the user should take to predict product performance for any set of system conditions.

6.3.4.1 Design Example

Operating conditions:

  • Output current = 15 A
  • Input voltage = 16 V
  • Output voltage = 5 V
  • Switching frequency = 1000 kHz
  • Inductor = 0.6 µH

6.3.4.2 Calculating Power Loss

  • Power loss at 15 A = 2.8 W (Figure 1)
  • Normalized power loss for input voltage ≈ 1.05 (Figure 7)
  • Normalized power loss for output voltage ≈ 1.08 (Figure 8)
  • Normalized power loss for switching frequency ≈ 1.03 (Figure 6)
  • Normalized power loss for output inductor ≈ 1.05 (Figure 9)

6.3.4.3 Calculating SOA Adjustments

  • SOA adjustment for input voltage ≈ 0.5°C (Figure 7)
  • SOA adjustment for output voltage ≈ 0.7°C (Figure 8)
  • SOA adjustment for switching frequency ≈ 0.3°C (Figure 6)
  • SOA adjustment for output inductor ≈ 0.5°C (Figure 9)
  • Final calculated SOA adjustment = 0.5 + 0.7 + 0.3 + 0.5 ≈ 2°C In the design example, the estimated power loss of the CSD87334Q3D would increase to 3.4 W. In addition, the maximum allowable board or ambient temperature, or both, would have to decrease by 2°C. Figure 20 graphically shows how the SOA curve would be adjusted accordingly. 1. Start by drawing a horizontal line from the application current to the SOA curve. 2. Draw a vertical line from the SOA curve intercept down to the board or ambient temperature. 3. Adjust the SOA board or ambient temperature by subtracting the temperature adjustment value.

would yield an increase in allowable board or ambient temperature. Figure 20. Power Block SOA

SLPS546A –JULY 2015–REVISED MARCH 2017 www.ti.com Product Folder Links: CSD87334Q3D Submit Documentation Feedback Copyright © 2015–2017, Texas Instruments Incorporated (1) Keong W. Kam, David Pommerenke, “EMI Analysis Methods for Synchronous Buck Converter EMI Root Cause Analysis”, University of Missouri – Rolla

7 Layout

7.1 Layout Guidelines

7.1.1 Recommended PCB Design Overview

There are two key system-level parameters that can be addressed with a proper PCB design: electrical and thermal performance. Properly optimizing the PCB layout yields maximum performance in both areas. A brief description on how to address each parameter is provided.

7.1.2 Electrical Performance

The power block has the ability to switch voltages at rates greater than 10 kV/µs. Special care must be then taken with the PCB layout design and placement of the input capacitors, driver IC, and output inductor.

  • The placement of the input capacitors relative to the power block’s VIN and PGND pins should have the highest priority during the component placement routine. It is critical to minimize these node lengths. As such, ceramic input capacitors need to be placed as close as possible to the VIN and PGND pins (see Figure 21). The example in Figure 21 uses six 10-µF ceramic capacitors (TDK C3216X5R1C106KT or equivalent). Notice there are ceramic capacitors on both sides of the board with an appropriate amount of vias interconnecting both layers. In terms of priority of placement next to the power block, C5, C7, C19, and C8 should follow in order.
  • The driver IC should be placed relatively close to the power block gate pins. TG and BG should connect to the outputs of the driver IC. The TGR pin serves as the return path of the high-side gate drive circuitry and should be connected to the phase pin of the IC (sometimes called LX, LL, SW, PH, and so forth). The bootstrap capacitor for the driver IC will also connect to this pin.
  • The switching node of the output inductor should be placed relatively close to the power block VSW pins. Minimizing the node length between these two components will reduce the PCB conduction losses and actually reduce the switching noise level.(1) In the event the switch node waveform exhibits ringing that reaches undesirable levels, the use of a boost resistor or RC snubber can be an effective way to easily reduce the peak ring level. The recommended boost resistor value will range between 1 Ω to 4.7 Ω depending on the output characteristics of driver IC used in conjunction with the power block. The RC snubber values can range from 0.5 Ω to 2.2 Ω for the R, and from 330 pf to 2200 pF for the C. Please refer to Snubber Circuits: Theory, Design and Application (SLUP100) for more details on how to properly tune the RC snubber values. The RC snubber should be placed as close as possible to the VSW node and PGND (see Figure 21). (1)

7.2 Layout Example

Figure 21. Recommended PCB Layout (Top Down)

7.3 Thermal Considerations

  • Intentionally space out the vias from each other to avoid a cluster of holes in a given area.
  • Use the smallest drill size allowed in your design. The example in Figure 21 uses vias with a 10-mil drill hole and a 16-mil capture pad.
  • Tent the opposite side of the via with solder-mask. The number and drill size of the thermal vias should align with the PCB design rules and manufacturing capabilities of the end user.

SLPS546A –JULY 2015–REVISED MARCH 2017 www.ti.com Product Folder Links: CSD87334Q3D Submit Documentation Feedback Copyright © 2015–2017, Texas Instruments Incorporated

8 Device and Documentation Support

8.1 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.

8.2 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

8.3 Trademarks

NexFET, E2E are trademarks of Texas Instruments. All other trademarks are the property of their respective owners.

8.4 Electrostatic Discharge Caution

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

8.5 Glossary

SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions.

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9 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

9.1 Q3D Package Dimensions

A 0.850 1.050 0.033 0.041 b 0.280 0.400 0.011 0.016 b1 0.310 0.012 c 0.150 0.250 0.006 0.010 c1 0.150 0.250 0.006 0.010 d 0.940 1.040 0.037 0.041 d1 0.160 0.260 0.006 0.010 d2 0.150 0.250 0.006 0.010 d3 0.250 0.350 0.010 0.014 d4 0.175 0.275 0.007 0.011 D1 3.200 3.400 0.126 0.134 D2 2.650 2.750 0.104 0.108 E 3.200 3.400 0.126 0.134 E1 3.200 3.400 0.126 0.134 E2 1.750 1.850 0.069 0.073 e 0.650 TYP 0.026 TYP L 0.400 0.500 0.016 0.020 θ 0.000 — — — K 0.300 TYP 0.012 TYP

Table 1. Pinout Configuration

9.2 Land Pattern Recommendation

NOTE: Dimensions are in mm (in).

4.00 ±0.10 (See Note 1) 2.00 ±0.05 3.60 3.60 1.30 1.75 ±0.10 M0144-01 8.00 ±0.10 12.00 +0.30 –0.10 5.50 ±0.05 Ø 1.50 +0.10 –0.00 0.300□(0.012) 0.300□(0.012) 0.300 (0.012) M0207-01 0.340 (0.013) 0.333 (0.013) 0.100 0.160□(0.005) 2.290 (0.090) 0.350□(0.014) 0.850□(0.033) 0.990 (0.039) CSD87334Q3D www.ti.com SLPS546A –JULY 2015–REVISED MARCH 2017 Product Folder Links: CSD87334Q3D Submit Documentation FeedbackCopyright © 2015–2017, Texas Instruments Incorporated

9.3 Stencil Recommendation

NOTE: Dimensions are in mm (in). For recommended circuit layout for PCB designs, see Reducing Ringing Through PCB Layout Techniques (SLPA005).

9.4 Q3D Tape and Reel Information

NOTES: 1. 10-sprocket hole-pitch cumulative tolerance ± 0.2. 2. Camber not to exceed 1 mm in 100 mm, noncumulative over 250 mm. 3. Material: black static-dissipative polystyrene. 4. All dimensions are in mm, unless otherwise specified. 5. Thickness: 0.3 ± 0.05 mm. 6. MSL1 260°C (IR and convection) PbF reflow compatible.

www.ti.com 10-Nov-2025 PACKAGING INFORMATION Orderable part number Status (1) Material type (2) Package | Pins Package qty | Carrier RoHS (3) Lead finish/ Ball material (4) MSL rating/ Peak reflow (5) Op temp (°C) Part marking (6) CSD87334Q3D Active Production VSON-CLIP (DPB) | 8 2500 | LARGE T&R ROHS Exempt NIPDAU | SN Level-1-260C-UNLIM -55 to 150 87334D CSD87334Q3D.B Active Production VSON-CLIP (DPB) | 8 2500 | LARGE T&R ROHS Exempt NIPDAU Level-1-260C-UNLIM -55 to 150 87334D CSD87334Q3DG4 Active Production VSON-CLIP (DPB) | 8 2500 | LARGE T&R ROHS Exempt NIPDAU Level-1-260C-UNLIM -55 to 150 87334D CSD87334Q3DG4.B Active Production VSON-CLIP (DPB) | 8 2500 | LARGE T&R ROHS Exempt NIPDAU Level-1-260C-UNLIM -55 to 150 87334D CSD87334Q3DT Active Production VSON-CLIP (DPB) | 8 250 | SMALL T&R ROHS Exempt NIPDAU | SN Level-1-260C-UNLIM -55 to 150 87334D CSD87334Q3DT.B Active Production VSON-CLIP (DPB) | 8 250 | SMALL T&R ROHS Exempt NIPDAU Level-1-260C-UNLIM -55 to 150 87334D (1) Status: For more details on status, see our product life cycle. (2) Material type: When designated, preproduction parts are prototypes/experimental devices, and are not yet approved or released for full production. Testing and final process, including without limitation quality assurance, reliability performance testing, and/or process qualification, may not yet be complete, and this item is subject to further changes or possible discontinuation. If available for ordering, purchases will be subject to an additional waiver at checkout, and are intended for early internal evaluation purposes only. These items are sold without warranties of any kind. (3) RoHS values: Yes, No, RoHS Exempt. See the TI RoHS Statement for additional information and value definition. (4) Lead finish/Ball material: Parts may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two lines if the finish value exceeds the maximum column width. (5) MSL rating/Peak reflow: The moisture sensitivity level ratings and peak solder (reflow) temperatures. In the event that a part has multiple moisture sensitivity ratings, only the lowest level per JEDEC standards is shown. Refer to the shipping label for the actual reflow temperature that will be used to mount the part to the printed circuit board. (6) Part marking: There may be an additional marking, which relates to the logo, the lot trace code information, or the environmental category of the part. Multiple part markings will be inside parentheses. Only one part marking contained in parentheses and separated by a "~" will appear on a part. If a line is indented then it is a continuation of the previous line and the two combined represent the entire part marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1

www.ti.com 10-Nov-2025 Addendum-Page 2

PACKAGE MATERIALS INFORMATION www.ti.com 18-Jun-2025 TAPE AND REEL INFORMATION Reel Width (W1) REEL DIMENSIONS A0B0K0WDimension designed to accommodate the component lengthDimension designed to accommodate the component thicknessOverall width of the carrier tapePitch between successive cavity centersDimension designed to accommodate the component width TAPE DIMENSIONSK0 P1B0WA0Cavity QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Pocket QuadrantsSprocket HolesQ1Q1Q2Q2Q3Q3Q4Q4User Direction of Feed P1ReelDiameter *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant CSD87334Q3D VSON- CLIP CSD87334Q3DG4 VSON- CLIP CSD87334Q3DT VSON- CLIP Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION www.ti.com 18-Jun-2025 TAPE AND REEL BOX DIMENSIONS Width (mm) W LH *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) CSD87334Q3D VSON-CLIP DPB 8 2500 346.0 346.0 33.0 CSD87334Q3DG4 VSON-CLIP DPB 8 2500 346.0 346.0 33.0 CSD87334Q3DT VSON-CLIP DPB 8 250 182.0 182.0 20.0 Pack Materials-Page 2

www.ti.com PACKAGE OUTLINE C 8X 0.40 0.28 2.7 0.1 8X 0.5 0.4 1.95 1.8 0.1 6X 0.65

1.05 MAX

0.05 0.00 0.32 0.12 B 3.4 3.2 A 3.4 3.2 (0.2) TYP4X (0.2) 2X (0.98) VSON - 1.05 mm max heightDPB0008A PLASTIC SMALL OUTLINE - NO LEAD 4218873/B 11/2024 PIN 1 INDEX AREA SEATING PLANE 0.08 C REFER TO NOTE 4 4 5

0.1 C A B

0.05 C EXPOSED THERMAL PAD SYMM SYMM NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance 4. Exposed metals on side wall may vary & not visible. SCALE 3.600

www.ti.com EXAMPLE BOARD LAYOUT

0.07 MIN

0.07 MAX

(1.8) 6X (0.65) (3.05) 2X (0.34) 2X (0.65) (2.7) (R0.05) TYP ( 0.2) VIA TYP (0.22) 4X (0.2) 2X (1.18) 6X (0.65) 6X (0.34) 4X (0.5) 2X (1.1) 2X (0.65) VSON - 1.05 mm max heightDPB0008A PLASTIC SMALL OUTLINE - NO LEAD 4218873/B 11/2024 PKG 4 5 PKG LAND PATTERN EXAMPLE SCALE:20X METAL UNDER SOLDER MASK SOLDER MASK OPENING NOTES: (continued) 5. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature number SLUA271 (www.ti.com/lit/slua271). 6. Vias are optional depending on application, refer to device data sheet. If some or all are implemented, recommended via locations are shown. SOLDER MASK OPENING SOLDER MASK METAL UNDER SOLDER MASK DEFINED PADS 1 & 2 (OPTIONAL FOR OTHERS) METALSOLDER MASK OPENING SOLDER MASK DETAILS NON SOLDER MASK DEFINED PREFERRED FOR PADS 3-9

www.ti.com EXAMPLE STENCIL DESIGN 2X (0.34) 2X (0.65) 6X (0.65) (3.05) (R0.05) TYP 6X (0.34)(0.22) 6X (0.65) 2X (1.63) (1.19) (0.695) 2X (1.18) 2X (3.34) VSON - 1.05 mm max heightDPB0008A PLASTIC SMALL OUTLINE - NO LEAD 4218873/B 11/2024 NOTES: (continued) 7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. SOLDER PASTE EXAMPLE BASED ON 0.125 mm THICK STENCIL EXPOSED PAD 9 76% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE SCALE:20X PKG 4 5 PKG METAL TYP 9METAL UNDER SOLDER MASK

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