CSD04060E ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
- PDF pages: 3
Technical content
SiliconCarbideSchottkyDiode www.iscsemi.com
FEATURES
- High-Frequency Operation
- ExtremelyFastSwitching
APPLICATIONS
- SwitchModePower Supplies
- PowerFactor Correction
- MotorDrives ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRSM RepetitivePeakReverseVoltage SurgePeakReverseVoltage 600 V IF(AVG) AverageForwardCurrent Tc=150°C 4 A Tc=125°C 7 IFSM Non-RepetitiveForwardSurgeCurrent Tc=25°C,tP=1.5ms,HalfSineWave 38 A Tc=25°C,tP=10µs,Pulse 110 IFRM RepetitivePeakForwardSurge Current Tc=25°C,Tp=10ms,HalfSinePulse 17.5 A Tc=125°C,Tp=10ms,HalfSinePulse 12.5 Ptot PowerDissipation Tc=25°C 62.5 W Tc=125°C 20.8 W TJ JunctionTemperature -55~175 ℃ Tstg StorageTemperatureRange -55~175 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 2.4 ℃/W 1 3
SiliconCarbideSchottkyDiode www.iscsemi.com ELECTRICALCHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VF DiodeForwardVoltage V IR Reversecurrent uA QC TotalCapacitiveCharge VR=800V,IF=4A,di/dt =500A/μs,TJ=25°C -- 10 -- nC C TotalCapacitance，f=1MHZ VR=0V,TJ =25°C,f=1 MHz -- 223 -- pFVR=200V,TJ =25°C,f =1MHz -- 28 -- VR=400V,TJ =25°C,f= 1MHz -- 22 -- PACKAGEOUTLINE(UNIT:mm):
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