CR5AS-12 RENESAS

Document overview

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Technical content

Features

  • IT (AV) : 5 A
  • VDRM : 600 V
  • IGT : 100 µA
  • Non-Insulated Type
  • Glass Passivation Type Outline 2, 4 PRSS0004ZA-A (Package name: MP-3A) 1. Cathode 2. Anode 3. Gate 4. Anode 1 32

Applications

Switching mode power supply, regulator for autocycle, protective circuit for TV sets, VCRs, and printers, igniter for autocycle, electric tool, strobe flasher, and other general purpose control applications Maximum Ratings Voltage class Parameter Symbol 12 Unit Repetitive peak reverse voltage V RRM 600 V Non-repetitive peak reverse voltage V RSM 720 V DC reverse voltage V R (DC) 480 V Repetitive peak off-state voltageNote1 V DRM 600 V DC off-state voltageNote1 V D (DC) 480 V

Rev.2.00, Mar.01.200 5, page 2 of 7 Parameter Symbol Ratings Unit Conditions RMS on-state current I T (RMS) 7.8 A Average on-state current I T (AV) 5 A Commercial frequency, sine half wave 180° conduction, Tc = 88°C Surge on-state current I TSM 90 A 60Hz sine half wave 1 full cycle, peak value, non-repetitive I2t for fusing I 2t 33 A 2s Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Peak gate power dissipation P GM 0.5 W Average gate power dissipation P G (AV) 0.1 W Peak gate forward voltage V FGM 6 V Peak gate reverse voltage V RGM 6 V Peak gate forward current I FGM 0.3 A Junction temperature Tj – 40 to +125 °C Storage temperature Tstg – 40 to +125 °C Mass — 0.26 g Typical value Notes: 1. With gate to cathode resistance R GK = 220 Ω .

Electrical Characteristics

Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak reverse current I RRM — — 2.0 mA Tj = 125°C, VRRM applied, RGK = 220 Ω Repetitive peak off-state current I DRM — — 2.0 mA Tj = 125°C, VDRM applied, RGK = 220 Ω On-state voltage V TM — — 1.8 V Tc = 25°C, ITM = 15 A, instantaneous value Gate trigger voltage V GT — — 0.8 V Tj = 25°C, V D = 6 V, IT = 0.1 A Gate non-trigger voltage V GD 0.1 — — V Tj = 125°C, VD = 1/2 VDRM, RGK = 220 Ω Gate trigger current I GT 1 — 100 Note3 µA Tj = 25°C, V D = 6 V, IT = 0.1 A Holding current I H — 3.5 — mA Tj = 25°C, VD = 12 V, RGK = 220 Ω Thermal resistance R th (j-c) — — 3.0 °C/W Junction to case Note2 Notes: 2. The measurement point fo r case temperature is at anode tab. 3. If special value of I GT is required, IGT from 20 to 100 µA is possible. (IGT item: E)

Rev.2.00, Mar.01.200 5, page 3 of 7 Performance Curves Maximum On-State Characteristics On-State Current (A) On-State Voltage (V) Rated Surge On-State Current Surge On-State Current (A) Conduction Time (Cycles at 60Hz) 100 25 731 0 1 10242 5 7 34 100 102 101 100 10–1 Gate Voltage (V) Gate Current (mA) Gate Trigger Current vs. Junction Temperature Junction Temperature (°C) Gate Characteristics × 100 (%)Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) 120 14060–20–40–60 0 20 40 80 100 103 102 101 100 # 1 # 2 Typical Example # 1 11 µA # 2 61 µA IGT(25°C) RL = 60Ω VD = 6V Maximum Transient Thermal Impedance Characteristics (Junction to case, Junction to ambient) Transient Thermal Impedance (°C/W) Time (s) Gate Trigger Voltage vs. Junction Temperature Gate Trigger Voltage (V) Junction Temperature (°C) 1.0 0.8 0.7 0.6 0.3 0.4 0.1 120 140–40–60 –20 20 80 0.2 0.5 0.9 06 0 40 100 Tj = 25°C 23100 571 0 1 23 57 1 0 2 23 57 1 0 3 101 2310–3 57 1 0–2 23 57 1 0 –1 23 57 1 0 0 103 102 100 Junction to ambient Junction to case Distribution Typical Example Tc = 25°C 23 57 23 57 10210110010-123 5710-2 23 57 23 102 101 100 VFGM = 6V VGT = 0.8V IGT = 100µA (Tj = 25°C) PGM = 0.5W PG(AV) = 0.1W VGD = 0.1V IFGM = 0.3A

Rev.2.00, Mar.01.200 5, page 4 of 7 Maximum Average Power Dissipation (Single-Phase Half Wave) Average Power Dissipation (W) Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) Case Temperature (°C) Average On-State Current (A) 0 8 0 246 7135 θ = 30° 60° 120°90° 180° 160 120 140 100 0 8 0 246 7135 θ = 30° 60° 120° 90° 180° θ 360° Resistive, inductive loads θ 360° Resistive, inductive loads Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Ambient Temperature (°C) Ambient Temperature (°C) Average On-State Current (A) 160 120 140 100 θ = 30° 60° 120° 90° 180° 160 120 140 100 0 80 246 7135 θ = 30° 60° 120° 90° 180° θ 360° Resistive, inductive loads Natural convection θ 360° Resistive, inductive loads Natural convection Aluminum Board 80×80×t2.3 Case Temperature (°C) Maximum Average Power Dissipation (Single-Phase Full Wave) Average Power Dissipation (W) Average On-State Current (A) Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) 0 80 246 7135 θ = 30° 60° 120°90° 180° 160 120 140 100 0 80 246 7135 θ = 30° 60° 90° 120° 180° θ θ 360° Resistive loads θ θ 360° Resistive loads

Rev.2.00, Mar.01.200 5, page 5 of 7 Average On-State Current (A) Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) Ambient Temperature (°C) Ambient Temperature (°C) 160 120 140 100 θ = 30° 60° 120° 90° 180° 160 120 140 100 0 80 246 7135 θ = 30° 60° 120° 180° 90° θ θ 360° Resistive loads Natural convection θ θ 360° Resistive loads Natural convection Aluminum Board 80×80×t2.3 Breakover Voltage vs. Gate to Cathode Resistance Gate to Cathode Resistance (kΩ) × 100 (%) Breakover Voltage (RGK = rkΩ) Breakover Voltage (RGK = 220Ω) Breakover Voltage vs. Junction Temperature Junction Temperature (°C) × 100 (%) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C)–40–20 0 20 40 60 80 100120140160 160 100 120 140 23 5 7 1 0 -1-2 23 57 1 0 0 23 5 7 1 0 1 102 101 103 100

7 Tj = 125°CTypical ExampleRGK = 220ΩTypical Example

Holding Current vs. Junction Temperature Holding Current (mA) Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage Rate of Rise of Off-State Voltage (V/µs) × 100 (%) Breakover Voltage (dv/dt = vV/µs) Breakover Voltage (dv/dt = 1V/µs) 23100 571 0 1 23 57 1 0 2 23 57 1 0 3 160 120 140 100 60–20–40–60 0 20 40 80 100120 140 10–1 100 102 101 Tj = 125°C RGK = 220Ω Typical Example VD = 12V RGK = 220Ω Distribution Typical Example

Rev.2.00, Mar.01.200 5, page 6 of 7 Holding Current vs. Gate to Cathode Resistance Gate to Cathode Resistance (kΩ) × 100 (%)Holding Current (RGK = rkΩ) Holding Current (RGK = 1kΩ) 23 5 7 1 0 -110-2 23 5 7 1 0 0 23 5 7 1 0 1 400 100 150 200 250 300 350 # 1 # 2 Tj = 25°CTypical Example IGT(25°C) IH(220Ω) 14µA 48µA 1.7mA 2.7mA # 1 # 2 Junction Temperature (°C) × 100 (%) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) Repetitive Peak Reverse Voltage vs. Junction Temperature – 4 0 – 2 00 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 160 100 120 140 Typical Example Gate Trigger Current vs. Gate Current Pulse Width × 100 (%)Gate Trigger Current (tw) Gate Trigger Current (DC) Gate Current Pulse Width (µs) 102 23100 54 471 0 1 23 57 1 0 2 104 103 101 VD = 6V RL = 60Ω Ta = 25°C Typical Example IGT(DC) 11µA 61µA # 1 # 2 # 2 # 1

Rev.2.00, Mar.01.200 5, page 7 of 7 Package Dimensions SC-63 0.32g MASS[Typ.] MP-3APRSS0004ZA-A RENESAS CodeJEITA Package Code Package Name Unit: mm 10.4Max 1Max 0.5 ± 0.2 0.1 ± 0.1 0.5 ± 0.2 0.760.76 ± 0.2 2.3 ± 0.2 5.3 ± 0.2 6.6 1.4 ± 0.2 6.1 ± 0.2 1 ± 0.2 2.3 2.5Min 2.3 Order Code Lead form Standard packing Quantity Standard order code Standard order code example Surface-mounted type Taping 3000 Type name – T +Direction (1 or 2) +3 CR5AS-12-T13 Surface-mounted type Tube 75 Type name CR5AS-12 Note : Please confirm the specificat ion about the shipping in detail.

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