CNY17

CNY17_05 VISHAY

Document overview

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Technical content

Document Number: 83606 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 09-Nov-05 1 Optocoupler, Phototransistor Output, with Base Connection CNY17 Vishay Semiconductors

DESCRIPTION

The CNY17 is an optically coup led pair consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon NPN phototransitor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The CNY17 can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modulation.

FEATURES

• Isolation test voltage 5300 VRMS  Long term stability  Industry standard dual-in-line package  Lead (Pb)-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC AGENCY APPROVALS  Underwriters lab file no. E52744 system code H or J  DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending  BSI IEC 60950 IEC 60065 F I M K O Note For additional information on the available options refer to option information. i179004 B C E A C NC ORDER INFORMATION PART REMARKS CNY17-1 CTR 40 to 80 %, DIP-6 CNY17-2 CTR 63 to 125 %, DIP-6 CNY17-3 CTR 100 to 200 %, DIP-6 CNY17-4 CTR 160 to 320 %, DIP-6 CNY17-1X006 CTR 40 to 80 %, DIP-6 400 mil (option 6) CNY17-1X007 CTR 40 to 80 %, SMD-6 (option 7) CNY17-1X009 CTR 40 to 80 %, SMD-6 (option 9) CNY17-2X006 CTR 63 to 125 %, DIP-6 400 mil (option 6) CNY17-2X007 CTR 63 to 125 %, SMD-6 (option 7) CNY17-2X009 CTR 63 to 125 %, SMD-6 (option 9) CNY17-3X006 CTR 100 to 200 %, DIP-6 400 mil (option 6) CNY17-3X007 CTR 100 to 200 %, SMD-6 (option 7) CNY17-3X009 CTR 100 to 200 %, SMD-6 (option 9) CNY17-4X006 CTR 160 to 320 %, DIP-6 400 mil (option 6) CNY17-4X007 CTR 160 to 320 %, SMD-6 (option 7) CNY17-4X009 CTR 160 to 320 %, SMD-6 (option 9) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6.0 V Forward current IF 60 mA Surge current t ≤ 10 µs I FSM 2.5 A Power dissipation Pdiss 100 mW

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83606 2 Rev. 1.5, 09-Nov-05 CNY17 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical val ues are characteristic s of the device and are the result of en gineering evaluations. Typical values are for information only and are not part of the testing requirements. OUTPUT Collector emitter breakdown voltage BV CEO 70 V Emitter base breakdown voltage BV EBO 7.0 V Collector current IC 50 mA t < 1.0 ms I C 100 mA Power dissipation Pdiss 150 mW COUPLER Isolation test voltage between emitter and detector referred to climate DIN 50014, part 2, Nov. 74 t = 1.0 s V ISO 5300 V RMS Creepage distance ≥ 7.0 mm Clearance distance ≥ 7.0 mm Isolation thickness between emitter and detector ≥ 0.4 mm Comparative tracking index per DIN IEC 112/VDE 0303, part 1 175 Isolation resistance VIO = 500 V, Tamb = 25 °C R IO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C R IO ≥ 1011 Ω Storage temperature Tstg - 55 to + 150 °C Operating temperature T amb - 55 to + 100 °C Soldering temperature max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Tsld 260 °C ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I F = 60 mA V F 1.25 1.65 V Breakdown voltage I R = 10 mA V BR 6.0 V Reverse current V R = 6.0 V I R 0.01 10 µA Capacitance V R = 0 V, f = 1.0 MHz C O 25 pF Thermal resistance R th 750 K/W OUTPUT Collector emitter capacitance V CE = 5.0 V, f = 1.0 MHz C CE 5.2 pF Collector base capacitance V CB = 5.0 V, f = 1.0 MHz C CB 6.5 pF Emitter base capacitance V EB = 5.0 V, f = 1.0 MHz C EB 7.5 pF Thermal resistance R th 500 K/W COUPLER Collector emitter, saturation voltage V F = 10 mA, IC = 2.5 mA V CEsat 0.25 0.4 V Coupling capacitance C C 0.6 pF Collector emitter, leakage current V CE = 10 V CNY17-1 I CEO 2.0 50 nA CNY17-2 I CEO 2.0 50 nA CNY17-3 I CEO 5.0 100 nA CNY17-4 I CEO 5.0 100 nA

Document Number: 83606 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 09-Nov-05 3 CNY17 Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors Note Current transfer ratio and collector-emitter leakage current by dash number (Tamb °C). CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT IC/IF VCE = 5.0 V, IF = 10 mA CNY17-1 CTR 40 80 % CNY17-2 CTR 63 125 % CNY17-3 CTR 100 200 % CNY17-4 CTR 160 320 % V CE = 5.0 V, IF = 1 mA CNY17-1 CTR 13 30 % CNY17-2 CTR 22 45 % CNY17-3 CTR 34 70 % CNY17-4 CTR 56 90 % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT LINEAR OPERATION (WITHOUT SATURATION) Turn-on time I F = 10 mA, VCC = 5.0 V, RL = 75 Ω ton 3.0 µs Rise time I F = 10 mA, VCC = 5.0 V, RL = 75 Ω tr 2.0 µs Turn-off time I F = 10 mA, VCC = 5.0 V, RL = 75 Ω toff 2.3 µs Fall time I F = 10 mA, VCC = 5.0 V, RL = 75 Ω tf 2.0 µs Cut-off frequency I F = 10 mA, VCC = 5.0 V, RL = 75 Ω fCO 250 kHz SWITCHING OPERATION (WITH SATURATION) Turn-on time IF = 20 mA CNY17-1 t on 3.0 µs IF = 10 mA CNY17-2 t on 4.2 µs CNY17-3 t on 4.2 µs IF = 5 mA CNY17-4 t on 6.0 µs Rise time IF = 20 mA CNY17-1 t r 2.0 µs IF = 10 mA CNY17-2 t r 3.0 µs CNY17-3 t r 3.0 µs IF = 5 mA CNY17-4 t r 4.6 µs Turn-off time IF = 20 mA CNY17-1 t off 18 µs IF = 10 mA CNY17-2 t off 23 µs CNY17-3 t off 23 µs IF = 5 mA CNY17-4 t off 25 µs Fall time IF = 20 mA CNY17-1 t f 11 µs IF = 10 mA CNY17-2 t f 14 µs CNY17-3 t f 14 µs IF = 5 mA CNY17-4 t f 15 µs

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83606 4 Rev. 1.5, 09-Nov-05 CNY17 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 1 - Linear Operation (without Saturation) Fig. 2 - Switching Operation (with Saturation) Fig. 3 - Current Transfer Ratio vs. Diode Current Fig. 4 - Current Transfer Ratio vs. Diode Current Fig. 5 - Current Transfer Ratio vs. Diode Current Fig. 6 - Current Transfer Ratio vs. Diode Current icny17_01 RL = 75 Ω VCC = 5 V IC 47 Ω IF IF 1 kΩ VCC = 5 V 47 Ω icny17_02 (%) 1000 100 0.1 10 1 IF (mA)icny17_03 (TA = - 25 °C, VCE = 5 V) IC/IF = f (IF) IC IF icny17_04 (%) 1000 100 0.1 10 1 IF (mA) (TA = 0 °C, VCE = 5 V) IC/IF = f (IF) IC IF icny17_05 (%) 1000 100 0.1 10 1 IF (mA) (TA = 25 °C, VCE = 5 V) IC/IF = f (IF) IC IF icny17_06 (%) 1000 100 0.1 10 1 IF (mA) (TA = 50 °C, VCE = 5 V) IC/IF = f (IF) IC IF

Document Number: 83606 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 09-Nov-05 5 CNY17 Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors Fig. 7 - Current Transfer Ratio vs. Diode Current Fig. 8 - Current Transfer Ratio (CTR) vs. Temperature Fig. 9 - Transistor Characteristics Fig. 10 - Output Characteristics Fig. 11 - Forward Voltage Fig. 12 - Collector Emitter Off-state Current icny17_07 (%) 1000 100 0.1 10 1 IF (mA) (TA = 75 °C, VCE = 5 V) IC/IF = f (IF) IC IF - 25 75 2505 0 TA (°C)icny17_08 (%) 1000 100 (IF = 10 mA, VCE = 5 V) IC/IF = f (T) IC IF 01 5 105 IC (mA) VCE (V)icny17_09 IB = 10 µA IB = 15 µA IB = 20 µA IB = 40 µA IB = 2 µA IB = 5 µA IC = f (VCE) IF = 0 01 5 105 IC VCE (V)icny17_10 IF = 14 mA IF = 12 mA IF = 10 mA IF = 7 mA IF = 5 mA IF = 2 mA IF = 1 mA IC = f (VCE) 1.2 1.1 1.0 0.9 0.1 10 100 1 VF (V) IF (mA) icny17_11 VF = f (IF) 25 °C 50 °C 75 °C 0.1 0.01 0.001 0° C 25 50 75 100 ICEO (µA) TA icny17_12 VCE = 12 V VCE = 35 V ICEO = f (V,T) (IF = 0)

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83606 6 Rev. 1.5, 09-Nov-05 CNY17 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection Fig. 13 - Saturation Voltage vs. Collector Current and Modulation Depth CNY17-1 Fig. 14 - Saturation Voltage vs. Collector Current and Modulation Depth CNY17-2 Fig. 15 - Saturation Voltage vs. Collector Current and Modulation Depth CNY17-3 Fig. 16 - Saturation Voltage vs. Collector Current and Modulation Depth CNY17-4 Fig. 17 - Permissible Power Dissipation for Transistor and Diode 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 10 100 VCE sat IC (mA)icny17_13 IF = 3 x IC VCEsat = f (IC) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 10 100 VCE sat (V) IC (mA)icny17_14 IF = 2 x IC IF = 3 x IC VCEsat = f (IC) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 10 100 VCE sat (V) IC (mA)icny17_15 IF = 2 x IC IF = 3 x IC IF = IC VCEsat = f (IC) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 10 100 VCE sat (V) IC (mA)icny17_16 IF = 2 x IC IF = 3 x IC IF = IC VCEsat = f (IC) 100 150 200 0 50 100 7525 Ptot (mW) TA (°C)icny17_18 Ptot = f (TA) Transistor Diode

Document Number: 83606 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 09-Nov-05 7 CNY17 Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors PACKAGE DIMENSIONS in inches (millimeters) i178004 0.010 (0.25) typ. 0.114 (2.90) 0.130 (3.0) 0.130 (3.30) 0.150 (3.81) 0.031 (0.80) min. 0.300 (7.62) typ. 0.031 (0.80) 0.035 (0.90) 0.100 (2.54) typ. 0.039 (1.00) min. 0.018 (0.45) 0.022 (0.55) 0.048 0.022 (0.55) 0.248 (6.30) 0.256 (6.50) 0.335 (8.50) 0.343 (8.70) Pin one ID 654 123 18° 3°to 9° 0.300 to 0.347 (7.62 to 8.81) typ. ISO Method A (0.45) min. 0.315 (8.00) 0.020 (0.51) 0.040 (1.02) 0.300 (7.62) ref. 0.375 (9.53) 0.395 (10.03) 0.012 (0.30) typ. 0.0040 (0.102) 0.0098 (0.249) 15° max. Option 9 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) 0.307 (7.8) 0.291 (7.4) 0.407 (10.36) 0.391 (9.96) Option 6 0.315 (8.0) min. 0.300 (7.62) typ. 0.180 (4.6) 0.160 (4.1) 0.331 (8.4) min. 0.406 (10.3) max. 0.028 (0.7) min. Option 7 18450

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83606 8 Rev. 1.5, 09-Nov-05 CNY17 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of ou r products, processes, distri bution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosp here which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number: 91000 www.vishay.com Revision: 08-Apr-05 1 Notice Specifications of the products displayed herein are subjec t to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.