CMT01N60 ETC1

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Technical content

POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION

FEATURES

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature PIN CONFIGURATION SYMBOL TO-251 Front View GATE DRAIN SOURCE TO-252 Front View GATE DRAIN SOURCE TO-92 Front View SOURCE GATE DRAIN D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain to Current － Continuous － Pulsed ID IDM 1.0 9.0 A Gate-to-Source Voltage － Continue － Non-repetitive VGS VGSM ±30 ±40 V V Total Power Dissipation TO-251/252 PD W Operating and Storage Temperature Range TJ, TSTG -55 to 150 Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ (VDD = 100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25Ω) EAS mJ Thermal Resistance － Junction to Case － Junction to Ambient θJC θJA 1.0 62.5 ℃/W Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 260 2005/12/05 Rev. 1.5 Champion Microelectronic Corporation Page 1

POWER FIELD EFFECT TRANSISTOR 2005/12/05 Rev. 1.5 Champion Microelectronic Corporation Page 2

ORDERING INFORMATION

CMT01N60GN251* TO-251 CMT01N60GN252* TO-252 CMT01N60GN92* TO-92 *Note: G : Suffix for Pb Free Product

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, TJ = 25℃. CMT01N60 Characteristic Symbol Min Typ Max Units Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 μA) V(BR)DSS 600 V Drain-Source Leakage Current (VDS = 600 V, VGS = 0 V) (VDS = 480 V, VGS = 0 V, TJ = 125℃) IDSS 0.1 0.3 mA Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 μA) VGS(th) 2.0 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 0.6A) * RDS(on) 8.0 Ω Forward Transconductance (VDS ≧ 50 V, ID = 0.5A) * gFS 0.5 mhos Input Capacitance Ciss 210 pF Output Capacitance Coss pF Reverse Transfer Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Crss 4.2 pF Turn-On Delay Time td(on) ns Rise Time tr ns Turn-Off Delay Time td(off) ns Fall Time (VDD = 300 V, ID = 1.0 A, VGS = 10 V, RG = 18Ω) * tf ns Total Gate Charge Qg 8.5 nC Gate-Source Charge Qgs 1.8 nC Gate-Drain Charge (VDS = 400 V, ID = 1.0 A, VGS = 10 V)* Qgd nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) VSD 1.5 V Forward Turn-On Time ton ns Reverse Recovery Time (IS = 1.0 A, VGS = 0 V, dIS/dt = 100A/μs) trr 350 500 ns * Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance

POWER FIELD EFFECT TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS 2005/12/05 Rev. 1.5 Champion Microelectronic Corporation Page 3

POWER FIELD EFFECT TRANSISTOR 2005/12/05 Rev. 1.5 Champion Microelectronic Corporation Page 4

POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-251 2005/12/05 Rev. 1.5 Champion Microelectronic Corporation Page 5

POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-252 2005/12/05 Rev. 1.5 Champion Microelectronic Corporation Page 6

POWER FIELD EFFECT TRANSISTOR 2005/12/05 Rev. 1.5 Champion Microelectronic Corporation Page 7

POWER FIELD EFFECT TRANSISTOR 2005/12/05 Rev. 1.5 Champion Microelectronic Corporation Page 8 IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F-1, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan T EL: +886-3-567 9979 T EL: +886-2-8692 1591 FAX: +886-3-567 9909 FAX: +886-2-8692 1596