CF001 ETC1

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Technical content

  • . pete se : ie a) ae CF001 Series GaAs cd a Pseudomorphi =| » HEMT and = a Super Low Noise: 0.8 dB at 12 GHz A ae

2 High Gain: Usable to 44 GHz eS

aP Power: Up to +19 dBm Cae 1dB p Ake : ax Active Layers Include: es Pseudomor phic HEMT, Epitaxial a \\ and Ion Implanted a A Wafer Qualification Procedure a : I Customer Wafer Selection Available Ae Ci Celeritek CF001 Series Chips = Celeritek CFOO1 Series chips are GaAs-based A transistors which include the CFO01-01. CFO01-02 and CF001-03 models. They are 300 um gate width, sub-half- be micron gate length GaAs devices with Celeritek’s proprietary Pe Silicon Nitride passivation. be Celeritek"s Wafer Qualification Procedure for CFOO! A i Series FETs consists of DC. RF and reliability testing of both en he individual die and generic 6 to 18 GHz amplifier modules. Sat Ss ay The CFOO1-01 provides high gain up to 26 GHz. Itis pi 4 suitable for general purpose and driver amplifier applications — a with up to +19 dBm power from a single FET. These devices Z a can also be used in oscillator applications. es ie The CFO01-03 model is Celeritek’s state-of-the-art J ae... low noise and high associated gain GaAs Pseudomorphic eae : i ea HEMT device. It is suitable for narrow and wide band low aw a rs are : ] noise and high gain amplifiers up to 40 GHz. Its rugged ae aoe “4 construction allows it to withstand the same input power as. awit ae st Sid conventional MESFETs ee : os All CFOOI Series devices are available in chip form a oe and are suitable for airborne. shipboard and ground-based Baye 5 ae equipment. Screening includes MIL-STD-750 Class B. Class S Sr ae and commercial screening. These devices are also available in tae eee packaged form. Please consult the CFBOO1 Series and CFAOO01 i aad Series data sheets or contact the factory for further information . : ‘ —_~S am eae eee 2 eee : Ee [153] 5 :

Specifications (T 4 = 25°C) CF001-01 CFO001-02 CFO001-03 lon Pseudomorphic Active Layer Implanted HEMT Frequency Symbol | Parameters and Conditions (GHz) Min’ Typ Max Min’ Typ Max Min Typ Max NFopt Optimum Noise Figure 12.0 dB 16 24 12 18 08 1.2 Vps = 3.0 V, Ing = 15 mA Ga Gain at NFopt 12.0 dB 75° 85 85 9.5 95 10.5 Vpg = 3.0 Ping = 15 mA Vps =6.0V, Ipg=40mA | 10.0 aB 95 10.5 115 18.0 dB 6.0 7.0 8.0 Pigp | Power Output @ 1 dB GC 17.0 17.0 Vps = 6.0 V, Ipg = 40 mA 9m Transconductance mS 60 75 90 Vps = 3.0 V, Vag = 0V Ipgsg | Drain Current mA 40 60 120 30 660 «6120 30 60 120 Vps = 3.0 V, Veg = OV Vp Pinchoff Voltage Volts | -0.7 -13 -25 05 -13 -25 05 -13 -25 Vps = 3.0 V, Ipg = 1 mA l@p = 100 pA Absolute Maximum Ratings Chip Outline Drawing Parameter Symbol Ratings — 400/15. —————+| Drain-Source Voltage Vos 8v ' b—-|s020 na Gate-Source Voltage Ves 5V i 1 . ] | Drain Current Ips lpss 50/2.0 D 'e o} | Se J el | Continuous Dissipation Py 800 mW i 250/9.8 Channel Temperature Tou 175°C 502.0 | Bie (6 S s Storage Temperature Tstg “65°C to +175°C Tp jf : Typical Noise Parameters - CF001-03 _Vps=30¥. ips=15™4_ CFO01 CHIP (UNITS IN MICRONS/MILS) Frequency NFopt Ga Gamma opt Rn/50 ‘THICKNESS: 110 MICRONS/4.3 MILS (GHz) (a8) (@B) (Mag) (Ang) 68 eas 182 0.78 42 0.48 Die Attach: Conductive epoxy or eutectic die attach is 188 os} 192 052 197 nae Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (pre- * ‘ » ye stressed); Thermocompression bonding is preferred over 380 134 33 0.48 1 6.08 thermosonic bonding. For thermocompression bonding: 22.0 140 82 053 -179 0.05 Stage Temperature: 250°C; Bond Tip Temperature: 150°C; 24.0 154 76 058 -165 0.05 Bonding Tip Pressure: 18 to 40 gms depending on size of Wawasan 6 Es [154 ]

Typical Performance (T 4 = 25°C) CF001-03 CF001-03 NOISE FIGURE AND ASSOCIATED GAIN vs FREQUENCY NOISE FIGURE AND ASSOCIATED GAIN vs Ipg oo Vps = 3 V, Ip = 15 mA _ Vps = 3 V, FREQUENCY = 12 GHZ “eg ee = Sis ~ i ‘7 158 a? >. ap 2 POON feet a | ° aa eee ee ae °% 4 6 8 10 20-26 °s 10 15 20 25 30 35 40 a5 60 55 60 FREQUENCY, GHz Ips, mA CF001-03 CF001-01 So1 AND MSG vs FREQUENCY at LOW NOISE BIAS ‘Soy AND MSG vs FREQUENCY at POWER BIAS 0 ee J 0 Vps = 6 V, Ing = 40 mA FE a a 20 ee Sis > gt | | —— a 210 a —_|> 2 1 ee o | T/T] J a __| [1] TS 2 4 6 8 10 20 «26 2 4 6 8 10 20 (26 FREQUENCY, GHz FREQUENCY, GHz CF001-03 CF001-01 S11 AND Syo vs FREQUENCY at LOW NOISE BIAS S11 AND S29 vs FREQUENCY at POWER BIAS Vps = 3 V, Ipg = 15 mA Vps = 6 V, Ipg = 40 mA j50 j50 LN IKEA HERS LEGS, iw, \\WYXhor A . -j25 me “100 -j25 Po “j100 -{50 -{50 FREQUENCY 2.0 to 26.0 GHz FREQUENCY 2.0 to 26.0 GHz CU OE EP DITEW | i Ye ei [155]

Typical Scattering Parameters, Common Source (S-Parameters Include Bonding Wire Parasitics) CFO001-01 at Power Bias Vps = 6 V, Ipg = 40 mA Frequency Si Sai S12 S22 K MSG (GHz) (Mag) (Ang) (dB) __ (Mag) (Ang) (dB) (Mag) _(Ang) (Mag) (Ang) (dB) CF001-03 at Low Noise Bias Vps =3V, Ipg = 15 mA Frequency S11 Say Si2 S22 K MSG (GHz) (Mag) (Ang) (8) (Mag) _ (Ang) (dB) (Mag) (Ang) (Mag) (Ang) (a) Device Model Wafer Qualification Procedure R, c, R, ea ate VOS=6V, VOS=3V, 100% DC Test Parameters 1DS=40mA_I0S=15mA__Units Cys Cas Ly 0.19 0.26 nH G és oe on be R ™ @) R NF, Power, Rois) o1e ‘ t as Performan ewe ist Cgg 0.028 0.028 pF G 66 66 mS ‘Sample Gireuit Cys 0.12 010 pF 6-18 Giz Module Ras 161 71 2 Rg 13 13 Q Ls Power Blast & lg 0.21 0.23 nH Assesment Burn-in Rs 1 1.6 Q i 0.04 006 =n | © © 80% of tested samples must meet specifications for water acceptance

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Santa Clara, California 95054 (408) 986-5060 Fax: (408) 986-5095 3-91 Specifications subject to change. a el [156]