CEFB101-G COMCHIP

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Technical content

Note1: Thermal resistance from junction to lead mounted on PCB with 8.0mmx8.0mm 2 copper pad areas. Page1 Parameter Symbol CEFB101-G CEFB102-G CEFB103-G CEFB104-G CEFB105-G Unit Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Max. Average Forward Current Reverse recovery time Max. Thermal Resistance (Note1) Max. Operating Junction Temperature Storage Temperature Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 oC Ta=100 oC Max. Instantaneous Forward Voltage at 1.0A Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) VRRM VDC VRMS IFSM Io VF Trr IR R JL Tj TSTG 35 70 100 100 200 200 140 280 400 400 600 600 420 1.0 150 -55 to +150 5.0 200 0.875 1.1 35 50 1.25 V V V A A V nS uA oC/W oC oC Case: JEDEC DO-214AA molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Approx. Weight: 0.063 gram Mechanical Data: Maximum Ratings and Electrical Characterics: Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0. Super fast recovery time for high efficient Built-in strain relief Low forward voltage drop Features: Reverse Voltage: 50 ~ 600 Volts Forward Current: 1.0 Amp CEFB101-G Thru CEFB105-G (RoHS Device) SMD Efficient Fast Recovery Rectifier “-G” suffix designates RoHS compliant Version SMB / DO-214AA Dimensions in inches and (millimeter) 0.083(2.11) 0.075(1.91) 0.155(3.94) 0.130(3.30) 0.185(4.70) 0.160(4.06) 0.012(0.31) 0.006(0.15) 0.008(0.20) 0.203(0.10) 0.220(5.59) 0.200(5.08) 0.050(1.27) 0.030(0.76) 0.096(2.44) 0.083(2.13)

“-G” suffix designates RoHS compliant Version SMD Efficient Fast Recovery Rectifier Rating and Characteristic Curves (CEFB101-G Thru CEFB105-G) Fig.1- Reverse Characteristics Percent of Rated Peak Reverse Voltage (%) Reverse Current (uA) 0 15 30 45 60 75 90 105 120 135 150 100 1.0 0.1 0.01 Forward Voltage (V) Forward Current (A) Fig.2 - Forward Characteristics CEFB101-G ~ 103-G CEFB104-G CEFB105-G Pulse width 300uS 4% duty cycle 1.0 0.1 0.01 0.001 Fig. 3 - Junction Capacitance Fig.4 - Non Repetitive Forward Surge Curre Number of Cycles at 60Hz Peak Surge Forward Current (A) Fig.5 - Test Circuit Diagram and Reverse Recovery Time Characteristics NOTES: 1. Rise Times = 7ns max., Input Impedance = 1 megohm.22pF. 2. Rise Time = 10ns max., Source Impedance = 50 ohms. Fig. 6 - Current Derating Curve Ambient Temperature SET TIME BASE FOR 50 / 10ns / cm Single Phase Half Wave 60Hz 0 25 50 75 100 125 150 175 trr 1cm OSCILLISCOPE D.U.T. NONINDUCTIVENONINDUCTIVE Junction Capacitance (pF) 0.01 0.1 1.0 10 100 CEFB104-G ~ 105-G CEFB104-G ~ 105-G f=1MHz and applied 4VDC reverse voltage